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IXFH14N100Q2_08

型号：

IXFH14N100Q2_08

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFETs Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

146 K

下载PDF手册
Preliminary Technical Information  
HiPerFETTM  
PowerMOSFETs  
Q2-Class  
IXFH14N100Q2  
VDSS  
ID25  
= 1000V  
= 14A  
RDS(on) ≤ 950mΩ  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
TO-247(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
(TAB)  
G
D
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
ID25  
IDM  
TC =25°C  
TC = 25°C, pulse width limited by TJM  
14  
56  
A
A
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
IA  
TC =25°C  
14  
A
J
EAS  
dV/dt  
PD  
TC =25°C  
2.5  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC =25°C  
20  
V/ns  
W
500  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀDouble metal process for low gate  
resistance  
TJM  
Tstg  
ꢀInternational standard package  
ꢀEpoxymeetUL94V-0, flammability  
classification  
-55 ... +150  
TL  
1.6mm (0.063 in) from case for 10s  
Mountingtorque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
ꢀAvalanche energy and current rated  
ꢀFast intrinsic Rectifier  
Weight  
6
g
Applications  
ꢀ
DC-DCconverters  
Switched-mode and resonant-mode  
ꢀ
power supplies, >500kHz switching  
DCchoppers  
Pulsegeneration  
Laserdrivers  
ꢀ
Symbol  
TestConditions  
CharacteristicValues  
ꢀ
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
ꢀ
VDSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
1000  
3.0  
V
V
VGS(th)  
5.5  
Advantages  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±200 nA  
25 μA  
ꢀ
VDS = VDSS  
VGS =0V  
Easy to mount  
Spacesavings  
ꢀ
TJ = 125°C  
1
mA  
ꢀ
High power density  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
950 mΩ  
DS99073A(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH14N100Q2  
Symbol  
TestConditions  
CharacteristicValues  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
15  
28  
S
Ciss  
Coss  
Crss  
2800  
287  
pF  
pF  
pF  
∅P  
1
2
3
100  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
12  
10  
28  
12  
ns  
ns  
ns  
ns  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
83  
20  
40  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
Qgd  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCK  
0.25 °C/W  
°C/W  
0.21  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-DrainDiode  
Symbol  
TestConditions  
CharacteristicValues  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
IS  
VGS = 0V  
14 A  
ISM  
Repetitive, pulse width limited by TJM  
56  
A
V
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
trr  
QRM  
IRM  
300 ns  
μC  
IF = 25A, -di/dt = 100 A/μs, VR = 100 V  
0.8  
7
A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH14N100Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
27  
24  
21  
18  
15  
12  
9
14  
12  
10  
8
V
GS = 10V  
8V  
V
GS = 10V  
7V  
7V  
6
6V  
5V  
6V  
5V  
4
6
2
3
0
0
0
0
0
2
4
6
8
VDS - Volts  
10  
12  
14  
0
3
6
9
12 15 18 21 24 27 30  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.  
Junction Temperature  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1. 6  
V
GS = 10V  
7V  
V
GS = 10V  
6V  
5V  
I D= 14A  
I D= 7A  
6
4
1. 2  
2
0.8  
0
0.4  
4
8
12 16  
VDS - Volts  
20  
24  
28  
-50  
-25  
0
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
150  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case Temperature  
16  
2.6  
2.4  
2.2  
2.0  
1. 8  
1. 6  
1. 4  
1. 2  
1. 0  
0.8  
V
GS = 10V  
14  
12  
10  
8
º
TJ = 125 C  
6
4
º
TJ = 25 C  
2
0
3
6
9
12  
15  
I D - Amperes  
18  
21  
24  
27  
-50  
-25  
0
25  
50  
75  
TC - Degrees Centigrade  
100  
125  
150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH14N100Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
28  
24  
20  
16  
12  
8
20  
18  
16  
14  
12  
10  
8
º
TJ = - 40 C  
º
TJ = 125 C  
25ºC  
º
25 C  
- 40ºC  
º
125 C  
6
4
4
2
0
0
4.0  
4.5  
5.0  
5.5  
VGS - Volts  
6.0  
6.5  
7.0  
0
4
8
12 16  
D - Amperes  
20  
24  
28  
I
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
45  
40  
35  
30  
25  
20  
15  
10  
5
10  
9
8
7
6
5
4
3
2
VDS = 500V  
I D= 7A  
I G= 10mA  
º
TJ = 125 C  
º
TJ = 25 C  
1
0
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
VSD - Volts  
0
10  
20  
30  
40  
50  
60  
Q G - nanoCoulombs  
70  
80  
90  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10000  
100 0  
10 0  
1
0.1  
C
iss  
C
oss  
0.01  
C
rss  
f
= 1MHz  
5
0.001  
10  
0.01  
0.1  
1
10  
Pulse Width - milliseconds  
100  
1000  
0
10  
15  
20  
VDS - Volts  
25  
30  
35  
40  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_14N100Q2 (7F)5-28-08-B  
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