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IXFC52N30P_08

型号：

IXFC52N30P_08

描述：

PolarHT功率MOSFET HiPerFET[ PolarHT Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

151 K

下载PDF手册
PolarHTTM Power  
VDSS = 300V  
ID25 = 24A  
RDS(on) ≤ 75mΩ  
IXFC52N30P  
MOSFET HiPerFETTM  
trr  
≤ 200ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
ISOPLUS 220TM  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
24  
A
A
Isolated Tab  
D = Drain  
150  
G = Gate  
S = Source  
IA  
TC = 25°C  
TC = 25°C  
52  
1
A
J
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
100  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
ꢀUL recognized package  
ꢀSilicon chip on Direct-Copper-Bond  
substrate  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Avanlache rated  
Fast intrinsic diode  
VISOL  
50/60 Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
ꢀ
IISOL ≤ 1mA  
ꢀ
Md  
Mounting force  
11..66 / 2.5..14.6  
2
N/lb.  
g
Weight  
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, unless otherwise specified)  
ꢀ
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
300  
2.5  
V
ꢀ
ꢀ
5.0  
V
power supplies  
DC choppers  
AC motor drives  
±100 nA  
25 μA  
ꢀ
ꢀ
IDSS  
VDS = VDSS  
VGS = 0V  
TJ = 125°C  
1
mA  
RDS(on)  
VGS = 10V, ID = 26A, Note 1  
75 mΩ  
DS99246F(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFC52N30P  
ISOPLUS220TM (IXFC) Outline  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 26A, Note 1  
20  
30  
S
Ciss  
Coss  
Crss  
3490  
550  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
130  
td(on)  
tr  
td(off)  
tf  
24  
22  
60  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 52A  
RG = 4Ω (External)  
Note:  
Qg(on)  
Qgs  
110  
25  
nC  
nC  
nC  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 26A  
Qgd  
53  
RthJC  
RthCS  
1.25 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
52  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = 52A, VGS = 0V, Note 1  
150  
1.5  
Ref: IXYS CO 0177 R0  
trr  
QRM  
IRM  
200 ns  
IF = 25A, -di/dt = 100A/μs  
800  
7
nC  
A
VR = 100V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFC52N30P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
150  
125  
100  
75  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
9V  
VGS = 10V  
8V  
7V  
6V  
8V  
7V  
50  
6V  
5V  
25  
5V  
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
VD S - Volts  
0
4
8
12  
16  
20  
24  
28  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = 26A Value  
vs. Junction Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
8V  
VGS = 10V  
7V  
6V  
5V  
ID = 52A  
ID = 26A  
0
-50 -25  
0
25  
50  
75  
100 125 150  
0
1
2
3
4
5
6
VD S - Volts  
7
8
9
10  
TJ - Degrees Centigrade  
Fig. 6. Drain Current vs. Case  
Temperature  
Fig. 5. RDS(on) Normalized to ID = 26A Value  
vs. Drain Current  
27  
24  
21  
18  
15  
12  
9
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
6
3
0
-50 -25  
0
25  
50  
75  
100 125 150  
0
25  
50 75 100  
I D - Amperes  
125  
150  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFC52N30P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
0
10 20 30 40 50 60 70 80 90 100  
I D - Amperes  
4.0  
4.5  
5.0  
5.5 6.0  
VG S - Volts  
6.5  
7.0  
7.5  
8.0  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
160  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 150V  
ID = 26A  
IG = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0
10 20 30 40 50 60 70 80 90 10 11 12  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
VS D - Volts  
0
0
Q G - nanoCoulombs  
Fig. 12. Forward-Bias Safe  
Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
10000  
1000  
100  
TJ = 25ºC  
TJ = 150ºC  
Single Pulse  
f = 1MHz  
C
iss  
R
DS(on)  
Limit  
25µs  
1ms  
C
C
oss  
rss  
10ms  
100ms  
DC  
1
10  
100  
1000  
0
5
10  
15 20  
VD S - Volts  
25  
30  
35  
40  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_52N30P (6S)6-13-06-C  
IXFC52N30P  
Fig. 13. Maximum Transient Thermal Impedance  
10.00  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_52N30P (6S)6-13-06-C  
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