找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFX32N80P

型号:

IXFX32N80P

描述:

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

161 K

PolarHVTM HiPerFET  
Power MOSFET  
IXFK 32N80P  
IXFX 32N80P  
VDSS  
ID25  
= 800 V  
= 32 A  
RDS(on) 270 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
250 ns  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXFK)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
ID25  
IDM  
TC =25° C  
32  
70  
A
A
TC = 25° C, pulse width limited by TJM  
(TAB)  
IAR  
TC =25° C  
16  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
50  
mJ  
J
PLUS247 (IXFX)  
2.0  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
TC =25° C  
830  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
(TAB)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G = Gate  
S = Source Tab = Drain  
D
= Drain  
Md  
Mounting torque (TO-264)  
1.13/10 Nm/lb.in.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Features  
l
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
l
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
800  
V
V
l
3.0  
5.0  
200  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
TJ = 125° C  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
270 mΩ  
l
High power density  
DS99425E(01/06)  
© 2006 IXYS All rights reserved  
IXFK 32N80P  
IXFX 32N80P  
PLUS 247TM Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
23  
38  
S
Ciss  
Coss  
Crss  
8800  
700  
26  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
24  
85  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RG = 2 (External)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
150  
40  
nC  
nC  
nC  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
44  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCS  
0.15 ° C/W  
° C/W  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
32  
70  
A
TO-264 Outline  
ISM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t 300 µs, duty cycle d2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
250  
ns  
µC  
A
QRM  
IRM  
VR = 100V, VGS = 0 V  
0.8  
6.0  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFK 32N80P  
IXFX 32N80P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
V
GS  
= 10V  
7V  
V
10V  
7V  
GS =  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1.0  
0.7  
0.4  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 32A  
D
I
= 16A  
D
5V  
18  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
3
6
9
12  
15  
21  
24  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
º
T = 125 C  
J
º
T = 25 C  
J
0
10  
20  
30  
40  
50  
60  
70  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFK 32N80P  
IXFX 32N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
T = 125  
J
º
C
C
C
25  
º
º
-40  
T = -40 C  
º
J
º
25 C  
125  
º
C
0
3
3.5  
4
4.5  
5
0
5
10  
15  
20 25  
30  
35  
40  
45  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 16A  
D
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
VS D - Volts  
1
1.1 1.2  
0
20  
40  
60  
80  
100 120 140 160  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
C
iss  
oss  
C
rs  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

ILSI

IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.182424s