HiPerFETTM
Power MOSFETs
Q-Class
VDSS = 500 V
ID(cont) = 32 A
RDS(on) = 0.15 W
IXFJ 32N50Q
trr
< 250 ns
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr, HDMOSTM Family
Preliminary data sheet
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
G
TJ = 25°C to 150°C; RGS = 1 MW
D
é
(TAB)
S
VGS
Continuous
Transient
±20
±30
V
V
VGSM
G = Gate,
S = Source,
D = Drain,
TAB = Drain
ID25
IDM
IAR
TC = 25°C
32
128
32
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAs
TC = 25°C
TC = 25°C
1.5
45
5
J
mJ
EAR
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
PD
TC = 25°C
360
W
TJ
-55 ... +150
150
°C
°C
°C
• Low R
low Qg process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
-55 ... +150
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
500
2
V
V
VGS(th)
VDS = VGS, ID = 4 mA
4
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
100 mA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
1
mA
• High power, low profile package
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.15
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98579B(5/31/00)
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