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4T06AF-D

型号：

4T06AF-D

描述：

三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ]

品牌：

NELLSEMI[ NELL SEMICONDUCTOR CO., LTD ]

页数：

7 页

PDF大小：

398 K

下载PDF手册
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
TRIACs, 4A  
Snubberless, Logic Level and Standard  
MAIN FEATURES  
2
SYMBOL  
VALUE  
UNIT  
A
2
IT(RMS)  
4
2
1
VDRM/VRRM  
IGT(Q1)  
V
600 to 1000  
5 to 50  
1
3
2
3
mA  
TO-251 (I-PAK)  
TO-252 (D-PAK)  
(4TxxF)  
(4TxxG)  
DESCRIPTION  
A2  
The 4T triac series is suitable for general purpose AC  
switching. They can be used as an ON/OFF function in  
applications such as static relays, heating regulation,  
induction motor starting circuits... or for phase control  
operation in light dimmers, motor speed controllers,...  
1
2
3
A1  
A2  
G
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
The snubberless and logic level versions are specially  
recommended for use on inductive loads, thanks to their  
high commutation performances.  
(4TxxA)  
(4TxxAI)  
By using an internal ceramic pad, the 4T series provides  
voltage insulated tab (rated at 2500VRMS) complying  
with UL standards (File ref. :E320098)  
ITO-220AB  
(4TxxAF)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUE  
UNIT  
Tc = 105ºC  
TO-251/TO-252/TO-220AB  
TO-220AB insulated  
F =50 Hz  
RMS on-state current (full sine wave)  
IT(RMS)  
4
A
Tc = 100ºC  
t = 20 ms  
35  
38  
6
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
t = 16.7 ms  
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Peak gate current  
IGM  
4
1
A
PG(AV)  
Average gate power dissipation  
Storage temperature range  
Operating junction temperature range  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
ºC  
www.nellsemi.com  
Page 1 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)  
SNUBBERLESS and Logic level (3 quadrants)  
4Txxxx  
Unit  
QUADRANT  
SYMBOL  
TEST CONDITIONS  
TW  
SW  
CW  
(1)  
IGT  
I - II - III  
I - II - III  
MAX.  
MAX.  
05  
10  
35  
mA  
V
VD = 12 V, RL = 30Ω  
VGT  
1.3  
VD = VDRM, RL = 3.3KΩ  
Tj = 125°C  
VGD  
MIN.  
MAX.  
MAX.  
MIN.  
I - II - III  
0.2  
V
(2)  
IT = 200 mA  
IH  
mA  
15  
25  
30  
35  
10  
I - III  
50  
60  
10  
15  
IG = 1.2 IGT  
IL  
mA  
II  
dV/dt(2)  
VD = 67% VDRM gate open ,Tj = 125°C  
,
V/µs  
20  
40  
400  
(dV/dt)c = 0.1 V/µs  
(dV/dt)c = 10 V/µs  
-
-
Tj = 125°C  
Tj = 125°C  
Tj = 125°C  
2.7  
2.0  
-
1.8  
0.9  
-
(dI/dt)c(2)  
MIN.  
A/ms  
Without snubber  
2.5  
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)  
Standard (4 quadrants)  
4Txxxx  
TEST CONDITIONS  
SYMBOL  
UNIT  
QUADRANT  
T
5
5
D
5
S
A
10  
10  
10  
25  
I - II - III  
(1)  
IGT  
MAX.  
mA  
10  
VD = 12 V, RL = 30Ω  
IV  
VGT  
VGD  
1.3  
0.2  
V
V
ALL  
ALL  
VD = VDRM, RL = 3.3KΩ, Tj = 125°C  
IT = 200 mA  
(2)  
5
10  
15  
5
10  
10  
20  
5
10  
15  
25  
10  
25  
25  
40  
50  
mA  
IH  
MAX.  
MAX.  
I - III - IV  
IL  
IG = 1.2 IGT  
mA  
II  
dV/dt(2)  
MIN.  
MIN.  
VD = 67% VDRM, gate open, Tj = 125°C  
V/µs  
(dV/dt)c(2)  
(dI/dt)c = 1.7 A/ms,  
Tj = 125°C  
0.5  
1
2
5
STATIC CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
UNIT  
VALUE  
1.55  
0.85  
100  
5
(2)  
ITM = 5.5 A, tP = 380 µs  
Threshold voltage  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
VTM  
VTO  
MAX.  
MAX.  
MAX.  
V
(2)  
(2)  
Dynamic resistance  
RD  
mΩ  
µA  
IDRM  
IRRM  
VD = VDRM  
VR = VRRM  
MAX.  
1
mA  
Note 1: Minimum lGT is guaranted at 5% of lGT max.  
Note 2: For both polarities of A2 referenced to A1.  
www.nellsemi.com  
Page 2 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
THERMAL RESISTANCE  
UNIT  
SYMBOL  
VALUE  
TO-220AB,TO-251, TO-252  
TO-220AB Insulated, ITO-220AB  
TO-252  
2.6  
4.0  
70  
60  
Rth(j-c)  
Junction to case (AC)  
°C/W  
S = 0.5 cm2  
Rth(j-a)  
TO-220AB Insulated, TO-220AB, ITO-220AB  
Junction to ambient  
°C/W  
TO-251  
100  
S = Copper surface under tab.  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
SENSITIVITY  
TYPE  
PACKAGE  
1000 V  
600 V  
V
800 V  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35 mA  
10 mA  
10 mA  
10 mA  
5 mA  
Snubberless  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
4TxxA-CW/4TxxAl-CW  
4TxxA-S/4TxxAl-S  
V
V
V
V
Standard  
4TxxA-A/4TxxAl-A  
Logic level  
4TxxA-SW/4TxxAl-SW  
V
V
V
Standard  
Standard  
Logic level  
4TxxA-T/4TxxAI-T  
4TxxA-D/4TxxAl-D  
V
V
V
5 mA  
V
5 mA  
TO-220AB  
4TxxA-TW/4TxxAI-TW  
4TxxF-CW  
V
I-PAK  
V
V
35 mA  
35 mA  
10 mA  
10 mA  
5 mA  
Snubberless  
D-PAK  
V
V
Snubberless  
Logic level  
Logic level  
Logic level  
Logic level  
4TxxG-CW  
4TxxF-SW  
V
V
I-PAK  
D-PAK  
V
4TxxG-SW  
4TxxF-TW  
V
V
V
I-PAK  
4TxxG-TW  
V
5 mA  
D-PAK  
V
4TxxF-T/D/S/A  
4TxxG-T/D/S/A  
4TxxAF-CW  
4TxxAF-SW  
4TxxAF-TW  
4TxxAF-D  
V
V
5 /5/10/10 mA  
5 /5/10/10 mA  
35 mA  
10 mA  
5 mA  
Standard  
Standard  
I-PAK  
V
D-PAK  
V
Snubberless  
Logic level  
Logic level  
ISOWAT TO-220AB  
ISOWAT TO-220AB  
ISOWAT TO-220AB  
ISOWAT TO-220AB  
ISOWAT TO-220AB  
V
V
V
V
V
V
V
V
5 mA  
Standard  
Standard  
4TxxAF-A  
V
10 mA  
V
ORDERING INFORMATION  
,
WEIGHT  
PACKAGE  
DELIVERY MODE  
ORDERING TYPE  
MARKING  
4TxxA-yy  
4TxxAI-yy  
BASE Q TY  
4TxxA-yy  
2.0g  
2.3g  
TO-220AB  
50  
50  
Tube  
Tube  
4TxxAI-yy  
TO-220AB (insulated)  
4TxxF-yy  
4TxxG-yy  
4TxxF-yy  
4TxxG-yy  
0.40g  
0.38g  
TO-251(I-PAK)  
TO-252(D-PAK)  
80  
80  
Tube  
Tube  
4TxxAF-yy  
4TxxAF-yy  
ISOWAT TO-220AB  
2.5g  
50  
Tube  
Note: xx = voltage, yy = sensitivity  
www.nellsemi.com  
Page 3 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
ORDERING INFORMATION SCHEME  
-
CW  
4
T 06  
A
Current  
4 = 4A  
Triac series  
Voltage  
06 = 600V  
08 = 800V  
10 = 1000V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
AF= TO-220F(ISOWAT TO-220AB, insulated)  
F = TO-251 (I-PAK)  
G = TO-252 (D-PAK)  
I
Sensitivity  
GT  
T = 5mA Standard  
D = 5mA Standard  
S = 10mA Standard  
A = 10mA Standard  
CW = 35mA Snubberless  
TW = 5mA Logic Level  
SW = 10mA Logic Level  
Fig.1 Maximum power dissipation versus RMS on-state  
current (full cycle)  
Fig.2 RMS on-state current versus case temperature  
(full cycle)  
P (W)  
I
(A)  
T(RMS)  
6
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
5
4
3
2
TO-220AB / DPAK / IPAK  
ITO-220AB  
TO-220AB (insulated)  
1.0  
0.5  
1
0
I
(A)  
T(RMS)  
TC(°C)  
0.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
25  
50  
75  
100  
125  
Fig.3 RMS on-state current versus ambient  
temperature (printed circuit board FR4,  
copper thickness: 35µm)(full cycle)  
Fig.4 Relative variation of thermal impedance  
versus pulse duration.  
K=[Z /R  
]
th th  
I
(A)  
T(RMS)  
2.0  
1.8  
1.6  
1.4  
1E+0  
1E-1  
1E-2  
R
th(j-c)  
DPAK  
(S=0.5cm2)  
ISOWATT220AB  
R
th(j-a)  
TO-220AB / DPAK / IPAK  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
TO-220AB / TO-220AB (insulated)  
DPAK / IPAK  
t (s)  
p
T (°C)  
c
0
25  
50  
75  
100  
125  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
5E+2  
www.nellsemi.com  
Page4 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
Fig.5 On-state characteristics (maximum values).  
Fig.6 Surge peak on-state current versus number  
of cycles.  
ITM (A)  
ITSM (A)  
100  
40  
T =25°C  
j
35  
30  
25  
20  
15  
10  
5
T =125°C  
j
t=20ms  
One cycle  
Non repetitive  
Tj initial=25°C  
10  
1
Repetitive  
T =100°C  
c
Tj max. :  
Vto = 0.85 V  
Rd = 100 mW  
VTM(V)  
Number of cycles  
0
0
1
2
3
4
5
6
7
8
9
10  
1
10  
100  
1000  
Fig.7 Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp < 10ms.  
and corresponding value of l2t.  
Fig.8 Relative variation of gate trigger current,holding  
current and latching current versus junction  
temperature (typical values).  
lTSM (A), l2t(A2s)  
l
,l ,l [T ] / l ,l ,l [T =25°C]  
H L j GT H L j  
GT  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1000  
100  
Tj initial=25°C  
IGT  
dI/dt limitation:  
50A/µs  
ITSM  
IH & IL  
10  
I2t  
T (°C)  
j
tp(ms)  
-40  
-20  
0
20  
40  
60  
80  
100  
120 140  
1
0.01  
0.10  
1.00  
10.00  
Fig.10 Relative variation of critical rate of decrease  
of main current versus junction temperature  
Fig.9 Relative variation of critical rate of decrease  
of main current versus (dV/dt)c (typical values).  
(dl/dt)c [T ] / (dl/dt)c [T specified]  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
j
j
2.4  
2.2  
2.0  
1.8  
1.6  
6
5
4
1.4  
A
3
2
1
0
1.2  
1.0  
0.8  
S
D
0.6  
0.4  
0.2  
0.0  
T
T (°C)  
j
(dV/dt)c (V/µs)  
0.1  
1.0  
10.0  
100.0  
0
25  
50  
75  
100  
125  
Fig.11 DPAK thermal resistance junction to  
ambient versus copper surface under  
tab (priented circuit board Fr4, copper  
thickness:35 µm)  
Rth(j-a)°(C/W)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
S(cm2)  
20  
0
4
8
12  
16  
24  
28 32  
36  
40  
www.nellsemi.com  
Page 5 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
16.13 (0.635)  
15.87 (0.625)  
PIN  
8.89 (0.350)  
8.38 (0.330)  
1
2
3
4.06 (0.160)  
3.56 (0.140)  
29.16 (1.148)  
28.40 (1.118)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-251  
(I-PAK)  
6.6(0.26)  
6.4(0.52)  
2.4(0.095)  
2.2(0.086)  
1.5(0.059)  
0.62(0.024)  
0.48(0.019)  
5.4(0.212)  
5.2(0.204)  
1.37(0.054)  
6.2(0.244)  
6(0.236)  
4T  
16.3(0.641)  
15.9(0.626)  
1.9(0.075)  
1.8(0.071)  
9.4(0.37)  
9(0.354)  
0.85(0.033)  
0.76(0.03)  
0.65(0.026)  
0.55(0.021)  
4.6(0.181)  
4.4(0.173)  
0.62(0.024)  
0.45(0.017)  
TO-252  
(D-PAK)  
2.4(0.095)  
2.2(0.086)  
6.6(0.259)  
6.4(0.251)  
1.5(0.059)  
5.4(0.212)  
5.2(0.204)  
0.62(0.024)  
0.48(0.019)  
1.37(0.054)  
2
6.2(0.244)  
6(0.236)  
9.35(0.368)  
10.1(0.397)  
1
2
3
0.89(0.035)  
0.62(0.024)  
0.45(0.017)  
0.64(0.025)  
1.14(0.045)  
0.76(0.030)  
2.28(0.090)  
4.57(0.180)  
www.nellsemi.com  
Page 6 of 7  
RoHS  
4T Series RoHS  
SEMICONDUCTOR  
Case Style  
ITO-220AB  
10.6  
10.4  
3.4  
3.1  
2.8  
2.6  
3.7  
3.2 7.1  
6.7  
16.0  
15.8  
16.4  
15.4  
2
1
3
10°  
3.3  
3.1  
13.7  
13.5  
0.9  
0.7  
0.48  
0.44  
2.54  
TYP  
2.54  
TYP  
2.85  
2.65  
4.8  
4.6  
All dimensions in millimeters  
www.nellsemi.com  
Page 7 of 7  
厂商 型号 描述 页数 下载

NELLSEMI

 		4T06A-A 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-CW 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-D 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-S 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-SW 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-T 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06A-TW 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06AF-A 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06AF-CW 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

NELLSEMI

 		4T06AF-S 三端双向可控硅，4A无缓冲器，逻辑层次和水平[ TRIACs, 4A Snubberless, Logic Level and Standard ] 7 页

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