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NX3008NBKMB

型号：

NX3008NBKMB

描述：

30 V ，单N沟道沟槽MOSFET[ 30 V, single N-channel Trench MOSFET ]

品牌：

NXP[ NXP ]

页数：

15 页

PDF大小：

1055 K

下载PDF手册
NX3008NBKMB  
SOT883B  
30 V, single N-channel Trench MOSFET  
Rev. 1 — 11 May 2012  
Product data sheet  
1. Product profile  
1.1 General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small  
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench  
MOSFET technology.  
1.2 Features and benefits  
Very fast switching  
ESD protection up to 2 kV  
Low threshold voltage  
Trench MOSFET technology  
Ultra thin package profile with  
0.37 mm height  
1.3 Applications  
Relay driver  
Low-side loadswitch  
Switching circuits  
High-speed line driver  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-8  
-
8
V
[1]  
ID  
VGS = 4.5 V; Tamb = 25 °C  
530  
mA  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C  
-
1
1.4  
Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
G
S
D
gate  
D
1
2
2
source  
drain  
3
3
G
Transparent  
top view  
SOT883B (DFN1006B-3)  
S
017aaa255  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT883B  
NX3008NBKMB  
DFN1006B-3  
Leadless ultra small plastic package; 3 solder lands;  
body 1.0 × 0.6 × 0.37 mm  
4. Marking  
Table 4.  
Marking codes  
Type number  
NX3008NBKMB  
Marking code  
0000 0011  
PIN 1 INDICATION  
READING DIRECTION  
READING EXAMPLE:  
0111  
1011  
MARKING CODE  
(EXAMPLE)  
READING DIRECTION  
006aac673  
Fig 1. DFN1006B-3 (SOT883B) binary marking code description  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
2 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
30  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
VGS  
-8  
8
V
[1]  
[1]  
ID  
VGS = 4.5 V; Tamb = 25 °C  
VGS = 4.5 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
-
530  
330  
2.1  
360  
715  
mA  
mA  
A
-
IDM  
Ptot  
peak drain current  
-
[2]  
[1]  
total power dissipation  
-
mW  
mW  
-
Tsp = 25 °C  
-
2700 mW  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
150  
150  
150  
°C  
°C  
°C  
Tamb  
Tstg  
Source-drain diode  
[1]  
[3]  
IS  
source current  
Tamb = 25 °C  
-
-
530  
mA  
V
ESD maximum rating  
VESD  
electrostatic discharge voltage HBM  
2000  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[3] Measured between all pins.  
001aao121  
001aao122  
120  
120  
P
I
der  
(%)  
der  
(%)  
80  
80  
40  
0
40  
0
-75  
-25  
25  
75  
125  
175  
-75  
-25  
25  
75  
125  
175  
T (°C)  
j
T (°C)  
j
Fig 2. Normalized total power dissipation as a  
function of junction temperature  
Fig 3. Normalized continuous drain current as a  
function of junction temperature  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
3 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
aaa-002631  
10  
I
D
limit R  
= V / I  
DS D  
DSon  
(A)  
1
(1)  
-1  
(2)  
(3)  
10  
(4)  
(5)  
-2  
10  
10  
-1  
2
1
10  
10  
V
(V)  
DS  
IDM is single pulse  
(1) tp = 1 ms  
(2) DC; Tsp = 25 °C  
(3) tp = 10 ms  
(4) tp = 100 ms  
(5) DC; Tamb = 25 °C; drain mounting pad 1 cm2  
Fig 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source  
voltage  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-a)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
305  
150  
Max  
360  
175  
Unit  
K/W  
K/W  
[1]  
[2]  
thermal resistance  
from junction to  
ambient  
in free air  
-
-
Rth(j-sp)  
thermal resistance  
from junction to solder  
point  
-
-
40  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
4 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
017aaa109  
3
10  
duty cycle = 1  
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.25  
0.05  
0.1  
0
0.02  
0.01  
10  
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa110  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
2
10  
0.5  
0.33  
0.2  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
10  
−3  
−2  
−1  
2
3
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, mounting pad for drain 1 cm2  
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
5 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
7. Characteristics  
Table 7.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
30  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
0.6  
0.9  
1.1  
IDSS  
drain leakage current  
VDS = 30 V; VGS = 0 V; Tj = 25 °C  
VDS = 30 V; VGS = 0 V; Tj = 150 °C  
VGS = 8 V; VDS = 0 V; Tj = 25 °C  
VGS = -8 V; VDS = 0 V; Tj = 25 °C  
VGS = 4.5 V; ID = 350 mA; Tj = 25 °C  
VGS = 4.5 V; ID = 350 mA; Tj = 150 °C  
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C  
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C  
VDS = 10 V; ID = 350 mA; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
Ω
-
10  
1
IGSS  
gate leakage current  
0.2  
0.2  
1
1
RDSon  
drain-source on-state  
resistance  
1.4  
2.5  
2.1  
2.8  
-
1.8  
1.4  
2
Ω
Ω
Ω
gfs  
forward  
310  
mS  
transconductance  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
VDS = 15 V; ID = 400 mA; VGS = 4.5 V;  
Tj = 25 °C  
-
-
-
-
-
-
0.52  
0.17  
0.08  
34  
0.68  
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
50  
-
Coss  
Crss  
6.5  
reverse transfer  
capacitance  
2.2  
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 20 V; RL = 250 Ω; VGS = 4.5 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
15  
11  
69  
19  
30  
ns  
ns  
ns  
ns  
-
turn-off delay time  
fall time  
138  
-
Source-drain diode  
VSD  
source-drain voltage  
IS = 350 mA; VGS = 0 V; Tj = 25 °C  
0.47  
0.85  
1.2  
V
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
6 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
001aao267  
001aao268  
-3  
-4  
-5  
-6  
0.4  
10  
D
4.5 V  
I
D
(A)  
2.5 V  
I
2 V  
(A)  
0.3  
(1)  
(2)  
(3)  
10  
1.75 V  
1.5 V  
0.2  
0.1  
0.0  
10  
10  
V
= 1.25 V  
GS  
0
1
2
3
4
0.0  
0.5  
1.0  
1.5  
V
(V)  
V
(V)  
GS  
DS  
Tj = 25 °C  
Tj = 25 °C; VDS = 5 V  
(1) minimum values  
(2) typical values  
(3) maximum values  
Fig 7. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 8. Subthreshold drain current as a function of  
gate-source voltage  
001aao269  
001aao270  
6
6
R
(on)  
R
(on)  
DS  
(Ω)  
DS  
(Ω)  
(1)  
(2)  
(3)  
4
2
0
4
(4)  
2
0
(1)  
(2)  
(5)  
(6)  
0.0  
0.1  
0.2  
0.3  
0.4  
0
1
2
3
4
5
I
D
(A)  
V
(V)  
GS  
Tj = 25 °C  
ID = 400 mA  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
(1) VGS = 1.5 V  
(2) VGS = 1.75 V  
(3) VGS = 2.0 V  
(4) VGS = 2.25 V  
(5) VGS = 2.5 V  
(6) VGS = 4.5 V  
Fig 9. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 10. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
7 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
001aao271  
001aao272  
0.4  
2.0  
1.5  
1.0  
0.5  
0.0  
I
D
(A)  
a
(1)  
(2)  
0.3  
0.2  
0.1  
0.0  
0
1
2
3
-60  
0
60  
120  
180  
V
(V)  
T (˚C)  
j
GS  
VDS > ID x RDSon  
(1) Tj = 25 °C  
(2) Tj = 150 °C  
Fig 11. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 12. Normalized drain-source on-state resistance as  
a function of junction temperature; typical  
values  
001aao273  
001aao274  
2
1.5  
10  
V
GS(th)  
(V)  
(1)  
C
(1)  
(2)  
(pF)  
1.0  
0.5  
0.0  
10  
(2)  
(3)  
(3)  
1
-1  
2
-60  
0
60  
120  
180  
10  
1
10  
10  
T (˚C)  
j
V
(V)  
DS  
ID = 0.25 mA; VDS = VGS  
(1) maximum values  
(2) typical values  
f = 1 MHz; VGS = 0 V  
(1)Ciss  
(2)Coss  
(3) minimum values  
(3)Crss  
Fig 13. Gate-source threshold voltage as a function of  
junction temperature  
Fig 14. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
8 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
001aao275  
5
V
DS  
V
GS  
(V)  
I
4
3
2
1
0
D
V
GS(pl)  
V
GS(th)  
GS  
V
Q
Q
GS1  
GS2  
Q
Q
GD  
GS  
Q
G(tot)  
003aaa508  
0.0  
0.2  
0.4  
0.6  
Q
G
(nC)  
ID = 0.4 A; VDS = 15 V; Tamb = 25 °C  
Fig 15. Gate-source voltage as a function of gate  
charge; typical values  
Fig 16. Gate charge waveform definitions  
001aao276  
0.4  
I
S
(A)  
0.3  
(1)  
(2)  
0.2  
0.1  
0.0  
0.0  
0.4  
0.6  
1.2  
V
(V)  
SD  
VGS = 0 V  
(1) Tj = 150 °C  
(2) Tj = 25 °C  
Fig 17. Source current as a function of source-drain voltage; typical values  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
9 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
8. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig 18. Duty cycle definition  
9. Package outline  
0.65  
0.55  
0.40  
0.34  
0.35  
0.20  
0.12  
0.04 max  
1
2
0.30  
0.22  
1.05  
0.95  
0.65  
0.30  
0.22  
3
0.55  
0.47  
Dimensions in mm  
11-11-02  
Fig 19. Package outline SOT883B (DFN1006B-3)  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
10 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
10. Soldering  
Footprint information for reflow soldering  
SOT883B  
1.3  
0.7  
R0.05 (8x)  
0.9  
0.6 0.7  
0.25  
(2x)  
0.3  
0.3  
0.4  
(2x)  
0.4  
(2x)  
solder land  
solder land plus solder paste  
solder paste deposit  
occupied area  
solder resist  
Dimensions in mm  
sot883b_fr  
Fig 20. Reflow soldering footprint for SOT883B (DFN1006B-3)  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
11 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
11. Revision history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
NX3008NBKMB v.1  
20120511  
Product data sheet  
-
-
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
12 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
12. Legal information  
12.1 Data sheet status  
Document status[1] [2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URLhttp://www.nxp.com.  
Right to make changes — NXP Semiconductors reserves the right to make  
12.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
NXP Semiconductors does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with theTerms and conditions of commercial sale of NXP Semiconductors.  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
13 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G  
reenChip,HiPerSmart,HITAG,I²C-bus  
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE  
Ultralight,MoReUse,QLPAK,Silicon  
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia  
andUCODE — are trademarks of NXP B.V.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
HD Radio andHD Radio logo — are trademarks of iBiquity Digital  
Corporation.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
13. Contact information  
For more information, please visit:http://www.nxp.com  
For sales office addresses, please send an email to:salesaddresses@nxp.com  
NX3008NBKMB  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 1 — 11 May 2012  
14 of 15  
NX3008NBKMB  
NXP Semiconductors  
30 V, single N-channel Trench MOSFET  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Test information. . . . . . . . . . . . . . . . . . . . . . . . .10  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14  
12.1  
12.2  
12.3  
12.4  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . .14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 11 May 2012  
Document identifier: NX3008NBKMB  
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