IXFE 180N20
Symbol
gfs
TestConditions
Characteristic Values
ISOPLUS-227 B
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
VDS = 15 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
70
95
S
Ciss
Coss
Crss
14400
3200
960
pF
pF
pF
td(on)
tr
td(off)
tf
55
85
180
36
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 Ω (External),
Qg(on)
Qgs
Qgd
380
100
170
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCK
0.25 K/W
K/W
0.05
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
180
720
1.2
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 50A, -di/dt = 100 A/µs, VR = 100 V T = 25°C
250
ns
µC
A
QRM
IRM
TJJ = 25°C 1.5
10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
