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4PT08AI-S

型号：

4PT08AI-S

描述：

敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ]

品牌：

NELLSEMI[ NELL SEMICONDUCTOR CO., LTD ]

页数：

6 页

PDF大小：

199 K

下载PDF手册
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
Sensitive gate SCRs, 4A  
Main Features  
2
2
Symbol  
Value  
4
Unit  
IT(RMS)  
A
2
1
1
3
2
VDRM/VRRM  
IGT  
V
600 to 800  
10 to 200  
3
TO-251 (I-PAK)  
TO-252 (D-PAK)  
µA  
(4PTxxF)  
(4PTxxG)  
2
DESCRIPTION  
Thanks to highly sensitive triggering levels, the 4PT  
series is suitable for all applications where the available  
gate current is limited, such as motor control for hand  
tools, kitchen aids, capacitive discharge ignitions,  
overvoltage crowbar protection for low power supplies  
among others.  
1
2
3
1
2
3
TO-220AB (Non-lnsulated)  
TO-220AB (lnsulated)  
(4PTxxAI)  
(4PTxxA)  
2
(A2)  
Available in through-hole or surface-mount packages,  
they provide an optimized performance in a limited  
space area.  
(G)3  
1(A1)  
ABSOLUTE MAXIMUM RATINGS  
TEST CONDITIONS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
Tc=115°C  
Tc=110°C  
Tc=115°C  
Tc=110°C  
t = 20 ms  
TO-251/TO-252/TO-220AB  
RMS on-state current full sine wave  
(180° conduction angle )  
IT(RMS)  
4
A
TO-220AB insulated  
TO-251/TO-252/TO-220AB  
Average on-state current  
(180° conduction angle)  
IT(AV)  
2.5  
A
TO-220AB insulated  
F =50 Hz  
30  
33  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
t = 16.7 ms  
F =60 Hz  
I2t Value for fusing  
I2t  
A2s  
A/µs  
tp = 10 ms  
4.5  
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
F = 60 Hz  
dI/dt  
Tj = 125ºC  
Tj = 125ºC  
50  
IGM  
PG(AV)  
VDRM  
VRRM  
Tstg  
Peak gate current  
Tp = 20 µs  
Tj =125ºC  
1.2  
0.2  
A
Average gate power dissipation  
Repetitive peak off-state voltage  
W
600 and 800  
V
Tj =125ºC  
Repetitive peak reverse voltage  
Storage temperature range  
- 40 to + 150  
- 40 to + 125  
ºC  
Tj  
Operating junction temperature range  
www.nellsemi.com  
Page 1 of 6  
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
ELECTRICAL SPECIFICATIONS  
(TJ = 25 ºC unless otherwise specified)  
4PTxxxx  
SYMBOL  
Unit  
TEST CONDITIONS  
10  
200  
0.8  
Min.  
Max.  
Max.  
IGT  
µA  
V
VD = 12V, RL = 30Ω  
VGT  
VD = VDRM, RL = 3.3KΩ  
RGK = 220Ω, Tj = 125°C  
VGD  
Min.  
0.1  
V
IH  
IL  
IT = 50mA, RGK = 1KΩ  
IG = 1mA, RGK = 1KΩ  
Max.  
Min.  
Min.  
5
6
mA  
mA  
V/µs  
VD = 67% VDRM RGK = 1KΩ, Tj = 125°C  
,
dV/dt  
VTM  
10  
1.6  
5
Tj = 25°C  
Tj = 25°C  
Tj = 125°C  
IT = 8A, tP = 380 µs  
Max.  
Max.  
Max.  
V
µA  
mA  
IDRM  
IRRM  
VD=VDRM, VR=VRRM  
RGK = 220Ω  
0.5  
THERMAL RESISTANCE  
SYMBOL  
Parameter  
VALUE  
UNIT  
Rth(j-c)  
Junction to case (DC)  
Junction to ambient  
2.8  
°C/W  
IPAK/DPAK/TO-220AB  
S = 0.5 cm2  
70  
60  
TO-252(D-PAK)  
TO-220AB  
Rth(j-a)  
°C/W  
TO-251(I-PAK)  
100  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
PACKAGE  
SENSITIVITY  
600 V  
800 V  
1000 V  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
70~200 µA  
4PTxxA-S/4PTxxAl-S  
TO-220AB  
TO-220AB  
TO-220AB  
10~30 µA  
20~30 µA  
4PTxxA-03/4PTxxAl-03  
4PTxxA-05/4PTxxAl-05  
4PTxxA-06/4PTxxAl-06  
4PTxxA-08/4PTxxAl-08  
30~60 µA  
50~80 µA  
TO-220AB  
TO-220AB  
V
V
V
V
V
V
V
V
4PTxxF-S  
70~200 µA  
10~30 µA  
20~30 µA  
I-PAK  
I-PAK  
I-PAK  
4PTxxF-03  
4PTxxF-05  
4PTxxF-06  
4PTxxF-08  
4PTxxG-S  
30~60 µA  
50~80 µA  
70~200 µA  
V
V
V
V
V
V
V
V
I-PAK  
I-PAK  
D-PAK  
V
V
V
V
V
D-PAK  
D-PAK  
D-PAK  
4PTxxG-03  
4PTxxG-05  
4PTxxG-06  
10~30 µA  
20~30 µA  
V
V
V
V
V
30~60 µA  
50~80 µA  
V
V
D-PAK  
4PTxxG-08  
V
www.nellsemi.com  
Page 2 of 6  
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
ORDERING INFORMATION  
,
WEIGHT  
2.0g  
PACKAGE  
DELIVERY MODE  
ORDERING TYPE  
4PTxxA-yy  
MARKING  
BASE Q TY  
4PTxxA-yy  
4PTxxAI-yy  
TO-220AB  
50  
50  
Tube  
Tube  
4PTxxAI-yy  
TO-220AB (insulated)  
2.3g  
4PTxxF-yy  
4PTxxG-yy  
4PTxxF-yy  
4PTxxG-yy  
0.40g  
0.38g  
TO-251(I-PAK)  
TO-252(D-PAK)  
80  
80  
Tube  
Tube  
Note: xx = voltage, yy = sensitivity  
ORDERING INFORMATION SCHEME  
-
S
4 PT 06  
Current  
4 = 4A, IT(RMS)  
SCR series  
Voltage Code  
06 = 600V  
08 = 800V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
F = TO-251 (I-PAK)  
G = TO-252 (D-PAK)  
IGT Sensitivity  
03 = 10~30 µA  
05 = 20~50 µA  
06 = 30~60 µA  
08 = 50~80 µA  
S = 70~200 µA  
Fig.1 Maximum average power dissipation versus  
on-state current  
Fig.2 Average and DC on-state current versus  
case temperature  
IT(AV)(A)  
P(W)  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
4.0  
3.5  
α=180°  
DC  
3.0  
2.5  
2.0  
1.5  
1.0  
TO-220AB  
Insulated  
α=180°  
TO-251/TO-252  
TO-220AB  
360°  
1.0  
0.5  
0.0  
0.5  
0.0  
α
T
(°C)  
case  
IT(AV)(A)  
1.5  
0.0  
0.5  
1.0  
2.0  
2.5  
3.0  
0
25  
50  
75  
100  
125  
www.nellsemi.com  
Page 3 of 6  
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
Fig.4 Relative variation of thermal impedance  
junction to ambient versus pulse duration  
(DPAK)  
Fig.3 Average and DC on-state current versus  
ambient temperature (DPAK)  
K=[Zth(j-c)/Rth(j-c)]  
IT(AV)(A)  
1E+0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
Device mounted on FR4 with  
recommended pad layout  
Z
th(j-c)  
DPAK (S = 0.5cm²)  
DC  
α=180°  
1E-1  
Z
th(j-a)  
IPAK  
DC  
1E-2  
1E-3  
α=180°  
Device mounted on FR4 with  
recommended pad layout  
0.2  
0.0  
t
(s)  
T
(°C)  
p
amb  
0
25  
50  
75  
100  
125  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
5E+2  
1E+2  
Fig.5 Relative variation of gate trigger current  
and holding current versus junction  
temperature  
Fig.6 Relative variation of holding current  
versus gate-cathode resistance  
(typical values)  
IH[RGK] / IH[RGK=1KΩ  
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C]  
5
2.0  
Tj=25°C  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
4
3
2
IGT  
lhand IL  
RGK=1KΩ  
0.4  
T (°C)  
j
1
0
0.2  
0.0  
RGK(KΩ)  
-40 -20  
0
20  
40  
60  
80  
100 120 140  
1E-2  
1E-1  
1E+0  
1E+1  
Fig.8 Relative variation of dV/dt immunity  
versus gate-cathode capacitance  
(typical values)  
Fig.7 Relative variation of dV/dt immunity  
versus gate-cathode resistance  
(typical values)  
dV/dt[RGK] / dV/dt[RGK=220Ω]  
dV/dt[CGK] / dV/dt[RGK=220Ω]  
10.00  
1.00  
10  
Tj=125 C  
VD=0.67 X VDRM  
VD=0.67 X VDRM  
Tj=125°C  
8
6
4
2
0
R
=220Ω  
GK  
0.10  
0.01  
C
(nF)  
R
(KΩ)  
GK  
GK  
0
200  
600 800 1000 1200 1400  
1800 2000  
6
400  
1600  
0
2
8
10 12 14 16 18  
22  
4
20  
www.nellsemi.com  
Page 4 of 6  
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
Fig.9 Surge peak on-state current versus  
number of ctcles  
Fig.10 Non-repetitive surge peak on-state  
current, and corresponding values  
of l²t  
ITSM(A),I²t(A²s)  
ITSM(A)  
300  
100  
35  
30  
Tj inital=25°C  
dI/dt Iimitation  
tp=10ms  
ITSM  
25  
20  
One cycle  
Non repetitive  
Tj inital=25°C  
15  
10  
5
10  
Repetitive  
Tc=115°C  
I²t  
Sinusoidal pulse with  
width < 10ms  
t
(ms)  
Number of cycles  
10  
100  
p
0
1
1000  
1
0.01  
0.10  
1.00  
10.00  
Fig.11 On-state characteristics (maximum  
values)  
Fig.12 Thermal resistance junction to ambient  
versus copper surface under tab (DPAK)  
Rth(j-a)(°C/W)  
ITM(A)  
100  
50.0  
10.0  
Epoxy printed circuit board FR4  
copper thickness = 35µm  
Tjmax  
Vt0=0.85V  
Rd=90mΩ  
80  
60  
40  
Tj=max  
RoHS  
1.0  
0.1  
Tj=25°C  
20  
0
S(cm²)  
10  
VTM(V)  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
2
4
6
8
12 14  
16  
18  
20  
www.nellsemi.com  
Page 5 of 6  
RoHS  
RoHS  
4PT Series  
SEMICONDUCTOR  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
16.13 (0.635)  
15.87 (0.625)  
PIN  
2
8.89 (0.350)  
8.38 (0.330)  
1
3
4.06 (0.160)  
29.16 (1.148)  
28.40 (1.118)  
3.56 (0.140)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-251  
(I-PAK)  
6.6(0.26)  
6.4(0.52)  
2.4(0.095)  
2.2(0.086)  
1.5(0.059)  
0.62(0.024)  
0.48(0.019)  
5.4(0.212)  
5.2(0.204)  
1.37(0.054)  
6.2(0.244)  
6(0.236)  
4T  
16.3(0.641)  
15.9(0.626)  
RoHS  
1.9(0.075)  
1.8(0.071)  
9.4(0.37)  
9(0.354)  
0.85(0.033)  
0.65(0.026)  
0.55(0.021)  
0.76(0.03)  
4.6(0.181)  
4.4(0.173)  
0.62(0.024)  
0.45(0.017)  
TO-252  
(D-PAK)  
2.4(0.095)  
2.2(0.086)  
6.6(0.259)  
6.4(0.251)  
1.5(0.059)  
5.4(0.212)  
5.2(0.204)  
0.62(0.024)  
0.48(0.019)  
1.37(0.054)  
2
6.2(0.244)  
6(0.236)  
9.35(0.368)  
10.1(0.397)  
1
2
3
0.89(0.035)  
0.64(0.025)  
0.62(0.024)  
0.45(0.017)  
1.14(0.045)  
0.76(0.030)  
2.28(0.090)  
2
(A2)  
4.57(0.180)  
(G)3  
1(A1)  
www.nellsemi.com  
Page 6 of 6  
厂商 型号 描述 页数 下载

NELLSEMI

 		4PT06A-03 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

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 		4PT06A-08 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

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 		4PT06A-S 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

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 		4PT06AI-03 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

NELLSEMI

 		4PT06AI-05 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

NELLSEMI

 		4PT06AI-06 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

NELLSEMI

 		4PT06AI-08 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

NELLSEMI

 		4PT06AI-S 敏感栅可控硅， 4A[ Sensitive gate SCRs, 4A ] 6 页

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