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Product specification
KXU03N25
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
BVDSS
VGS(th)
IGSS
Test conditions
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VGS = ±20 V, VDS = 0 V
VDS =250 V, VGS = 0 V
Min
250
2.0
Typ Max
Unit
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body leakage current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Total Gate Charge
4.0
±100
10
V
nA
IDSS
μA
Ω
RDS(on) VGS = 10 V, ID = 1.5 A
1.4
2.3
9.8
2.1
4.2
307
57
14
7
2.0
gFS
Qg
VDS = 50 V, ID = 1.4 A
S
15
VDS = 200V ,VGS = 10 V , ID=3 A
nC
pF
Gate-Source Charge
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Gate-Drain Charge
Input Capacitance
430
75
25
15
15
30
15
1.6
VDS =25V ,VGS = 0 , f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off Delay Time
5
VDD = 125V ,VGS=10V,RG = 4.7Ω ,
ID = 3A
ns
V
td(off)
tf
15
6
Turn-Off Fall Time
Drain-Source Diode Forward Voltage
VSD
trr
0.9
VGS = 0 V, IS = 3 A,dIS / dt = 100 A/μs
Reverse Recovery Time
153
ns
A
IS
3
Maximum Body-Diode Continuous Current
■ Marking
Marking
3N25
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