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IXFX44N80P

型号:

IXFX44N80P

描述:

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

95 K

PolarHVTM HiPerFET  
Power MOSFET  
IXFK 44N80P  
IXFX 44N80P  
VDSS = 800  
ID25 = 44  
V
A
RDS(on) 190 mΩ  
trr  
250 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXFK)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
800  
800  
V
V
VGS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
44  
100  
A
A
(TAB)  
IAR  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
TC = 25°C  
22  
80  
3.4  
A
mJ  
J
PLUS247 (IXFX)  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 10 Ω  
,
10  
V/ns  
TC = 25°C  
1040  
W
(TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
Md  
FC  
Mounting torque  
Mounting force  
(IXFK)  
(IXFX)  
1.13.10 Nm/lb.in.  
Features  
z Fast intrinsic diode  
20..120 /4.5..25  
N/lb  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Weight  
(IXFK)  
(IXFX)  
10  
5
g
g
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 800 μA  
VDS = VGS, ID = 8 mA  
VGS = ± 30 VDC, VDS = 0  
800  
V
V
Easy to mount  
Space savings  
z
3.0  
5.0  
z
High power density  
± ±200  
50  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
μA  
TJ = 125°C  
1.5 mA  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
190 mΩ  
DS99478E(01/06)  
© 2006 IXYS All rights reserved  
IXFK 44N80P  
IXFX 44N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
27  
43  
S
Ciss  
Coss  
Crss  
12  
910  
30  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
28  
22  
75  
27  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 1 Ω (External)  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
1.12  
2.39  
2.90  
5.13  
2.89  
2.10  
1.42  
2.69  
3.09  
.190  
.100  
.079  
.044  
.094  
.114  
.202  
.114  
.083  
.056  
.106  
.122  
Qg(on)  
Qgs  
198  
67  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
65  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
25.91 26.16  
19.81 19.96  
5.46 BSC  
RthJC  
RthCS  
0.12°C/W  
°C/W  
.215 BSC  
0.15  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
Source-Drain Diode  
Characteristic Values  
P
3.17  
3.66  
.125  
.144  
TJ = 25°C unless otherwise specified)  
Q
Q1  
R
R1  
6.07  
8.38  
3.81  
1.78  
6.27  
8.69  
4.32  
2.29  
.239  
.330  
.150  
.070  
.247  
.342  
.170  
.090  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
44  
A
A
V
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
ISM  
Repetitive  
100  
1.5  
PLUS 247TM (IXFX) Outline  
VSD  
IF = IS, VGS = 0 V, Note 1  
trr  
IF = 22 A, -di/dt = 100 A/μs  
250 ns  
QRM  
IRM  
VR = 100 V, VGS = 0 V  
0.8  
8.0  
μC  
A
Note 1: Pulse test, t 300 μs, duty cycle d ±≤ 2 %  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6771478 B2  
IXFK 44N80P  
IXFX 44N80P  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25 C  
°
@ 25 C  
°
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
7V  
V
GS  
= 10V  
7V  
GS  
6V  
6V  
5V  
5V  
0
0
3
6
9
12 15 18 21 24 27 30  
0
0
0
1
2
3
4
5
6
7
8
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
@ 125 C  
°
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 44A  
D
I
= 22A  
D
5V  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
2
4
6
8
10  
12  
14  
16  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
2.4  
2.2  
2
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125 C  
°
J
1.8  
1.6  
1.4  
1.2  
1
T = 25 C  
°
J
0.8  
0
10 20 30 40 50 60 70 80 90 100  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFK 44N80P  
IXFX 44N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = - 40 C  
°
25 C  
J
°
125 C  
°
T = 125 C  
°
J
25 C  
°
- 40 C  
°
0
10  
20  
30  
40  
50  
60  
70  
80  
3.5  
4
4.5  
5
5.5  
6
6.5  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
140  
120  
100  
80  
V
= 400V  
DS  
I
I
= 22A  
D
G
= 10mA  
60  
40  
T = 125 C  
°
J
20  
T = 25 C  
°
J
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2 1.3  
0
25  
50  
75  
100 125 150 175 200  
VS D - Volts  
Q G - NanoCoulombs  
Fig. 13. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
100000  
10000  
1000  
100  
1.00  
0.10  
0.01  
0.00  
f = 1MHz  
C
C
iss  
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
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