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SZESD9B

型号:

SZESD9B

描述:

瞬态电压抑制器[ Transient Voltage Suppressors ]

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

129 K

ESD9B, SZESD9B  
Transient Voltage  
Suppressors  
Micro−Packaged Diodes for ESD Protection  
The ESD9B Series is designed to protect voltage sensitive  
components from ESD. Excellent clamping capability, low leakage,  
and fast response time provide best in class protection on designs that  
are exposed to ESD. Because of its small size, it is suited for use in  
cellular phones, MP3 players, digital cameras and many other portable  
applications where board space comes at a premium.  
http://onsemi.com  
Specification Features  
• Low Capacitance 15 pF  
• Low Clamping Voltage  
• Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm)  
• Low Body Height: 0.016″ (0.4 mm)  
• Stand−off Voltage: 3.3 V, 5 V  
• Low Leakage  
SOD−923  
CASE 514AB  
• Response Time is < 1 ns  
• IEC61000−4−2 Level 4 ESD Protection  
MARKING DIAGRAM  
• AEC−Q101 Qualified and PPAP Capable  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
X M  
• This is a Pb−Free Device  
X
M
= Specific Device Code  
Date Code  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic  
Epoxy Meets UL 94 V−0  
LEAD FINISH: 100% Matte Sn (Tin)  
MOUNTING POSITION: Any  
QUALIFIED MAX REFLOW TEMPERATURE: 260°C  
Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
ESD9B3.3ST5G  
SOD−923 8000/Tape & Reel  
(Pb−Free)  
MAXIMUM RATINGS  
ESD9B5.0ST5G  
SOD−923 8000/Tape & Reel  
(Pb−Free)  
Rating  
IEC 61000−4−2 (ESD)  
Symbol  
Value  
Unit  
SZESD9B5.0ST5G SOD−923 8000/Tape & Reel  
(Pb−Free)  
Contact  
Air  
18  
18  
kV  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
IEC 61000−4−4 (EFT)  
40  
A
Total Power Dissipation on FR−5 Board  
°P °  
300  
mW  
D
(Note 1) @ T = 25°C  
A
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
400  
−55 to +150  
260  
°C/W  
°C  
Junction and Storage Temperature Range T , T  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−5 = 1.0 x 0.75 x 0.62 in.  
©
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
December, 2011 − Rev. 2  
ESD9B/D  
 
ESD9B, SZESD9B  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
I
PP  
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
PP  
I
T
I
V
R
BR RWM  
V
Clamping Voltage @ I  
V
C
V
C
PP  
V
I
V
V
V
R
T
RWM BR C  
V
RWM  
Working Peak Reverse Voltage  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
PP  
I
T
Bi−Directional TVS  
C
Capacitance @ V = 0 V and f = 1.0 MHz  
R
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
V
RWM  
I
R
(mA)  
V
BR  
(V) @ I  
T
(V)  
@ V  
(Note 2)  
I
T
C (pF)  
V
C
V (V) @ I = 1 A  
C PP  
RWM  
Per IEC61000−4−2  
Max Per 8 x 20 ms  
Device  
Marking  
(Note 3)  
(Note 4)  
Max  
Max  
Min  
Max  
mA  
Typ  
Device  
ESD9B3.3ST5G  
2*  
3.3  
1.0  
5.0  
7.0  
1.0  
15  
Figures 1 and 2  
See Below  
10.5  
ESD9B5.0ST5G,  
SZESD9B5.0ST5G  
E
5.0  
1.0  
5.8  
7.8  
1.0  
15  
Figures 1 and 2  
See Below  
12.5  
* Rotated 270°.  
2. V is measured with a pulse test current I at an ambient temperature of 25°C.  
BR  
T
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.  
4. Surge current waveforms per Figure 5.  
Figure 1. ESD Clamping Voltage Screenshot  
Figure 2. ESD Clamping Voltage Screenshot  
Positive 8 kV Contact per IEC61000−4−2  
Negative 8 kV Contact per IEC61000−4−2  
http://onsemi.com  
2
 
ESD9B, SZESD9B  
IEC61000−4−2 Waveform  
IEC 61000−4−2 Spec.  
I
peak  
Test  
Voltage  
(kV)  
First Peak  
Current  
(A)  
100%  
90%  
Current at  
30 ns (A)  
Current at  
60 ns (A)  
Level  
1
2
3
4
2
4
6
8
7.5  
15  
4
8
2
4
6
8
I @ 30 ns  
22.5  
30  
12  
16  
I @ 60 ns  
10%  
t
P
= 0.7 ns to 1 ns  
Figure 3. IEC61000−4−2 Spec  
Oscilloscope  
ESD Gun  
TVS  
50 W  
Cable  
50 W  
Figure 4. Diagram of ESD Test Setup  
The following is taken from Application Note  
AND8308/D − Interpretation of Datasheet Parameters  
for ESD Devices.  
systems such as cell phones or laptop computers it is not  
clearly defined in the spec how to specify a clamping voltage  
at the device level. ON Semiconductor has developed a way  
to examine the entire voltage waveform across the ESD  
protection diode over the time domain of an ESD pulse in the  
form of an oscilloscope screenshot, which can be found on  
the datasheets for all ESD protection diodes. For more  
information on how ON Semiconductor creates these  
screenshots and how to interpret them please refer to  
AND8307/D.  
ESD Voltage Clamping  
For sensitive circuit elements it is important to limit the  
voltage that an IC will be exposed to during an ESD event  
to as low a voltage as possible. The ESD clamping voltage  
is the voltage drop across the ESD protection diode during  
an ESD event per the IEC61000−4−2 waveform. Since the  
IEC61000−4−2 was written as a pass/fail spec for larger  
100  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I /2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
t, TIME (ms)  
60  
80  
Figure 5. 8 X 20 ms Pulse Waveform  
http://onsemi.com  
3
ESD9B, SZESD9B  
PACKAGE DIMENSIONS  
SOD−923  
CASE 514AB−01  
ISSUE B  
−X−  
D
NOTES:  
−Y−  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
E
1
2
b 2X  
0.08 (0.0032) X Y  
MILLIMETERS  
DIM MIN NOM MAX MIN  
INCHES  
NOM MAX  
A
A
b
c
0.34  
0.15  
0.07  
0.75  
0.55  
0.95  
0.05  
0.37  
0.20  
0.12  
0.80  
0.60  
1.00  
0.10  
0.40  
0.25  
0.17  
0.85  
0.65  
1.05  
0.15  
0.013 0.015 0.016  
0.006 0.008 0.010  
0.003 0.005 0.007  
0.030 0.031 0.033  
0.022 0.024 0.026  
0.037 0.039 0.041  
0.002 0.004 0.006  
D
E
H
E
L
c
L
H
E
SOLDERING FOOTPRINT*  
0.90  
0.40  
0.30  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
ESD9B/D  
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