HiPerFETTM
Power MOSFETs
IXFK 180N07
IXFX 180N07
VDSS = 70 V
ID25
RDS(on)
= 180 A
6 mΩ
=
Single MOSFET Die
trr ≤ 250 ns
Preliminary Data Sheet
PLUS247TM
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
70
70
V
V
D (TAB)
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
D
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
180
76
720
180
A
A
A
A
TO-264AA(IXFK)
IAR
TC = 25°C
G
D
(TAB)
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
S
G = Gate
D = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
S = Source
TAB = Drain
PD
TJ
TC = 25°C
560
W
Features
z International standard packages
z Low RDS (on) HDMOSTM process
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Md
Mounting torque
TO-264
0.9/6
Nm/lb.in.
Weight
PLUS 247
TO-264
6
g
g
10
Applications
z
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
z
z
Symbol
TestConditions
Characteristic Values
z
(TJ = 25°C, unless otherwise specified)
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
min. typ. max.
z
VDSS
VGS = 0 V, ID = 3mA
70
V
z
z
VGS(th)
VDS = VGS, ID = 8mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
±100 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 µA
2 mA
z
PLUS 247TM package for clip or spring
mounting
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 2
6 mΩ
z
High power density
DS98556C(01/03)
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