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IXFB110N60P3

型号：

IXFB110N60P3

描述：

Polar3 HiPerFET功率MOSFET[ Polar3 HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

148 K

下载PDF手册
Advance Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 110A  
RDS(on) ≤ 56mΩ  
IXFB110N60P3  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
G
VDGR  
D
S
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G = Gate  
D
= Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
110  
275  
A
A
S
= Source  
Tab = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
55  
3
A
J
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
35  
V/ns  
W
Features  
1890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
Avalanche Rated  
z
z
z
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
°C  
°C  
TSOLD  
FC  
260  
30..120/6.7..27  
10  
Mounting Force  
N/lb.  
g
Advantages  
z
Weight  
Easy to Mount  
Space Savings  
z
Applications  
z DC-DC Converters  
z Battery Chargers  
z Switch-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Uninterrupted Power Supplies  
z AC Motor Drives  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z High Speed Power Switching  
Applications  
5.0  
±200 nA  
IDSS  
50 μA  
TJ = 125°C  
6 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • IDSS, Note 1  
56 mΩ  
DS100314(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFB110N60P3  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 55A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
65  
105  
S
Ciss  
Coss  
Crss  
18  
1650  
5.5  
nF  
pF  
pF  
RGi  
1.0  
63  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
RG = 1Ω (External)  
tr  
19  
77  
ns  
ns  
td(off)  
tf  
11  
ns  
Qg(on)  
Qgs  
245  
83  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS  
Qgd  
53  
RthJC  
RthCS  
0.066 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
110  
440  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
250 ns  
IF = 55A, -di/dt = 100A/μs  
1.6  
14.0  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB110N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
8V  
100  
80  
60  
40  
20  
0
7V  
7V  
6V  
6V  
5V  
60  
40  
20  
5V  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
100  
80  
60  
40  
20  
0
I D = 110A  
6V  
I D = 55A  
5V  
4V  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
120  
100  
80  
60  
40  
20  
0
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFB110N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
160  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 300V  
I D = 55A  
140  
120  
100  
80  
I G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
50  
100  
150  
200  
250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
C
iss  
RDS(on) Limit  
100µs  
C
oss  
TJ = 150ºC  
C
10  
rss  
TC = 25ºC  
1ms  
Single Pulse  
= 1 MHz  
5
f
1
1
0
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFB110N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_110N60P3(K9)03-16-11  
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