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LY6112816ML-20LLE

型号：

LY6112816ML-20LLE

描述：

5V 128K ×16位高速CMOS SRAM[ 5V 128K X 16 BIT HIGH SPEED CMOS SRAM ]

品牌：

LYONTEK[ Lyontek Inc. ]

页数：

13 页

PDF大小：

167 K

下载PDF手册
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
REVISION HISTORY  
Revision  
Rev. 1.0  
Rev. 1.1  
Description  
Initial Issue  
Revised Test Condition of ICC  
Issue Date  
Aug.12.2007  
Apr. 17.2009  
FEATURES ORDERING INFORMATION  
Revised  
&
Lead free and green package available to Green package  
available  
ABSOLUTE MAXIMUN RATINGS  
Deleted TSOLDER in  
ORDERING INFORMATION  
Added packing type in  
Rev.1.2  
Aug.25.2010  
ORDERING INFORMATION  
Revised  
in page 11  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
0
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
FEATURES  
GENERAL DESCRIPTION  
The LY6112816 is a 2,097,152-bit low power CMOS  
static random access memory organized as 131,072  
words by 16 bits. It is fabricated using very high  
performance, high reliability CMOS technology. Its  
standby current is stable within the range of  
operating temperature.  
„ Fast access time : 15/20ns  
„ Low power consumption:  
Operating current : 140/110mA(MAX.)  
Standby current :  
3mA(MAX. for 15/20ns)  
100 A( (MAX. for 15/20ns LL version)  
µ
„ Single 5V power supply  
„ All outputs TTL compatible  
„ Fully static operation  
The LY6112816 is well designed for low power  
application, and particularly well suited for battery  
back-up nonvolatile memory application.  
„ Tri-state output  
„ Data byte control : LB# (DQ0 ~ DQ7)  
UB# (DQ8 ~ DQ15)  
„ Data retention voltage : 2.0V (MIN.)  
„ Green package available  
„ Package : 44-pin 400 mil TSOP-II  
The LY6112816 operates from a single power  
supply of 5V and all inputs and outputs are fully TTL  
compatible  
PRODUCT FAMILY  
Power Dissipation  
Speed  
Product  
Family  
LY6112816  
LY6112816(E)  
LY6112816(I)  
LY6112816(LL)  
LY6112816(LLE)  
LY6112816(LLI)  
Operating  
Temperature  
0 ~ 70℃  
-20 ~ 80℃  
-40 ~ 85℃  
0 ~ 70℃  
Vcc  
Range  
Standby(ISB1)  
3mA(MAX.)  
3mA(MAX.)  
3mA(MAX.)  
100µA(MAX.)  
100µA(MAX.)  
100µA(MAX.)  
Operating(Icc)  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
4.5 ~ 5.5V  
15/20ns  
15/20ns  
15/20ns  
15/20ns  
15/20ns  
15/20ns  
140/110mA(MAX.)  
140/110mA(MAX.)  
140/110mA(MAX.)  
140/110mA(MAX.)  
140/110mA(MAX.)  
140/110mA(MAX.)  
-20 ~ 80℃  
-40 ~ 85℃  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
1
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
FUNCTIONAL BLOCK DIAGRAM  
PIN DESCRIPTION  
Vcc  
Vss  
SYMBOL  
DESCRIPTION  
A0 - A16  
Address Inputs  
128Kx16  
MEMORY ARRAY  
DQ0 – DQ15 Data Inputs/Outputs  
A0-A16  
DECODER  
CE#  
WE#  
OE#  
LB#  
UB#  
VCC  
Chip Enable Input  
Write Enable Input  
Output Enable Input  
Lower Byte Control  
Upper Byte Control  
Power Supply  
DQ0-DQ7  
Lower Byte  
I/O DATA  
CIRCUIT  
COLUMN I/O  
DQ8-DQ15  
Upper Byte  
VSS  
Ground  
CE#  
WE#  
OE#  
LB#  
CONTROL  
CIRCUIT  
UB#  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
2
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
PIN CONFIGURATION  
A4  
A3  
1
2
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
A6  
A2  
3
A7  
A1  
4
OE#  
UB#  
LB#  
DQ15  
DQ14  
DQ13  
DQ12  
Vss  
A0  
5
CE#  
DQ0  
DQ1  
DQ2  
DQ3  
Vcc  
Vss  
DQ4  
DQ5  
DQ6  
DQ7  
WE#  
A16  
A15  
A14  
A13  
A12  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Vcc  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
A8  
A9  
A10  
A11  
NC  
TSOP II  
ABSOLUTE MAXIMUN RATINGS*  
PARAMETER  
SYMBOL  
VT1  
RATING  
UNIT  
V
Voltage on VCC relative to VSS  
Voltage on any other pin relative to VSS  
-0.5 to 6.5  
-0.5 to VCC+0.5  
0 to 70(C grade)  
-20 to 80(E grade)  
-40 to 85(I grade)  
-65 to 150  
VT2  
V
℃
Operating Temperature  
TA  
℃
W
Storage Temperature  
Power Dissipation  
DC Output Current  
TSTG  
PD  
1
IOUT  
50  
mA  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
3
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
TRUTH TABLE  
I/O OPERATION  
MODE  
CE# OE# WE# LB# UB#  
SUPPLY CURRENT  
DQ0-DQ7  
High – Z  
High – Z  
High – Z  
DOUT  
High – Z  
DOUT  
DIN  
High – Z  
DIN  
DQ8-DQ15  
High – Z  
High – Z  
High – Z  
High – Z  
DOUT  
DOUT  
High – Z  
DIN  
Standby  
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
ISB1  
ICC  
Output Disable  
Read  
Write  
ICC  
L
L
ICC  
L
DIN  
Note: H = VIH, L = VIL, X = Don't care.  
DC ELECTRICAL CHARACTERISTICS  
SYMBOL  
TEST CONDITION  
MIN.  
4.5  
0.6*Vcc  
- 0.3  
- 1  
TYP. *4 MAX.  
UNIT  
PARAMETER  
Supply Voltage  
VCC  
5.0  
5.5  
VCC+0.3  
0.8  
V
V
V
*1  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output Leakage  
Current  
VIH  
VIL  
-
-
-
*2  
ILI  
V
V
CC ≧ VIN ≧ VSS  
CC ≧ VOUT ≧ VSS,  
Output Disabled  
1
A
µ
ILO  
- 1  
-
1
A
µ
Output High Voltage  
Output Low Voltage  
VOH IOH = -4mA  
2.4  
-
-
-
-
V
V
VOL  
IOL = 8mA  
0.4  
Cycle time = Min.  
CE# = VIL , II/O = 0mA  
Others at VIL or VIH  
CE# ≧VCC - 0.2V  
Others at 0.2V or VCC-0.2V  
15  
20  
-
-
100  
80  
140  
mA  
Average Operating  
Power supply Current  
ICC  
110  
mA  
mA  
A
µ
15/20  
15/20LL  
-
-
0.1  
20  
3*5  
Standby Power  
Supply Current  
Notes:  
ISB1  
100*6  
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.  
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.  
3. Over/Undershoot specifications are characterized, not 100% tested.  
4. Typical values are included for reference only and are not guaranteed or tested.  
℃
Typical valued are measured at VCC = VCC(TYP.) and TA = 25  
5. 1mA for special request  
6. 50 A for special request  
µ
CAPACITANCE (TA = 25℃, f = 1.0MHz)  
PARAMETER  
Input Capacitance  
Input/Output Capacitance  
SYMBOL  
MIN.  
-
-
MAX  
8
10  
UNIT  
pF  
pF  
CIN  
CI/O  
Note : These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
4
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
AC TEST CONDITIONS  
Input Pulse Levels  
0.2V to VCC - 0.2V  
Input Rise and Fall Times  
Input and Output Timing Reference Levels  
Output Load  
3ns  
1.5V  
CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA  
AC ELECTRICAL CHARACTERISTICS  
(1) READ CYCLE  
PARAMETER  
SYM.  
UNIT  
LY6112816-15  
LY6112816-20  
MIN. MAX.  
MIN.  
MAX.  
Read Cycle Time  
Address Access Time  
tRC  
tAA  
tACE  
tOE  
tCLZ  
15  
-
-
-
15  
15  
7
-
20  
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
20  
20  
8
Chip Enable Access Time  
Output Enable Access Time  
Chip Enable to Output in Low-Z  
Output Enable to Output in Low-Z tOLZ  
Chip Disable to Output in High-Z tCHZ  
Output Disable to Output in High-Z tOHZ  
Output Hold from Address Change tOH  
LB#, UB# Access Time  
LB#, UB# to High-Z Output  
LB#, UB# to Low-Z Output  
-
-
*
*
*
*
4
0
-
-
3
-
4
0
-
-
3
-
-
7
7
-
7
7
-
8
8
tBA  
tBHZ  
tBLZ  
8
8
*
*
-
4
-
4
(2) WRITE CYCLE  
PARAMETER  
SYM.  
UNIT  
LY6112816-15  
LY6112816-20  
MIN.  
15  
12  
12  
0
10  
0
8
0
4
-
12  
MAX.  
MIN.  
20  
16  
16  
0
11  
0
9
0
5
-
16  
MAX.  
Write Cycle Time  
tWC  
tAW  
tCW  
tAS  
tWP  
tWR  
tDW  
-
-
-
-
-
-
-
-
-
8
-
-
-
-
-
-
-
-
-
-
9
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Valid to End of Write  
Chip Enable to End of Write  
Address Set-up Time  
Write Pulse Width  
Write Recovery Time  
Data to Write Time Overlap  
Data Hold from End of Write Time tDH  
Output Active from End of Write  
Write to Output in High-Z  
tOW  
tWHZ  
tBW  
*
*
LB#, UB# Valid to End of Write  
*These parameters are guaranteed by device characterization, but not production tested.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
5
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
TIMING WAVEFORMS  
READ CYCLE 1 (Address Controlled) (1,2)  
tRC  
Address  
Dout  
tAA  
tOH  
Previous Data Valid  
Data Valid  
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)  
tRC  
Address  
tAA  
CE#  
tACE  
LB#,UB#  
tBA  
OE#  
tOE  
tOH  
tOHZ  
tBHZ  
tCHZ  
tOLZ  
tBLZ  
tCLZ  
High-Z  
Dout  
High-Z  
Data Valid  
Notes :  
1.WE#is high for read cycle.  
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.  
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.  
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
6
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)  
tWC  
Address  
tAW  
CE#  
tCW  
tBW  
tWP  
LB#,UB#  
tAS  
tWR  
WE#  
tWHZ  
TOW  
High-Z  
Dout  
Din  
(4)  
(4)  
tDW  
tDH  
Data Valid  
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)  
tWC  
Address  
tAW  
CE#  
tAS  
tWR  
tCW  
tBW  
LB#,UB#  
tWP  
WE#  
Dout  
Din  
tWHZ  
High-Z  
(4)  
tDW  
tDH  
Data Valid  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
7
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
WRITE CYCLE 3 (LB#,UB# Controlled)  
(1,2,5,6)  
tWC  
Address  
tAW  
tWR  
CE#  
tAS  
tCW  
tBW  
LB#,UB#  
WE#  
tWP  
tWHZ  
High-Z  
Dout  
Din  
(4)  
tDW  
tDH  
Data Valid  
Notes :  
1.WE#,CE#, LB#, UB# must be high during all address transitions.  
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.  
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be  
placed on the bus.  
4.During this period, I/O pins are in the output state, and input signals must not be applied.  
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance  
state.  
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
8
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
DATA RETENTION CHARACTERISTICS  
PARAMETER  
VCC for Data Retention  
SYMBOL  
TEST CONDITION  
CE# ≧ VCC - 0.2V  
VCC = 2.0V, CE# ≧ VCC - 0.2V  
other pins at 0.2V or VCC-0.2V  
See Data Retention  
MIN. TYP. MAX. UNIT  
VDR  
2.0  
-
-
-
5.5  
2
50  
V
mA  
A
µ
15/20  
15/20LL  
0.05  
10  
Data Retention Current  
IDR  
Chip Disable to Data  
Retention Time  
Recovery Time  
tCDR  
tR  
0
-
-
-
-
ns  
ns  
Waveforms (below)  
tRC  
*
tRC = Read Cycle Time  
*
DATA RETENTION WAVEFORM  
VDR ≧ 2.0V  
Vcc(min.)  
Vcc  
Vcc(min.)  
tCDR  
tR  
VIH  
CE# ≧ Vcc-0.2V  
VIH  
CE#  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
9
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
PACKAGE OUTLINE DIMENSION  
Ⅱ
44-pin 400mil TSOP-  
Package Outline Dimension  
DIMENSIONS IN MILLMETERS  
DIMENSIONS IN MILS  
SYMBOLS  
MIN.  
-
NOM.  
-
MAX.  
1.20  
0.15  
1.05  
0.45  
0.21  
18.618  
12.014  
10.363  
-
MIN.  
NOM.  
-
MAX.  
A
A1  
A2  
b
-
47.2  
5.9  
41.3  
17.7  
8.3  
733  
473  
408  
-
0.05  
0.95  
0.30  
0.12  
18.212  
11.506  
9.957  
-
0.10  
1.00  
-
2.0  
37.4  
11.8  
4.7  
717  
453  
392  
-
3.9  
39.4  
-
c
-
-
D
18.415  
11.760  
10.160  
0.800  
0.50  
0.805  
-
725  
463  
400  
31.5  
19.7  
31.7  
-
E
E1  
e
L
0.40  
-
0.60  
-
15.7  
-
23.6  
-
ZD  
y
-
0o  
0.076  
6o  
-
0o  
3
6o  
3o  
3o  
Θ
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
10  
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
ORDERING INFORMATION  
LY6112816 U V - WW XX Y Z  
Z : Packing Type  
Blank : Tube or Tray  
Tray : 44-pin 400 mil TSOP-II  
T : Tape Reel  
Y : Temperature Range  
Blank : (Commercial) 0°C ~ 70°C  
E : (Extended) -20°C ~ +80°C  
I : (Industrial) -40°C ~ +85°C  
XX : Power Type  
WW : Access Time(Speed)  
LL : Ultra Low Power  
L : Green Package  
M : 44-pin 400 mil TSOP-II  
V : Lead Information  
U : Package Type  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
11  
®
LY6112816  
5V 128K X 16 BIT HIGH SPEED CMOS SRAM  
Rev. 1.2  
THIS PAGE IS LEFT BLANK INTENTIONALLY.  
Lyontek Inc. reserves the rights to change the specifications and products without notice.  
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.  
TEL: 886-3-6668838  
FAX: 886-3-6668836  
12  
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 		LY611024JL 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024JL-12I [ 暂无描述 ] 13 页

LYONTEK

 		LY611024JL-12LL 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

LYONTEK

 		LY611024JL-12LLE 128K ×8位高速CMOS SRAM[ 128K X 8 BIT HIGH SPEED CMOS SRAM ] 13 页

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