HiPerFETTM
Power MOSFETs
VDSS = 550 V
IXFK 48N55
IXFX 48N55
ID25 = 48 A
RDS(on)= 110mW
Single MOSFET Die
Avalanche Rated
trr £ 250 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
PLUS 247TM (IXFK)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
550
550
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
G
D
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
48
192
44
A
A
A
TO-264 AA (IXFK)
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
(TAB)
G
D
S
PD
TJ
TC = 25°C
560
W
-55 ... +150
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TJM
Tstg
150
-55 ... +150
°C
°C
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Features
• Internationalstandardpackages
Md
Mountingtorque
TO-264
0.9/6 Nm/lb.in.
• Low RDS (on) HDMOSTM process
Weight
PLUS 247
TO-264
6
g
g
• Ruggedpolysilicongatecellstructure
• UnclampedInductiveSwitching(UIS)
rated
10
• Lowpackageinductance
- easy to drive and to protect
• Fastintrinsicrectifier
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
550
2.5
V
VGS(th)
IGSS
VDS = VGS, ID = 8mA
4.5 V
• ACmotorcontrol
• Temperatureandlightingcontrols
VGS = ±20 V, VDS = 0
±200nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
• PLUS 247TM package for clip or spring
mounting
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
110 mW
• Space savings
• Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98712(3/24/00)
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