HiPerFETTM
Power MOSFETs
IXFH 88N20Q
IXFK 88N20Q
IXFX 88N20Q
VDSS = 200 V
ID25 = 88 A
RDS(on) = 30 mΩ
≤ 200 ns
trr
N-ChannelEnhancementMode
AvalancheRated, Highdv/dt, LowQg
Preliminary data sheet
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
D (TAB)
TO-264 AA (IXFK)
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
88
352
88
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
50
2.5
mJ
J
G
D
S
D (TAB)
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
PLUS 247TM (IXFX)
PD
TC = 25°C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
Md
Mounting torque
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
TAB = Drain
Weight
Symbol
TO-247, PLUS 247
TO-264
6
10
g
g
Features
z Low gate charge
z International standard packages
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
Epoxy meet UL 94 V-0, flammability
classification
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Avalanche energy and current rated
z Fast intrinsic Rectifier
VDSS
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
200
2.0
V
V
VGS(th)
4.0
IGSS
IDSS
VGS = ±20 V DC, VDS = 0
±100 nA
25 µA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
z
Easy to mount
Space savings
High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
30 mΩ
z
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
z
© 2003 IXYS All rights reserved
DS98969A(03/03)
