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IXFX180N15P

型号:

IXFX180N15P

描述:

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

178 K

PolarTM HiPerFET  
Power MOSFET  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
VDSS = 150 V  
ID25 = 180 A  
IXFK 180N15P  
IXFX 180N15P  
RDS(on) 11 m Ω  
trr  
200 ns  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
150  
150  
V
V
VDS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-264 (IXFK)  
ID25  
TC =25° C  
180  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
380  
IAR  
TC =25° C  
60  
A
G
D
S
TAB  
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
4
mJ  
J
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
10  
V/ns  
PLUS247 (IXFX)  
TC =25° C  
830  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
TAB  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
Md  
Fc  
Mounting torque  
Mounting Force  
(IXFK)  
(IXFX)  
1.13/10 Nm/lb.in.  
20..120/4.5..25  
N/lb  
Weight  
TO-264 (IXFK)  
PLUS247 (IXFX)  
10  
6
g
g
Features  
Symbol  
Test Conditions  
Characteristic Values  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
150  
V
V
l
2.5  
5.0  
200  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 150° C  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
11 mΩ  
l
High power density  
DS99218E(01/06)  
© 2006 IXYS All rights reserved  
IXFK 180N15P  
IXFX 180N15P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
PLUS 247TM Outline  
(TJ = 25° C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
55  
86  
S
Ciss  
Coss  
Crss  
7000  
2250  
515  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
32  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
RG = 3.3 (External)  
150  
36  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
240  
55  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
140  
RthJC  
RthCS  
0.18° C/W  
° C/W  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
3.81  
4.32  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
VGS = 0 V  
Repetitive  
180  
A
A
V
TO-264 AA Outline  
ISM  
380  
1.3  
VSD  
IF = 90A, VGS = 0 V,  
Note 1  
trr  
QRM  
IF = 25 A, -di/dt = 100 A/µs  
VR = 100 V, VGS = 0 V  
150  
0.6  
200 ns  
µC  
Note 1: Pulse test, t 300 µs, duty cycle d2 %  
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFK 180N15P  
IXFX 180N15P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
º
C
180  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGS = 10V  
V
GS  
= 10V  
9V  
9V  
8V  
8V  
7V  
60  
7V  
6V  
40  
40  
20  
6
0
0
0
0
0
0.4  
0.8  
1.2  
1.6  
2
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
C
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
9V  
VGS = 10V  
8
ID = 180A  
1.8  
1.6  
1.4  
1.2  
1
7V  
ID = 90A  
60  
6V  
5V  
40  
20  
0.8  
0.6  
0
0.5  
1
1.5 2  
VD S - Volts  
2.5  
3
3.5  
4
-50 -25  
0
25  
50  
TJ - Degrees Centigrade  
75 100 125 150 175  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
º
TJ = 175 C  
VGS = 10V  
V
GS  
= 15V  
º
TJ = 25 C  
0.7  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75 100 125 150 175  
50  
100  
150 200  
I D - Amperes  
250  
300  
350  
© 2006 IXYS All rights reserved  
IXFK 180N15P  
IXFX 180N15P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
250  
225  
200  
175  
150  
125  
100  
75  
120  
100  
80  
60  
40  
20  
0
º
TJ = -40 C  
25ºC  
150ºC  
º
TJ = 150 C  
25ºC  
-40ºC  
50  
25  
0
4
4.5  
5
5.5  
6
6.5  
VG S - Volts  
7
7.5  
8
8.5  
9
0
0
1
25 50 75 100 125 150 175 200 225 250  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 75V  
ID = 90A  
IG = 10mA  
º
TJ = 150 C  
º
TJ = 25 C  
0
0.3  
0.5  
0.7  
0.9  
VS D - Volts  
1.1  
1.3  
1.5  
25 50 75 100 125 150 175 200 225 250  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
f = 1MHz  
RDS(on) Limit  
25µs  
C
C
is  
100µs  
os  
1ms  
C
rs  
10ms  
º
TJ = 175 C  
DC  
º
C = 25 C  
T
10  
100  
1000  
0
5
10  
15 20  
VDS - Volts  
25  
30  
35  
40  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFK 180N15P  
IXFX 180N15P  
Fig . 13 . M a xim u m T r a n s ie n t T h e r m a l Re s is ta n c e  
1 . 0 0  
0 . 1 0  
0 . 0 1  
0 . 0 0  
0 . 1  
1
1 0  
1 0 0  
1 0 0 0  
Puls e W id th - millis ec o n ds  
© 2006 IXYS All rights reserved  
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