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IXFK20N120

型号：

IXFK20N120

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

574 K

下载PDF手册
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
IXFK 20N120  
IXFX 20N120  
VDSS = 1200 V  
ID25 20 A  
RDS(on) = 0.75 Ω  
=
trr ≤ 300 ns  
PLUS247TM  
(IXFX)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
1200  
1200  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
D (TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
S
ID25  
IDM  
IAR  
T
= 25°C  
20  
80  
10  
A
A
A
TC = 25°C, Note 1  
TO-264AA(IXFK)  
TCC = 25°C  
EAR  
EAS  
T
= 25°C  
40  
2
mJ  
J
TCC = 25°C  
G
D
D (TAB)  
S
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
PD  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
Features  
z
International standard packages  
1.6 mm (0.063 in.) from case for 10 s  
z
z
z
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Md  
Mounting torque  
TO-264  
0.9/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
z
z
Applications  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
DC choppers  
AC motor control  
Temperature and lighting controls  
z
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 1mA  
1200  
2.5  
V
z
z
VGS(th)  
VDS = VGS, ID = 8mA  
4.5 V  
IGSS  
VGS = 30 V, VDS = 0  
100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
T = 25°C  
TJJ = 125°C  
100 µA  
z
PLUS 247TM package for clip or spring  
2 mA  
mounting  
Space savings  
z
RDS(on)  
V
= 10 V, ID = 0.5 • ID25  
0.75 Ω  
NGoSte 2  
z
High power density  
DS99112(11/03)  
© 2003 IXYS All rights reserved  
IXFK 20N120  
IXFX 20N120  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 • ID25  
Note 2  
15  
27  
S
Ciss  
Coss  
Crss  
7400  
550  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
100  
td(on)  
tr  
td(off)  
tf  
25  
45  
75  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 Ω (External),  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
160  
35  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
60  
A
A12  
RthJC  
RthCK  
0.16 K/W  
K/W  
b
b12  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
0.15  
C
D
E
0.61  
0.80  
.024 .031  
.819 .840  
.620 .635  
20.80 21.34  
15.75 16.13  
e
5.45 BSC  
.215 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
L
19.81 20.32  
.780 .800  
.150 .170  
L1  
Q
R
3.81  
4.32  
Symbol  
TestConditions  
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
20  
80  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
300 ns  
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
1.4  
8
µC  
A
Note: 1. Pulse width limited by TJM  
Millimeter  
Dim.  
Inches  
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
Min.  
Max.  
Min.  
Max.  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
A1  
.114  
A2  
.083  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
D
E
e
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
5.46BSC  
.215BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXFK 20N100  
IXFX 20N100  
Fig. 1. Output Characteristics  
@ 25 deg. C  
Fig. 2. Output Characteristics  
@ 125 Deg. C  
35  
30  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
5V  
VGS = 10V  
6V  
5V  
6
4V  
4
4V  
25  
2
0
0
0
0
3
5
10  
15  
20  
25  
30  
35  
40  
35  
5.5  
0
5
10  
15  
20  
30  
VD S - Volts  
VD S - Volts  
Fig. 3. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
Fig. 4. RDS(on) Normalized to ID25  
Value vs. ID  
2.8  
2.6  
2.4  
2.2  
2
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
TJ = 125ºC  
ID = 20A  
1.8  
1.6  
1.4  
1.2  
1
1.8  
1.6  
1.4  
1.2  
1
ID = 10A  
TJ = 25ºC  
0.8  
0.6  
0.4  
0.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
5
10  
15  
20  
25  
30  
I D - Amperes  
TJ - Degrees Centigrade  
Fig. 5. Drain Current vs. Case  
Temperature  
Fig. 6. Input Admittance  
24  
22  
20  
18  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
TJ = 125ºC  
25ºC  
-40ºC  
6
4
2
0
0
-50  
-25  
0
25  
50  
75  
100 125 150  
3.5  
4
4.5  
5
TC - Degrees Centigrade  
VG S - Volts  
IXFK 20N100  
IXFX 20N100  
Fig. 8. Source Current vs.  
Source-To-Drain Voltage  
Fig. 7. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
TJ = 25ºC  
0
0
5
10  
15  
20  
25  
30  
35  
0.4  
0.6  
0.8  
1
1.2  
1.4  
I D - Amperes  
VS D - Volts  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
10  
9
8
7
6
5
4
3
2
1
0
10000  
1000  
100  
VDS = 600V  
ID = 10A  
G = 10mA  
C
iss  
I
C
C
oss  
rss  
f = 1MHz  
10  
10  
0
5
15  
20  
25  
30  
35  
40  
0
20  
40  
60  
80  
100 120 140 160  
Q G - nanoCoulombs  
VD S - Volts  
Fig. 11. Maximum Transient Thermal Resistance  
0.18  
0.16  
0.14  
0.12  
0.1  
0.08  
0.06  
0.04  
0.02  
0
1
10  
100  
1000  
Pulse Width - milliseconds  
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