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8PT06F-T

型号：

8PT06F-T

描述：

敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]

品牌：

NELLSEMI[ NELL SEMICONDUCTOR CO., LTD ]

页数：

7 页

PDF大小：

1083 K

下载PDF手册

RoHS

8PT Series

SEMICONDUCTOR

Sensitive and Standard SCRs, 8A

Main Features

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT

600 to 1000

0.2 to 15

TO-251 (I-PAK)

TO-252 (D-PAK)

(8PTxxF)

(8PTxxG)

DESCRIPTION

Available either in sensitive or standard gate

triggering levels, the 8A SCR series is suitable

to fit all modes of control found in applications

such as overvoltage crowbar protection, motor

control circuits in power tools and kitchen aids,

inrush current limiting circuits, capacitive

discharge ignition and voltage regulation circuits.

TO-220AB (Non-lnsulated)

TO-220AB (lnsulated)

(8PTxxAI)

(8PTxxA)

(A2)

Available in through-hole or surface-mount

packages, they provide an optimized performance

in a limited space.

(G)3

1(A1)

ABSOLUTE MAXIMUM RATINGS

TEST CONDITIONS

VALUE

UNIT

PARAMETER

SYMBOL

Tc=110°C

Tc=100°C

Tc=110°C

Tc=100°C

t = 20 ms

TO-251/TO-252/TO-220AB

RMS on-state current full sine wave

(180° conduction angle )

I_T(RMS)

TO-220AB insulated

TO-251/TO-252/TO-220AB

Average on-state current

(180° conduction angle)

I_T(AV)

5.1

TO-220AB insulated

F =50 Hz

100

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

t = 16.7 ms

F =60 Hz

I²t Value for fusing

A²s

A/µs

I²t

t_p= 10 ms

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

dI/dt

I_GM

F = 60 Hz

T_j= 125ºC

Peak gate current

T_p= 20 µs

P_G(AV)

T_stg

Average gate power dissipation

Storage temperature range

T_j=125ºC

- 40 to + 150

ºC

T_j

Operating junction temperature range

- 40 to + 125

www.nellsemi.com

Page 1 of 7

RoHS

8PT Series

SEMICONDUCTOR

STANDARD ELECTRICAL SPECIFICATIONS

(T_J= 25 ºC, unless otherwise specified)

8PTxxxx

SYMBOL

Unit

TEST CONDITIONS

Min.

Max.

0.5

I_GT

V_D= 12 V, R_L= 30Ω

V_GT

1.3

0.2

V_GD

I_H

V_D= V_DRM, R_L= 3.3KΩ

I_T= 100 mA, gate open

I_G= 1.2 I_GT

T_j= 125°C

Min.

Max.

I_L

dV/dt

V_TM

V_D= 67% V_DRMgate open

T_j= 125°C

T_j= 25°C

Min.

Max.

150

V/µs

1.6

I_TM= 16A, t_P= 380 µs

V_to

R_d

0.85

Threshold voltage

Dynamic resistance

T_j= 125°C

T_j= 25°C

T_j= 125°C

mΩ

µA

Max.

I_DRM

I_RRM

V_DRM= V_RRM

SENSITIVE ELECTRICAL CHARACTERISTICS

_j= 25 ºC, unless otherwise specified)

SYMBOL

Unit

TEST CONDITIONS

8PTxxxx-S

I_GT

Max.

Min.

200

0.8

µA

V_D= 12 V, R_L= 140Ω

V_GT

V_GD

V_D= V_DRM, R_L= 3.3KΩ, R_GK=220Ω

I_RG= 10 µA

T_j= 125°C

0.1

V_RG

I_H

Min.

I_T= 50 mA_,R_GK= 1 KΩ

I_G= 1 mA_,R_GK= 1 KΩ

Max.

I_L

Max.

Min.

Max.

T_j= 125°C

T_j= 25°C

dV/dt

V_TM

V_D= 67% V_DRMR_GK= 220Ω

V/µs

I_TM= 16A, t_P= 380 µs

1.6

T_j= 125°C

Max.

Threshold voltage

Dynamic resistance

V_to

R_d

0.85

mΩ

µA

T_j= 125°C

T_j= 25°C

T_j= 125°C

I_DRM

I_RRM

Max.

V_DRM= V_RRM,R_GK= 220Ω

THERMAL RESISTANCE

SYMBOL

Parameter

VALUE

UNIT

1.3

IPAK/DPAK/TO-220AB

R_th(j-c)

°C/W

Junction to case (DC)

4.6

TO-220AB insulated

S = 0.5 cm²

D-PAK

R_th(j-a)

Junction to ambient (DC)

°C/W

100

I-PAK

TO-220AB, TO-220AB insulated

S=Copper surface under tab

www.nellsemi.com

Page 2 of 7

RoHS

8PT Series

SEMICONDUCTOR

PRODUCT SELECTOR

VOLTAGE (xx)

PART NUMBER

PACKAGE

SENSITIVITY

600 V

800 V

1000 V

200 µA

8PTxxA-S/8PTxxAl-S

TO-220AB

0.5~5 mA

2~15 mA

8PTxxA-T/8PTxxAl-T

8PTxxA/8PTxxAl

TO-220AB

I-PAK

8PTxxF-S

8PTxxF-T

200 µA

0.5~5 mA

2~15 mA

200 µA

I-PAK

8PTxxF

8PTxxG-S

8PTxxG-T

D-PAK

0.5~5 mA

2~15 mA

8PTxxG

ORDERING INFORMATION

WEIGHT

2.0g

PACKAGE

DELIVERY MODE

ORDERING TYPE

8PTxxA-y

MARKING

8PTxxA-y

BASE Q TY

TO-220AB

Tube

8PTxxAI-y

TO-220AB (insulated)

2.3g

8PTxxF-y

8PTxxG-y

8PTxxF-y

8PTxxG-y

0.40g

0.38g

TO-251(I-PAK)

TO-252(D-PAK)

Tube

Note: xx = voltage, y = sensitivity

ORDERING INFORMATION SCHEME

8 PT 06

Current

8 = 8A, I_T(RMS)

SCR series

Voltage Code

06 = 600V

08 = 800V

10 = 1000V

Package type

A = TO-220AB (non-insulated)

AI = TO-220AB ( insulated)

F = TO-251 (IPAK)

G = TO-252 (DPAK)

I_GTSensitivity

S = 70~200 µA

T = 0.5~5 mA

Blank = 2~15 mA

www.nellsemi.com

Page 3 of 7

RoHS

8PT Series

SEMICONDUCTOR

Fig.1 Maximum average power dissipation versus

average on-state current

Fig.2 Average and DC on-state current versus

case temperature

I_T(AV)(A)

P(W)

DPAK IPAK

α=180°

TO-220AB

α=180°

TO-220AB

Insulated

360°

(°C)

case

I_T(AV)(A)

100

125

Fig.4 Relative variation of thermal impedance

junction to case versus pulse duration

Fig.3 Average and DC on-state current versus

ambient temperature

I_T(AV)(A)

K=[Zth(j-c)/Rth(j-c)]

2.5

2.0

1.0

Recommended pad layout

Fr4 printed circuit board

α=180°

0.5

TO-220AB

Insulated

1.5

1.0

0.2

0.1

DPAK

IPAK

0.5

0.0

(s)

(°C)

amb

100

125

1E+3

1E+2

1E+1

1E+0

Fig.5 Relative variation of thermal impedance

junction to ambient versus pulse duration

Fig.6 Relative variation of gate trigger current

and holding current versus junction

temperature for I_GT=200µA

K=[Zth(j-a)/Rth(j-a)]

I_GT,I_H,I_L[Tj] / I_GT,I_H,I_L[Tj=25°C]

1.00

2.0

Recommended pad layout,

FR printed circuit board

1.8

1.6

I_GT

1.4

1.2

DPAK

& IL

=1KΩ

1.0

0.8

0.6

0.4

0.2

0.0

0.10

TO-220AB

Insulated

T (°C)

(s)

0.01

1E-2

-40 -20

80 100 120 140

1E-1

1E+0

1E+1

1E+2 5E+2

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Page 4 of 7

RoHS

8PT Series

SEMICONDUCTOR

Fig.8 Relative variation of holding current

versus gate-cathode resistance

(typical values)

Fig.7 Relative variation of gate trigger and

holding current versus junction

temperature

IH[RGK] / IH[RGK=1KΩ]

I_GT,I_H,I_L[Tj] / I_GT,I_H,I_L[Tj=25°C]

6.0

2.4

2.2

Tj=25 C

I_GT=200µA

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

5mA & 15mA

I_GT

2.0

1.8

1.6

1.4

1.2

& IL

1.0

0.8

0.6

0.4

0.2

0.0

T (°C)

0.5

0.0

(KΩ)

-40 -20

80 100 120 140

1E-1

1E+0

1E+1

1E-2

Fig.9 Relative variation of dV/dt immunity

versus gate-cathode resistance

(typical values) for I_G=200µA

Fig.10 Relative variation of dV/dt immunity

versus gate-cathode capacitance

(typical values) for I_GT=200µA

dV/dt[C_GK] / dV/dt[R_GK=220Ω]

dV/dt[R_GK] / dV/dt[R_GK=220Ω]

10.00

15.0

V_D=0.67 X V_DRM

Tj=125 C

R_GK=220Ω

Tj=125°C

V_D=0.67 X V_DRM

12.5

10.0

7.5

1.00

5.0

0.10

0.01

2.5

0.0

C_GK(nF)

20 40 60 80 100 120 140 160 180 200 220

(KΩ)

200 400 600 800 1000 1200 1400 1600 1800 2000

Fig.11 Surge peak on-state current versus

number of cycles

Fig.12 Non-repetitive surge peak on-state current

and corresponding values of l²t

I_STM(A)

I_TSM(A),I²t(A²s)

100

1000

Tj inital=25 C

t_p=10ms

I_TSM

One cycle

Non repetitive

dI/dt Iimitation

initial=25°C

width tp< 10ms

Sinusoidal pulse with

100

Repetitive

Tc=110°C

I²t

(ms)

Number of cycles

100

1000

0.01

0.10

1.00

10.00

www.nellsemi.com

Page 5 of 7

RoHS

8PT Series

SEMICONDUCTOR

Fig.14 Thermal resistance junction to ambient

versus copper surface under tab (DPAK)

Fig.13 On-state characteristics (maximum

values)

I_TM(A)

Rth(j-a)(°C/W)

100

50.0

Tjmax

Vt0=0.85V

Rd=46mΩ

Epoxy printed circuit board FR4

copper thickness = 35µm

10.0

1.0

Tj=max

Tj=25°C

VTM(V)

S(cm²)

0.1

10 12 14 16 18 20

0.0

0.5

1.0

1.5

2.5

3.0

3.5

4.0

2.0

Case Style

TO-220AB

10.54 (0.415) MAX.

4.70 (0.185)

9.40 (0.370)

9.14 (0.360)

3.91 (0.154)

3.74 (0.148)

4.44 (0.1754)

1.39 (0.055)

1.14 (0.045)

2.87 (0.113)

2.62 (0.103)

3.68 (0.145)

3.43 (0.135)

15.32 (0.603)

14.55 (0.573)

16.13 (0.635)

15.87 (0.625)

8.89 (0.350)

8.38 (0.330)

4.06 (0.160)

3.56 (0.140)

29.16 (1.148)

28.40 (1.118)

2.79 (0.110)

2.54 (0.100)

1.45 (0.057)

1.14 (0.045)

14.22 (0.560)

13.46 (0.530)

2.67 (0.105)

2.41 (0.095)

0.90 (0.035)

0.70 (0.028)

5.20 (0.205)

4.95 (0.195)

2.65 (0.104)

2.45 (0.096)

0.56 (0.022)

0.36 (0.014)

TO-251

(I-PAK)

6.6(0.26)

6.4(0.52)

2.4(0.095)

2.2(0.086)

1.5(0.059)

0.62(0.024)

0.48(0.019)

5.4(0.212)

5.2(0.204)

1.37(0.054)

6.2(0.244)

6(0.236)

16.3(0.641)

15.9(0.626)

1.9(0.075)

1.8(0.071)

9.4(0.37)

9(0.354)

0.85(0.033)

0.65(0.026)

0.55(0.021)

0.76(0.03)

4.6(0.181)

4.4(0.173)

0.62(0.024)

0.45(0.017)

(A2)

(G)3

1(A1)

www.nellsemi.com

Page 6 of 7

RoHS

8PT Series

SEMICONDUCTOR

Case Style

TO-252

(D-PAK)

2.4(0.095)

2.2(0.086)

6.6(0.259)

6.4(0.251)

1.5(0.059)

5.4(0.212)

5.2(0.204)

0.62(0.024)

0.48(0.019)

1.37(0.054)

6.2(0.244)

6(0.236)

9.35(0.368)

10.1(0.397)

0.89(0.035)

0.64(0.025)

0.62(0.024)

0.45(0.017)

1.14(0.045)

0.76(0.030)

2.28(0.090)

(A2)

4.57(0.180)

(G)3

1(A1)

RoHS

www.nellsemi.com

Page 7 of 7

厂商	型号	描述	页数
NELLSEMI	8PT06A-S	敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]	7 页
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NELLSEMI	8PT06AI-S	敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]	7 页
NELLSEMI	8PT06AI-T	敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]	7 页
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NELLSEMI	8PT08A-S	敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]	7 页
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