®
LY616416
5V 64K X 16 BIT HIGH SPEED CMOS SRAM
Rev. 1.2
AC TEST CONDITIONS
Input Pulse Levels
0.2V to VCC - 0.2V
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -8mA/16mA
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
SYM.
UNIT
LY616416-15
MIN. MAX.
15
LY616416-20
MIN. MAX.
Read Cycle Time
Address Access Time
tRC
tAA
-
20
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
-
4
0
-
-
3
-
15
15
7
-
20
20
8
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z tOLZ
Chip Disable to Output in High-Z tCHZ
Output Disable to Output in High-Z tOHZ
Output Hold from Address Change tOH
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
tACE
tOE
tCLZ
-
*
*
*
*
4
0
-
-
7
7
-
7
7
-
8
8
-
3
-
-
tBA
8
8
tBHZ
*
-
4
tBLZ
*
4
(2) WRITE CYCLE
PARAMETER
SYM.
UNIT
LY616416-15
MIN. MAX.
15
LY616416-20
MIN. MAX.
20
Write Cycle Time
tWC
tAW
tCW
tAS
tWP
tWR
tDW
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time tDH
Output Active from End of Write
Write to Output in High-Z
12
12
0
-
-
-
16
16
0
-
-
-
10
0
-
-
11
0
-
-
8
-
9
-
0
-
0
-
tOW
*
4
-
5
-
tWHZ
*
-
8
-
16
9
-
LB#, UB# Valid to End of Write
tBW
12
-
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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