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IXFB44N100P

型号：

IXFB44N100P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

129 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 44A  
RDS(on) ≤ 220mΩ  
≤ 300ns  
IXFB44N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
PLUS264TM (IXFB)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
(TAB)  
G
D
S
ID25  
IDM  
TC = 25°C  
44  
A
A
TC = 25°C, pulse width limited by TJM  
110  
G = Gate  
S = Source  
D
= Drain  
IAR  
TC = 25°C  
TC = 25°C  
22  
2
A
J
TAB = Drain  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
15  
V/ns  
W
Features  
1250  
z Fast recovery diode  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
z Low package inductance  
- easy to drive and to protect  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Advantages  
FC  
Mounting torque  
30..120/6.7..27  
10  
N/lb.  
g
z
Plus 264TM package for clip or spring  
mounting  
Space savings  
High power density  
Weight  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Switched-mode and resonant-mode  
power supplies  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
z DC-DC Converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1000  
3.5  
V
V
z Laser Drivers  
z AC and DC motor controls  
z Robotics and servo controls  
6.5  
± 200 nA  
50 μA  
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
3
mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
220 mΩ  
DS99867A(04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB44N100P  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
20  
35  
S
Ciss  
Coss  
Crss  
19  
1060  
41  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
RGi  
Gate input resistance  
1.70  
Ω
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
60  
68  
90  
56  
ns  
ns  
ns  
ns  
Qg(on)  
Qgs  
305  
104  
126  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.13  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.5  
trr  
300 ns  
IF = 22A, -di/dt = 100A/μs  
QRM  
IRM  
2.5  
μC  
VR = 100V  
17  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB44N100P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
8V  
7V  
0
0
0
0
1
2
3
4
5
6
7
8
9
10  
11  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
8V  
VGS = 10V  
I D = 44A  
I D = 22A  
7V  
6V  
0
2
4
6
8
10 12 14 16 18 20 22 24  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
10  
20  
30  
40  
50  
60  
70  
80  
90  
TC - Degrees Centigrade  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXFB44N100P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
450  
10  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
1.1  
35  
9
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
130  
120  
110  
100  
90  
VDS = 500V  
D = 22A  
I G = 10mA  
I
80  
70  
60  
50  
6
TJ = 125ºC  
40  
4
30  
TJ = 25ºC  
20  
2
10  
0
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
f = 1 MHz  
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: F_44N100P(97)4-01-08-D  
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