IXFK 24N120Q2
IXFX 24N120Q2
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 20 V; ID = 0.5 • ID25, pulse test
15
25
S
Ciss
Coss
Crss
8200
560
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
110
td(on)
tr
td(off)
tf
22
13
60
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1-Gate
RG = 1.0 Ω (External),
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Qg(on)
Qgs
180
45
nC
nC
nC
Min. Max.
Min. Max.
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
A12
Qgd
80
b
1.14
1.91
2.92
1.40
2.13
3.12
b
RthJC
RthCK
0.15 K/W
K/W
b12
TO-264
0.15
C
D
E
0.61
0.80
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
L
19.81 20.32
L1
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
TO-264 AA Outline
VGS = 0 V
24
A
A
ISM
Repetitive; pulse width limited by TJM
96
VSD
IF = IS, VGS = 0 V,
1.5
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
300
ns
µC
A
QRM
IRM
1
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
10
Millimeter
Dim.
Inches
Min. Max.
Min.
Max.
A
4.82
2.54
2.00
5.13
2.89
2.10
.190
.202
.114
.083
A1
.100
A2
.079
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
E
e
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
5.46BSC
.215BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,850,072
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4,931,844
4,881,106
5,034,796
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ofthefollowingU.S.patents:
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