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Product specification
FZT1151A
SOT-223
Unit: mm
+0.2
+0.2
■ Features
3.50-0.2
6.50-0.2
● Low saturation Voltage
+0.2
● High Gain
0.90-0.2
+0.1
3.00-0.1
+0.3
7.00-0.3
4
1 Base
2 Collector
1
2
3
+0.1
3 Emitter
0.70-0.1
2.9
4.6
4 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-45
-40
-5
Unit
V
V
V
Continuous Collector Current
power dissipation
-3
A
PC
2.5
150
W
℃
℃
Junction temperature
Tj
Storage temperature
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cut-off current
Symbol
Test conditons
Min
-45
-40
-5.0
Typ Max
Unit
V
VCBO
VCEO
VEBO
ICBO
IC=-100μA
IC=-10mA
V
V
IE=-100μA
VCB =- 36 V, IE = 0
VEB=-4V,IC=0
-100
-100
450
nA
nA
Emitter Cut-Off Current
IEBO
IC = -10 mA; VCE = -2 V
IC = -500mA; VCE =- 2V
IC = -2A; VCE = -2V
IC =- 1.8A; IB = -70mA
IC = -3A; IB = -250mA
270
250
180
DC current gain
hFE
800
300
-0.26
-0.3
V
V
Collector to emitter saturation voltage
VCE(sat)
Output capacitance
Transition frequency
Cob
fT
VCB =-10 V, IE = 0,f=1.0MHz
IC = -50 mA; VCE =-10V; f = 50 MHz
40
pF
145
MHz
■ Marking
Marking
1151A
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