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IXFX250N10P

型号：

IXFX250N10P

描述：

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

134 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 250A  
RDS(on) ≤ 6.5mΩ  
IXFK250N10P  
IXFX250N10P  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
Tab  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
250  
160  
700  
A
A
A
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
125  
3
A
J
G
D
S
Tab  
EAS  
PD  
TC = 25°C  
1250  
20  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
dv/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Dynamic dv/dt Rating  
z Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Fast Intrinsic Diode  
z Low QG and RDS(on)  
20..120 /4.5..27  
z Low Package Inductance  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
Easy to Mount  
Space Savings  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
100  
V
V
3.0  
5.0  
Applications  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
IDSS  
z Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 150°C  
1
mA  
z Uninterrupted Power Supplies  
z AC Motor Drives  
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
6.5 mΩ  
z High Speed Power Switching  
Applications  
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100021A(6/10)  
IXFK250N10P  
IXFX250N10P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
50  
83  
S
Ciss  
Coss  
Crss  
16  
4470  
290  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
25  
30  
50  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Millimeter  
Inches  
Min. Max.  
Dim.  
Min.  
Max.  
Qg(on)  
Qgs  
205  
77  
nC  
nC  
nC  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Qgd  
80  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
0.15  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
250  
750  
1.3  
PLUS247TM Outline  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
200  
ns  
μC  
A
IF = 125A, -di/dt = 100A/μs  
QRM  
IRM  
0.7  
VR = 50V, VGS = 0V  
10.4  
Terminals: 1 - Gate  
2 - Drain  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFK250N10P  
IXFX250N10P  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
250  
225  
200  
175  
150  
125  
100  
75  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
8V  
7V  
6V  
7V  
50  
25  
6V  
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
VDS - Volts  
1
1.1 1.2 1.3 1.4  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 125A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
250  
225  
200  
175  
150  
125  
100  
75  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
10V  
9V  
VGS = 10V  
8V  
I D = 250A  
I D = 125A  
7V  
6V  
50  
5V  
25  
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
VDS - Volts  
2
2.2 2.4 2.6 2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 125A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
180  
160  
140  
120  
100  
80  
TJ = 175ºC  
External Lead Current Limit  
VGS = 10V  
15V - - - -  
60  
TJ = 25ºC  
40  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
ID - Amperes  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFK250N10P  
IXFX250N10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 50V  
I D = 125A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
= 1 MHz  
f
RDS(on) Limit  
C
C
isss  
25µs  
100µs  
External Lead Limit  
1ms  
oss  
10ms  
C
rss  
TJ = 175ºC  
100ms  
DC  
TC = 25ºC  
Single Pulse  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK250N10P  
IXFX250N10P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXF_250N10P (93)8-04-08  
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