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XTR117AIDGKR

型号:

XTR117AIDGKR

描述:

4-20mA电流环路发射器[ 4-20mA Current-Loop Transmitter ]

品牌:

TI[ TEXAS INSTRUMENTS ]

页数:

11 页

PDF大小:

187 K

XTR117  
SBOS344 − SEPTEMBER 2005  
4-20mA Current-Loop Transmitter  
FD EATURES  
DESCRIPTION  
LOW QUIESCENT CURRENT: 130µA  
5V REGULATOR FOR EXTERNAL CIRCUITS  
LOW SPAN ERROR: 0.05%  
The XTR117 is a precision current output converter designed  
to transmit analog 4-20mA signals over an industry- standard  
current loop. It provides accurate current scaling and output  
current limit functions.  
D
D
D
D
D
LOW NONLINEARITY ERROR: 0.003%  
WIDE-LOOP SUPPLY RANGE: 7.5V to 40V  
MSOP-8 PACKAGE  
The on-chip voltage regulator (5V) can be used to power  
external circuitry. A current return pin (IRET) senses any  
current used in external circuitry to assure an accurate  
control of the output current.  
AD PPLICATIONS  
The XTR117 is a fundamental building block of smart  
sensors using 4-20mA current transmission. The XTR117 is  
specified for operation over the extended industrial  
temperature range, −40°C to +125°C.  
2-WIRE, 4-20mA CURRENT LOOP  
TRANSMITTER  
D
D
D
D
D
SMART TRANSMITTER  
INDUSTRIAL PROCESS CONTROL  
TEST SYSTEMS  
CURRENT AMPLIFIER  
VOLTAGE-TO-CURRENT AMPLIFIER  
RELATED 4-20mA PRODUCTS  
XTR115  
XTR116  
5V regulator output and 2.5V reference output  
5V regulator output and 4.096V reference output  
:
NOTE For 4-20mA complete bridge and RTO conditioner solutions,  
see the XTR product family at www.ti.com.  
XTR117  
IO  
VREG  
V+  
+5V  
Regulator  
8
7
B
Q1  
6
RIN  
IIN  
VLOOP  
2
A1  
E
VIN  
5
RL  
RLIM  
IRET  
IO = 100 VIN  
RIN  
3
R1  
2.475k  
R2  
25  
4
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments  
semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
ꢀꢁ ꢂ ꢃꢄ ꢅ ꢆꢇ ꢂꢈ ꢃ ꢉꢆꢉ ꢊꢋ ꢌꢍ ꢎ ꢏꢐ ꢑꢊꢍꢋ ꢊꢒ ꢓꢔ ꢎ ꢎ ꢕꢋꢑ ꢐꢒ ꢍꢌ ꢖꢔꢗ ꢘꢊꢓ ꢐꢑꢊ ꢍꢋ ꢙꢐ ꢑꢕꢚ ꢀꢎ ꢍꢙꢔ ꢓꢑꢒ  
ꢓ ꢍꢋ ꢌꢍꢎ ꢏ ꢑꢍ ꢒ ꢖꢕ ꢓ ꢊ ꢌꢊ ꢓ ꢐ ꢑꢊ ꢍꢋꢒ ꢖ ꢕꢎ ꢑꢛꢕ ꢑꢕ ꢎ ꢏꢒ ꢍꢌ ꢆꢕꢜ ꢐꢒ ꢇꢋꢒ ꢑꢎ ꢔꢏ ꢕꢋꢑ ꢒ ꢒꢑ ꢐꢋꢙ ꢐꢎ ꢙ ꢝ ꢐꢎ ꢎ ꢐ ꢋꢑꢞꢚ  
ꢀꢎ ꢍ ꢙꢔꢓ ꢑ ꢊꢍ ꢋ ꢖꢎ ꢍ ꢓ ꢕ ꢒ ꢒ ꢊꢋ ꢟ ꢙꢍ ꢕ ꢒ ꢋꢍꢑ ꢋꢕ ꢓꢕ ꢒꢒ ꢐꢎ ꢊꢘ ꢞ ꢊꢋꢓ ꢘꢔꢙ ꢕ ꢑꢕ ꢒꢑꢊ ꢋꢟ ꢍꢌ ꢐꢘ ꢘ ꢖꢐ ꢎ ꢐꢏ ꢕꢑꢕ ꢎ ꢒꢚ  
Copyright 2005, Texas Instruments Incorporated  
www.ti.com  
ꢠꢆ ꢁ ꢡꢡꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
(1)  
ELECTROSTATIC DISCHARGE SENSITIVITY  
ABSOLUTE MAXIMUM RATINGS  
Power Supply, V+ (referenced to I pin) . . . . . . . . . . . . . . . . +50V  
O
This integrated circuit can be damaged by ESD. Texas  
Instruments recommends that all integrated circuits be  
handledwith appropriate precautions. Failure to observe  
Input Voltage, (referenced to I  
pin) . . . . . . . . . . . . . . . 0V to V+  
RET  
Output Current Limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous  
, Short-Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous  
V
REG  
proper handling and installation procedures can cause damage.  
Operating Temperature Range . . . . . . . . . . . . . . . −55°C to +125°C  
Storage Temperature Range . . . . . . . . . . . . . . . . . −55°C to +125°C  
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +165°C  
ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . . 2000V  
(Charged Device Model) . . . . . . . . . . . . . . . . . 1000V  
ESD damage can range from subtle performance degradation to  
complete device failure. Precision integrated circuits may be more  
susceptible to damage because very small parametric changes could  
cause the device not to meet its published specifications.  
(1)  
Stresses above these ratings may cause permanent damage.  
Exposure to absolute maximum conditions for extended periods  
may degrade device reliability. These are stress ratings only, and  
functional operation of the device at these or any other conditions  
beyond those specified is not implied.  
(1)  
PACKAGE/ORDERING INFORMATION  
PACKAGE  
DESIGNATOR  
PACKAGE  
MARKING  
TRANSPORT MEDIA,  
QUANTITY  
PRODUCT  
PACKAGE-LEAD  
ORDERING NUMBER  
XTR117AIDGKT  
XTR117AIDGKR  
XTR117AIDRBT  
XTR117AIDRBR  
Tape and Reel, 250  
Tape and Reel, 2500  
Tape and Reel, 250  
Tape and Reel, 3000  
XTR117  
MSOP-8  
DGK  
DRB  
BOZ  
BOY  
(2)  
XTR117  
DFN-8  
(1)  
(2)  
For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.  
Available Q1 2006.  
PIN ASSIGNMENTS  
Top View  
XTR117  
XTR117  
NC(1)  
IIN  
VREG  
NC(1)  
IIN  
1
2
3
4
8
7
6
5
VREG  
1
2
3
4
8
7
6
5
Exposed  
Thermal  
Die Pad  
on  
V+  
V+  
IRET  
IO  
B (Base)  
E (Emitter)  
IRET  
IO  
B (Base)  
E (Emitter)  
Underside(2)  
MSOP−8  
DFN−8(3)  
NOTES: (1) NC = No connection. Leave unconnected on PCB.  
(2) Connect thermal die pad to V .  
(3) Available Q1 2006.  
2
www.ti.com  
SBOS344 − SEPTEMBER 2005  
ELECTRICAL CHARACTERISTICS: V+ = +24V  
Boldface limits apply over the temperature range, TA = −40°C to +125°C.  
All specifications at TA = +25°C, V+ = 24V, RIN = 20k, and TIP29C external transistor, unless otherwise noted.  
XTR117  
TYP  
MIN  
MAX  
PARAMETER  
CONDITION  
UNITS  
OUTPUT  
Output Current Equation  
Output Current, Linear Range  
Over-Scale Limit  
I
I
= I x 100  
O
IN  
O
0.20  
25  
mA  
mA  
mA  
I
32  
LIM  
Under-Scale Limit  
I
I
= 0  
0.13  
0.20  
MIN  
REG  
SPAN  
Span (Current Gain)  
S
100  
0.05  
+ 3  
A/A  
%
(1)  
Error  
I
= 200µA to 25mA  
= −40°C to +125°C  
= 200µA to 25mA  
0.4  
+ 20  
0.02  
O
vs Temperature  
T
ppm/°C  
%
A
Nonlinearity  
I
O
0.003  
INPUT  
Offset Voltage (Op Amp)  
vs Temperature  
vs Supply Voltage, V+  
Bias Current  
V
I
= 40µA  
100  
+ 0.7  
+0.1  
−35  
150  
0.6  
500  
+ 6  
µV  
mV/°C  
µV/V  
nA  
OS  
IN  
T
= −40°C to +125°C  
V+ = 7.5V to 40V  
A
+2  
I
B
vs Temperature  
Noise: 0.1Hz to 10Hz  
T
A
= −40°C to +125°C  
pA/°C  
e
n
µV  
PP  
DYNAMIC RESPONSE  
Small-Signal Bandwidth  
Slew Rate  
C
LOOP  
= 0, R = 0  
380  
3.2  
kHz  
L
mA/µs  
(2)  
V
REG  
Voltage  
5
V
V
Voltage Accuracy  
vs Temperature  
vs Supply Voltage, V+  
vs Output Current  
Short-Circuit Current  
I
= 0  
0.05  
+ 0.1  
1
0.1  
REG  
T
A
= −40°C to +125°C  
V+ = 7.5V to 40V  
mV/°C  
mV/V  
See Typical Characteristics  
12  
mA  
POWER SUPPLY  
Specified Voltage Range  
Operating Voltage Range  
Quiescent Current  
V+  
+24  
V
V
+7.5  
+40  
I
Q
130  
200  
µA  
mA  
Over Temperature  
T
A
= −40°C to +125°C  
250  
TEMPERATURE RANGE  
Specified Range  
Operating Range  
Storage Range  
Thermal Resistance  
MSOP  
−40  
−55  
−55  
+125  
+125  
+150  
°C  
°C  
°C  
q
JA  
150  
53  
°C/W  
°C/W  
DFN  
(1)  
(2)  
Does not include initial error or temperature coefficient of R  
.
IN  
Voltage measured with respect to I  
pin.  
RET  
3
ꢠꢆ ꢁ ꢡꢡꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
TYPICAL CHARACTERISTICS: V+ = +2.7V to +5.5V  
At T = +25°C, V+ = 24V, R = 20k, and TIP29C external transistor, unless otherwise noted.  
A
IN  
QUIESCENT CURRENT vs TEMPERATURE  
CURRENT GAIN vs FREQUENCY  
45  
40  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
V+ = 36V  
COUT = 0  
30  
20  
10  
RL = 0  
V+ = 24V  
COUT = 10nF  
RL = 250  
V+ = 7.5V  
80  
10k  
100k  
Frequency (Hz)  
1M  
25  
75  
50  
0
25  
50  
75  
100  
125  
_
Temperature ( C)  
VREG VOLTAGE vs VREG CURRENT  
OVERSCALE CURRENT vs TEMPERATURE  
With External Transistor  
5.5  
5.0  
4.5  
34  
33  
32  
31  
30  
29  
28  
_
+125 C  
_
55 C  
V+ = 36V  
V+ = 7.5V  
V+ = 24V  
_
55 C  
_
+25 C  
_
+25 C  
Sinking  
Current  
Sourcing  
Current  
_
+125 C  
1
0
1
2
3
4
25  
75  
50  
0
25  
50  
75  
100  
125  
IREG Current (mA)  
_
Temperature ( C)  
OFFSET VOLTAGE DISTRIBUTION  
SPAN ERROR vs TEMPERATURE  
50  
40  
30  
20  
10  
0
10  
20  
30  
40  
50  
25  
75  
50  
0
25  
50  
75  
100  
125  
_
µ
Temperature ( C)  
Offset Voltage ( V)  
4
ꢠ ꢆꢁꢡꢡ ꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
EXTERNAL TRANSISTOR  
APPLICATIONS INFORMATION  
BASIC OPERATION  
The external transistor, Q , conducts the majority of the  
1
full-scale output current. Power dissipation in this  
transistor can approach 0.8W with high loop voltage  
(40V) and 20mA output current. The XTR117 is  
designed to use an external transistor to avoid on-chip,  
thermal-induced errors. Heat produced by Q will still  
cause ambient temperature changes that can influence  
the XTR117 performance. To minimize these effects,  
The XTR117 is a precision current output converter  
designed to transmit analog 4-20mA signals over an  
industry-standard current loop. Figure 1 shows basic  
circuit connections with representative simplified input  
circuitry. The XTR117 is a two-wire current transmitter.  
Its input current (pin 2) controls the output current. A  
portion of the output current flows into the V+ power  
1
locate Q away from sensitive analog circuitry, including  
1
supply, pin 7. The remaining current flows in Q .  
1
XTR117. Mount Q so that heat is conducted to the  
1
External input circuitry connected to the XTR117 can be  
outside of the transducer housing.  
powered from V  
. Current drawn from these  
REG  
The XTR117 is designed to use virtually any NPN  
transistor with sufficient voltage, current and power  
rating. Case style and thermal mounting considerations  
often influence the choice for any given application.  
Several possible choices are listed in Figure 1. A  
MOSFET transistor will not improve the accuracy of the  
XTR117 and is not recommended.  
terminals must be returned to I , pin 3. The I  
pin is  
RET  
RET  
a local ground for input circuitry driving the XTR117.  
The XTR117 is a current-input device with a gain of 100.  
A current flowing into pin 2 produces I = 100 x I . The  
O
IN  
input voltage at the I pin is zero (referred to the I  
IN  
RET  
pin). A voltage input is converted to an input current with  
an external input resistor, R , as shown in Figure 1.  
IN  
Typical full-scale input voltages range from 1V and  
upward. Full-scale inputs greater than 0.5V are  
recommend to minimize the effects of offset voltage and  
drift of A1.  
For improved precision use an external  
voltage reference.  
Possible choices for Q1 (see text):  
DEVICE  
VOLTAGE  
TYPE  
PACKAGE  
REF3140  
REF3130  
REF3125  
4.096V  
3.0V  
2.5V  
MJE3440  
TIP41C  
MJD3340  
SOT−32  
TO−220  
D−PAK  
Use REF32xx for lower drift.  
IREG  
XTR117  
IO  
(VREF  
)
VREG  
8
5V  
V+  
+5V  
Regulator  
7
B
6
Q1  
RIN  
VLOOP  
IIN  
20k  
VIN  
IIN  
2
Input  
Circuitry  
COUT  
10nF  
A1  
E
5
RL  
RLIM  
IRET  
3
R1  
2.475k  
R2  
25  
from IREG and IREF  
All return current  
IO  
4
I = 100 (IIN  
)
Figure 1. Basic Circuit Connections  
5
ꢠꢆ ꢁ ꢡꢡꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
MINIMUM OUTPUT CURRENT  
MAXIMUM OUTPUT CURRENT  
The quiescent current of the XTR117 (typically 130µA)  
The XTR117 provides accurate, linear output up to  
25mA. Internal circuitry limits the output current to  
approximately 32mA to protect the transmitter and loop  
power/measurement circuitry.  
is the lower limit of its output current. Zero input current  
(I = 0) will produce an I equal to the quiescent current.  
IN  
O
Output current will not begin to increase until  
> I /100. Current drawn from V will be added to  
I
IN  
Q
REG  
It is possible to extend the output current range of the  
XTR117 by connecting an external resistor from pin 3  
to pin 5, to change the current limit value. Since all  
output current must flow through internal resistors, it is  
possible to cause internal damage with excessive  
current. Output currents greater than 45mA may cause  
permanent damage.  
this minimum output current. Up to 3.8mA is available  
to power external circuitry while still allowing the output  
current to go below 4mA.  
OFFSETTING THE INPUT  
A low-scale output of 4mA is produced by creating a  
40µA input current. This input current can be created  
with the proper value resistor from an external  
REVERSE-VOLTAGE PROTECTION  
reference voltage (V  
) as shown in Figure 2. V  
REF  
REG  
The XTR117 low compliance voltage rating (minimum  
operating voltage) of 7.5V permits the use of various  
voltage protection methods without compromising  
operating range. Figure 3 shows a diode bridge circuit  
which allows normal operation even when the voltage  
connection lines are reversed. The bridge causes a two  
diode drop (approximately 1.4V) loss in loop supply  
voltage. This voltage drop results in a compliance  
voltage of approximately 9V—satisfactory for most  
applications. A diode can be inserted in series with the  
loop supply voltage and the V+ pin to protect against  
reverse output connection lines with only a 0.7V loss in  
loop supply voltage.  
can be used as shown in Figure 2 but will not have the  
temperature stability of a high quality reference such as  
the REF3125.  
XTR117  
VREG  
8
VREF (2.5V) or  
...................  
R
62.5kIN  
40 A  
µ
IIN  
2
A1  
0 to 160 A  
µ
IRET  
3
R1  
2.475k  
Figure 2. Creating Low-Scale Offset  
XTR117  
VREG  
V+  
7
+5V  
Regulator  
8
Maximum VPS must be less  
than minimum voltage rating  
of the zener diode.  
B
6
Q1  
RIN  
IIN  
2
A1  
(1)  
µ
0.01  
F
D1  
IN4148  
E
5
VIN  
RLIM  
VLOOP  
RL  
IRET  
3
IO = 100 VIN  
RIN  
R1  
2.475k  
R2  
25  
The diode bridge causes a  
1.4V loss in loop supply voltage.  
See Reverse−Voltage Protection.  
4
NOTE: (1) Some examples of zener diodes include: P6KE51 or 1N4755A. Use lower  
voltage zener diodes with loop power−supply voltages < 30V for increased protection. See  
Over−voltage Surge Protection.  
Figure 3. Reverse Voltage Operation and Over-Voltage Surge Protection  
6
ꢠ ꢆꢁꢡꢡ ꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
protection diode is used, a series diode or diode bridge  
should be used for protection against reversed  
connections.  
OVER-VOLTAGE SURGE PROTECTION  
Remote connections to current transmitters can  
sometimes be subjected to voltage surges. It is prudent  
to limit the maximum surge voltage applied to the  
XTR117 to as low as practical. Various zener diode and  
surge clamping diodes are specially designed for this  
purpose. Select a clamp diode with as low a voltage  
rating as possible for best protection. Absolute  
maximum power-supply rating on the XTR117 is  
specified at +50V. Keep overvoltages and transients  
below +50V to ensure reliable operation when the  
supply returns to normal (7.5V to 40V).  
RADIO FREQUENCY INTERFERENCE  
The long wire lengths of current loops invite radio  
frequency (RF) interference. RF interference can be  
rectified by the input circuitry of the XTR117 or  
preceding circuitry. This effect generally appears as an  
unstable output current that varies with the position of  
loop supply or input wiring. Interference may also enter  
at the input terminals. For integrated transmitter  
assemblies with short connections to the sensor, the  
interference more likely comes from the current loop  
connections.  
Most surge protection zener diodes have a diode  
characteristic in the forward direction that will conduct  
excessive current, possibly damaging receiving-side  
circuitry if the loop connections are reversed. If a surge  
XTR117  
VREG  
8
RIN  
IIN  
2
VO  
D/A  
IRET  
3
XTR117  
VREG  
8
IIN  
2
IO  
D/A  
Digital  
Control  
Optical  
Isolation  
IRET  
3
VREG XTR117  
8
RFILTER  
RIN  
IIN  
2
PWM  
Out  
Digital  
Control  
µ
C
Optical  
Isolation  
CFILTER  
IRET  
3
Figure 4. Digital Control Methods  
7
ꢠꢆ ꢁ ꢡꢡꢢ  
www.ti.com  
SBOS344 − SEPTEMBER 2005  
VS  
2.5V  
Nonlinear  
Bridge  
Transducer  
Ref  
Linearization  
Circuit  
P
XTR117  
PGA309  
IO  
VREG  
+5V  
Regulator  
V+  
7
psi  
0
50  
Lin DAC  
8
Analog Sensor Linearization  
B
6
Q1  
ROS  
RIN  
125k  
25k  
IIN  
Fault  
Monitor  
Linear  
VOUT  
VLOO P  
Over/Under  
Scale Limiter  
Auto−Zero  
PGA  
(1)  
2
A1  
E
5
Analog Signal Conditioning  
+125_C  
40_C  
RL  
RLIM  
IRET  
3
Digital  
Temperature  
Compensation  
Int Temp  
T
IO = 100VIN  
RIN  
R2  
25Ω  
R1  
2.475k  
Temp  
ADC  
Control Register  
Interface Circuitry  
Ext Temp  
Ext Temp  
4
EEPROM  
(SOT23−5)  
Digital Calibration  
NOTE: (1) PGA309 VOUT: 0.5V to 4.5V.  
Figure 5. Complete 4-20mA Pressure Transducer Solution with PGA309 and XTR117  
8
PACKAGE OPTION ADDENDUM  
www.ti.com  
17-Oct-2005  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
MSOP  
MSOP  
Drawing  
XTR117AIDGKR  
XTR117AIDGKT  
ACTIVE  
ACTIVE  
DGK  
8
8
2500  
250  
TBD  
TBD  
Call TI  
Call TI  
Call TI  
Call TI  
DGK  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan  
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS  
&
no Sb/Br)  
-
please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
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厂商 型号 描述 页数 下载

ETC

XTR100 [ ] 12 页

BB

XTR100AM [ Instrumentation Amplifier, 1 Func, 50uV Offset-Max, MDIP14, ] 12 页

BB

XTR100AP [ Instrumentation Amplifier, 1 Func, 50uV Offset-Max, PDIP14, ] 12 页

BB

XTR100BM [ Instrumentation Amplifier, 1 Func, 25uV Offset-Max, MDIP14, ] 12 页

BB

XTR100BP [ Instrumentation Amplifier, 1 Func, 25uV Offset-Max, PDIP14, ] 12 页

BB

XTR101 高精度,低漂移的4-20mA两线制变送器[ Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER ] 15 页

TI

XTR101 高精度,低漂移的4-20mA两线制变送器[ Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER ] 25 页

BB

XTR101AG 高精度,低漂移的4-20mA两线制变送器[ Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER ] 15 页

TI

XTR101AG 高精度,低漂移的4-20mA两线制变送器[ Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER ] 25 页

BB

XTR101AG-BI [ Instrumentation Amplifier, 1 Func, 60uV Offset-Max, CDIP14, ] 13 页

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