HiPerFETTM Power MOSFET
IXFX 32N50 VDSS = 500 V
ID25
=
32 A
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
RDS(on) = 0.15 W
trr £ 250 ns
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
PLUS 247
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
32
120
32
A
A
A
G = Gate
D = Drain
S = Source
EAS
EAR
TC = 25°C
TC = 25°C
1.5
45
J
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
300
6
°C
Weight
g
• Fast intrinsic rectifier
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
min. typ.
max.
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
VGS= 0 V, ID = 1 mA
500
V
VDSS temperature coefficient
0.102
%/K
• DC choppers
• AC motor control
VGS(th) VDS= VGS, ID = 4 mA
VGS(th) temperature coefficient
VGS= ±20 VDC, VDS = 0
2
4
V
-0.206
%/K
IGSS
IDSS
±100 nA
Advantages
VDS= 0.8 • VDSS
VGS= 0 V
TJ = 25°C
TJ = 125°C
200 mA
1 mA
• Easy assembly
• Space savings
• High power density
RDS(on) VGS = 10 V, ID = 15A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.15
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98719A(7/00)
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