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NVTR01P02L

型号:

NVTR01P02L

描述:

功率MOSFET中的???? 20 V,A ???? 1.3 A, ​​PA ????频道SOTA ???? 23套餐包可用[ Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package Packages are Available ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

165 K

Product specification  
NTR1P02L, NVTR01P02L  
Power MOSFET  
V
R
Max  
I Max  
D
(BR)DSS  
DS(on)  
20 V, 1.3 A, PChannel  
SOT23 Package  
20 V  
220 mW @ 4.5 V  
1.3 A  
PChannel  
These miniature surface mount MOSFETs low R  
assure  
D
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are DCDC converters and power management in  
portable and batterypowered products such as computers, printers,  
PCMCIA cards, cellular and cordless telephones.  
G
Features  
Low R  
Provides Higher Efficiency and Extends Battery Life  
Miniature SOT23 Surface Mount Package Saves Board Space  
S
DS(on)  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
NVTR Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
PbFree and HalideFree Packages are Available  
3
Drain  
3
1
2
P02 M G  
G
SOT23  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
CASE 318  
STYLE 21  
1
2
Rating  
DraintoSource Voltage  
GatetoSource Voltage Continuous  
Drain Current  
Symbol  
Value  
20  
12  
Unit  
V
Gate  
Source  
V
DSS  
P02  
M
G
= Specific Device Code  
= Date Code*  
= PbFree Package  
V
GS  
V
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
I
1.3  
4.0  
A
A
Continuous @ T = 25°C  
Pulsed Drain Current (t 10 ms)  
D
A
I
DM  
p
Total Power Dissipation @ T = 25°C  
P
D
400  
mW  
A
ORDERING INFORMATION  
Operating and Storage Temperature Range  
T , T  
55 to  
150  
°C  
J
stg  
Device  
Package  
Shipping  
Thermal Resistance JunctiontoAmbient  
R
300  
260  
°C/W  
°C  
q
JA  
NTR1P02LT1G  
NTR1P02LT3G  
NVTR01P02LT1G  
SOT23  
(PbFree)  
3000 Tape & Reel  
Maximum Lead Temperature for Soldering  
T
L
Purposes, (1/8from case for 10 s)  
SOT23  
(PbFree)  
10,000 Tape &  
Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT23  
(PbFree)  
3000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
Product specification  
NTR1P02L, NVTR01P02L  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Parameter  
Test Condition  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown  
Voltage  
(V = 0 V, I = 10 mA)  
V
(BR)DSS  
20  
V
GS  
D
Zero Gate Voltage Drain Current  
(V = 16 V, V = 0 V)  
I
1.0  
10  
mA  
DS  
GS  
DSS  
(V = 16 V, V = 0 V,  
DS  
GS  
T = 125°C)  
J
GateBody Leakage Current  
(V  
GS  
=
12 V, V = 0 V)  
I
100  
nA  
DS  
GSS  
TY CHARACTERISTICS (Note 1)  
Gate Threshold Voltage  
(V = V , I = 250 mA)  
V
GS(th)  
0.7  
1.0  
1.25  
V
DS  
GS  
D
Static DraintoSource  
OnResistance  
(V = 4.5 V, I = 0.75 A)  
r
0.140  
0.200  
0.22  
0.35  
W
GS  
D
DS(on)  
(V = 2.5 V, I = 0.5 A)  
GS  
D
DYNAMIC CHARACTERISTICS  
Input Capacitance  
(V = 5.0 V)  
C
225  
130  
55  
pF  
ns  
DS  
iss  
Output Capacitance  
Transfer Capacitance  
(V = 5.0 V)  
DS  
C
oss  
(V = 5.0 V)  
DS  
C
rss  
SWITCHING CHARACTERISTICS (Note 2)  
TurnOn Delay Time  
t
7.0  
15  
18  
9
d(on)  
(V = 4.5 V, V = 5.0 V,  
Rise Time  
t
GS  
D
DD  
r
I
= 1.0 A, R = 5.0 W,  
L
TurnOff Delay Time  
Fall Time  
t
d(off)  
R
= 6.0 W)  
G
t
f
Total Gate Charge  
(V = 16 V, I = 1.5 A,  
Q
T
3.1  
nC  
A
DS  
D
V
= 4.5 V)  
GS  
SOURCEDRAIN DIODE CHARACTERISTICS  
Continuous Current  
I
S
0.6  
0.75  
1.0  
Pulsed Current  
I
SM  
Forward Voltage (Note 2)  
Reverse Recovery Time  
(V = 0 V, I = 0.6 A)  
V
SD  
V
GS  
S
t
rr  
16  
11  
ns  
(I = 1.0 A, V = 0 V,  
S
GS  
t
a
dI /dt = 100 A/ms)  
S
t
5.5  
8.5  
b
Reverse Recovery Stored Charge  
Q
nC  
RR  
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.  
2. Switching characteristics are independent of operating junction temperature.  
http://www.twtysemi.com  
sales@twtysemi.com  
2 of 2  
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