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IXFV16N80P

型号：

IXFV16N80P

描述：

PolarHV功率MOSFET[ PolarHV Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

207 K

下载PDF手册
PolarHVTM  
Power MOSFET  
IXFH 16N80P  
IXFT 16N80P  
IXFV 16N80P  
IXFV 16N80PS  
VDSS = 800  
ID25 = 16  
V
A
RDS(on) ≤ 600 mΩ  
N-Channel Enhancement Mode  
Fast Recovery Diode  
trr  
≤ 250 ns  
Avalanche Rated  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25°C  
16  
40  
A
A
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
8
30  
A
mJ  
J
G
S
D (TAB)  
EAR  
EAS  
1.0  
PLUS220 (IXFV)  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
10  
V/ns  
PD  
TC = 25°C  
460  
W
G
D
S
D (TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220SMD (IXFV...S)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
° C  
° C  
Md  
Mounting torque (TO-247)  
Mounting force (PLUS220)  
1.13/10 Nm/lb.in.  
FC  
11..65/2.5..15  
N/lb  
G
S
D (TAB)  
D = Drain  
TAB = Drain  
Weight  
TO-247  
TO-268  
PLUS220 & PLUS220SMD  
6.0  
5.0  
4.0  
g
g
g
G = Gate  
S = Source  
Features  
Symbol  
Test Conditions  
Characteristic Values  
z Fast Recovery diode  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z Unclamped Inductive Switching (UIS)  
rated  
z International standard packages  
z Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
3.0  
5.0  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
Advantages  
z
TJ = 125°C  
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
600 mΩ  
z
High power density  
DS99599E(07/06)  
© 2006 IXYS All rights reserved  
IXFH 16N80P IXFT 16N80P  
IXFV 16N80P IXFV 16N80PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
9
16  
S
Ciss  
Coss  
Crss  
4600  
330  
23  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
27  
32  
75  
29  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = VDSS, ID = 0.5 ID25  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
71  
21  
23  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.27 °C/W  
°C/W  
(TO-247)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
16  
48  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V, pulse test  
1.5  
250  
trr  
IF = 25A, -di/dt = 100 A/μs  
150  
7
ns  
A
IRM  
QRM  
VR = 100V; VGS = 0 V  
0.7  
μC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFH 16N80P IXFT 16N80P  
IXFV 16N80P IXFV 16N80PS  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
16  
14  
12  
10  
8
24  
22  
20  
18  
16  
14  
12  
10  
8
V
= 10V  
7V  
GS  
V
= 10V  
7V  
GS  
6V  
6V  
6
4
6
5V  
6
4
2
5V  
10  
2
0
0
0
1
2
3
4
5
7
8
9
10  
0
2
4
6
8
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 8A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
16  
14  
12  
10  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
V
= 10V  
GS  
7V  
6V  
I
= 16A  
D
5V  
I
= 8A  
D
6
4
2
0.7  
0.4  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. R  
Normalized to I = 8A Value  
Fig  
.
6.  
M
a
xi  
m
u
m
D
r
ai  
n
C
u
r
r
e
n
t vs.  
DS(on)
D
Case Temperature  
vs. Drain Current  
2.6  
20  
18  
16  
14  
12  
10  
8
2.4  
V
= 10V  
GS  
T = 125ºC  
J
2.2  
2
1.8  
1.6  
1.4  
6
T = 25ºC  
J
1.2  
4
1
2
0.8  
0
0 25 50 75 100 125 150  
-50  
-25  
0
2
4
6
8
1
0
12  
14  
1
6
18  
2
0
2224  
TC - Degrees Centigrade  
I - Amperes  
D
© 2006 IXYS All rights reserved  
IXFH 16N80P IXFT 16N80P  
IXFV 16N80P IXFV 16N80PS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
28  
24  
20  
16  
12  
8
20  
18  
16  
14  
12  
10  
8
T
J
= 125ºC  
25ºC  
- 40ºC  
T
J
= - 40ºC  
25ºC  
125ºC  
6
4
4
2
0
0
3
3.5  
4
4.5  
5
5.5  
6
0
2
4
6
8
10 12 14 16 18 20 22 24  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
45  
40  
35  
30  
25  
20  
15  
10  
5
I
I
= 8A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
20  
10  
0
5
10  
15  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
F_16N80P (67) 04-28-06.xls  
IXFH 26N60P IXFT 26N60P  
IXFV 26N60P IXFV 26N60PS  
TO-247 AD (IXFH) Outline  
TO-268 (IXFT) Outline  
PLUS220 (IXFV) Outline  
1
2
3
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
PLUS220SMD (IXFV_S) Outline  
© 2006 IXYS All rights reserved  
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