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IXA37IF1200HJ

型号：

IXA37IF1200HJ

描述：

不间断电源[ Uninterruptible power supply ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

150 K

下载PDF手册
IXA37IF1200HJ  
IC25  
VCES  
VCE(sat)typ  
=
=
=
58 A  
XPT IGBT  
V
V
1200  
1.8  
Copack  
C (2)  
Part number  
IXA37IF1200HJ  
(G) 1  
E (3)  
Features / Advantages:  
Applications:  
Package:  
● Housing: ISOPLUS247  
● Easy paralleling due to the positive temperature  
coefficient of the on-state voltage  
● Rugged XPT design (Xtreme light Punch Through)  
results in:  
- short circuit rated for 10 µsec.  
- very low gate charge  
● AC motor drives  
● Solar inverter  
● Medical equipment  
● Uninterruptible power supply  
● Air-conditioning systems  
● Welding equipment  
● Switched-mode and resonant-mode  
power supplies  
●rIndustry standard outline  
●rDCB isolated backside  
●rIsolation Voltage 3000 V  
●rEpoxy meets UL 94V-0  
●rRoHS compliant  
- low EMI  
- square RBSOA @ 3x Ic  
● Thin wafer technology combined with the XPT design  
results in a competitive low VCE(sat)  
● SONIC™ diode  
● Inductive heating, cookers  
- fast and soft reverse recovery  
- low operating forward voltage  
IGBT  
R a t i n g s  
Conditions  
Symbol  
VCES  
VGES  
IC25  
Definition  
min. typ. max. Unit  
VGE = 0 V  
TVJ = 25°C  
TVJ = 25°C  
TC = 25°C  
TC = 90°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C  
1200  
±20  
58  
V
V
Collector emitter voltage  
Maximum DC gate voltage  
Collector current  
A
IC90  
37  
A
Ptot  
195  
W
Total power dissipation  
ICES  
VCE = VCES ; V = 0 V  
0.1 mA  
mA  
Collector emitter leakage current  
GE  
0.1  
IGES  
VCE = 0 V; VGE = ±20 V  
500  
2.1  
nA  
V
Gate emitter leakage current  
VCE(sat)  
35  
15  
1.8  
2.1  
6
IC =  
A; VGE =  
V
TVJ = 25°C  
TVJ = 125°C  
Collector emitter saturation voltage  
V
VGE(th)  
QGon  
td(on)  
t r  
5.4  
6.5  
V
IC = 1.5 mA; VGE = VCE  
Gate emitter threshold voltage  
Total gate charge  
VCE = 600 V; VGE = 15 V; IC = 35 A  
106  
70  
nC  
ns  
ns  
ns  
ns  
mJ  
mJ  
A
Turn-on delay time  
Current rise time  
40  
Turn-off delay time  
Current fall time  
td(off)  
t f  
Inductive load  
250  
100  
3.8  
4.1  
VCE = 600 V; IC = 35 A  
Turn-on energy per pulse  
Turn-off energy per pulse  
TVJ = 125°C  
TVJ = 125°C  
Eon  
VGE = ±15 V; R = 27  
Ω
G
Eoff  
RBSOA  
105  
VGE  
=
15 V;  
RG = 27  
Ω
Reverse bias safe operation area  
VCEK = 1200 V  
Short circuit safe operation area  
Short circuit duration  
SCSOA  
tSC  
VCE = 900 V; VGE= ±15 V  
TVJ = 125°C  
10  
µs  
A
ISC  
RG = 27 ; non-repetitive  
140  
Short circuit current  
Ω
Thermal resistance juntion to case  
RthJC  
0.64 K/W  
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
IXA37IF1200HJ  
Diode  
Ratings  
Symbol  
IF25  
Definition  
Conditions  
TC = 25°C  
TC = 90°C  
IF = 30 A  
min. typ. max. Unit  
Forward current  
42  
25  
A
A
IF90  
Forward voltage  
VF  
TVJ = 25°C  
1.95  
1.95  
3.5  
2.2  
V
TVJ = 125 °C  
V
Reverse recovery charge  
Qrr  
µC  
A
VR = 600 V  
Maximum reverse recovery current  
Reverse recovery time  
IRM  
30  
diF /dt = - 600 A/µs;  
IF = 30 A  
TVJ = 125 °C  
trr  
350  
0.9  
ns  
mJ  
Reverse recovery losses at turn-off  
Thermal resistance juntion to case  
Erec(off)  
R
thJC  
1.2 K/W  
Equivalent Circuits for Simulation  
I
R0  
V0  
Ratings  
Symbol  
Definition  
min. typ. max. Unit  
V0  
R0  
V0  
R0  
1.1  
39  
V
Ω
V
IGBT  
TVJ = 150 °C  
TVJ = 150 °C  
m
m
1.25  
28.3  
Diode  
Ω
R1  
R2  
R3  
R4  
C1  
C2  
C3  
C4  
IGBT  
0.152  
0.0724  
0.3078  
0.1078  
0.0025  
0.03  
Diode  
R1  
R2  
R3  
R4  
0.3413  
0.2171  
0.3475  
0.2941  
0.0025  
0.03  
1
τ
2
τ
0.03  
0.03  
3
τ
0.08  
0.08  
4
τ
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
IXA37IF1200HJ  
Package ISOPLUS247  
Ratings  
Symbol  
TVJ  
Definition  
Conditions  
min. typ. max. Unit  
Virtual junction temperature  
Storage temperature  
-55  
-55  
150  
150  
°C  
°C  
Tstg  
RthCH  
0.25  
6
K/W  
g
Thermal resistance case to heatsink  
Weight  
Mounting force with clip  
Isolation voltage  
FC  
20  
3600  
3000  
120  
N
V
t = 1 second  
t = 1 minute  
V
ISOL  
V
Creapage distance on surface  
Striking distance through air  
dS  
dA  
mm  
mm  
Product Marking  
Part number  
I = IGBT  
X = XPT IGBT  
A = Gen 1 / std  
37 = Current Rating [A]  
IF = Copack  
Logo  
IXYS  
Part No.  
Date Code  
1200 = Reverse Voltage [V]  
HJ = ISOPLUS247 (3)  
abcd  
UL listed  
Order Code  
Ordering  
Standard  
Part Name  
Marking on Product  
IXA37IF1200HJ  
Delivering Mode Base Qty Code Key  
IXA 37 IF 1200 HJ  
Tube  
30  
507993  
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
IXA37IF1200HJ  
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-f-  
oberfläche der Bauteilunterseite  
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of  
device bottom side  
Die Gehäuseabmessungen entsprechen demTyp TO-247 AD gemäß JEDEC  
außer Schraubloch und Lmax  
This drawing will meet all dimensions requiarement of JEDEC outlineTO-247 AD  
except screw hole and except Lmax  
.
.
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
IXA37IF1200HJ  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15 V  
13 V  
VGE = 15 V  
17 V  
11 V  
19 V  
TVJ = 25°C  
IC  
TVJ = 125°C  
IC  
[A]  
[A]  
TVJ = 125°C  
9 V  
0
1
2
3
0
1
2
3
4
5
VCE [V]  
VCE [V]  
Fig. 1 Typ. output characteristics  
Fig. 2 Typ. output characteristics  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
IC  
= 35 A  
VCE = 600 V  
IC  
VGE  
[A]  
[V]  
TVJ = 125°C  
TVJ = 25°C  
0
0
20 40 60 80 100 120 140  
5
6
7
8
9
10 11 12 13  
QG [nC]  
VGE [V]  
Fig. 3 Typ. tranfer characteristics  
Fig. 4 Typ. turn-on gate charge  
10  
8
6
5
4
3
Eon  
IC  
VCE = 600 V  
VGE 15 V  
TVJ = 125°C  
=
35 A  
RG  
VCE = 600 V  
VGE 15 V  
=
27  
=
=
Eon  
TVJ = 125°C  
Eoff  
6
E
E
[mJ]  
[mJ]  
4
2
0
Eoff  
0
20  
40  
IC [A]  
60  
80  
20  
40  
60  
80  
RG [ ]  
Fig. 5 Typ. switching energy vs. collector current  
Fig. 6 Typ. switching energy vs. gate resistance  
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
IXA37IF1200HJ  
60  
50  
40  
30  
20  
10  
0
7
6
5
4
3
2
1
TVJ = 125°C  
VR = 600 V  
60 A  
IF  
Qrr  
30 A  
15 A  
[A]  
[µC]  
TVJ = 125°C  
TVJ  
=
25°C  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
300 400 500 600 700 800 900 1000 1100  
VF [V]  
diF /dt [A/µs]  
Fig. 7 Typ. Forward current versus VF  
Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt  
70  
60  
50  
40  
30  
20  
10  
0
700  
600  
TVJ = 125°C  
VR = 600 V  
TVJ = 125°C  
VR = 600 V  
60 A  
500  
400  
300  
200  
100  
0
30 A  
15 A  
IRR  
trr  
[A]  
[ns]  
60 A  
30 A  
15 A  
300 400 500 600 700 800 900 1000 1100  
300 400 500 600 700 800 900 1000 1100  
diF /dt [A/µs]  
diF /dt [A/µs]  
Fig. 9 Typ. peak reverse current IRM vs. di/dt  
Fig. 10 Typ. recovery time trr versus di/dt  
10  
2.0  
TVJ = 125°C  
VR = 600 V  
1.6  
1.2  
0.8  
0.4  
0.0  
60 A  
30 A  
Diode  
1
Erec  
IGBT  
ZthJC  
[K/W]  
[mJ]  
15 A  
0.1  
0.01  
0.001  
0.01  
0.1  
1
10  
300 400 500 600 700 800 900 1000 1100  
diF /dt [A/µs]  
tp [s]  
Fig. 5 Typ. recovery energy Erec versus di/dt  
Fig. 12 Typ. transient thermal impedance  
IXYS reserves the right to change limits, conditions and dimensions.  
20100623c  
Data according to IEC 60747and per diode unless otherwise specified  
© 2010 IXYS all rights reserved  
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