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IXFX220N15P

型号：

IXFX220N15P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiperFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

132 K

下载PDF手册
PolarTM Power MOSFET  
HiperFETTM  
VDSS = 150V  
ID25 = 220A  
RDS(on) ≤ 9mΩ  
IXFK220N15P  
IXFX220N15P  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXFX)  
ID25  
TC = 25°C (Chip Capability)  
220  
A
ILRMS  
IDM  
Leads Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
160  
600  
A
A
IA  
TC = 25°C  
TC = 25°C  
50  
3
A
J
G
D
S
Tab  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
20  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
1250  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z
Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
z
z
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
High Power Density  
Easy to Mount  
z
z
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
AC and DC Motor Drives  
Uninterrupted Power Supplies  
High Speed Power Switching  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
150  
2.5  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
4.5  
z
z
±200 nA  
z
IDSS  
50 μA  
1.5 mA  
z
TJ = 150°C  
Applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
9 mΩ  
DS100017A(01/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK220N15P  
IXFX220N15P  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
85  
S
Ciss  
Coss  
Crss  
15.4  
3040  
35  
nF  
pF  
pF  
td(on)  
35  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
tr  
28  
56  
ns  
ns  
Terminals: 1 - Gate  
2 - Drain  
td(off)  
3 - Source  
4 - Drain  
tf  
17  
ns  
Millimeter  
Inches  
Min. Max.  
Dim.  
Min.  
Max.  
Qg(on)  
Qgs  
162  
58  
nC  
nC  
nC  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Qgd  
56  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
25.91 26.16  
0.15  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
Source-Drain Diode  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
220  
800  
1.4  
R
R1  
S
T
3.81  
1.78  
6.04  
1.57  
4.32  
2.29  
6.30  
1.83  
.150  
.070  
.238  
.062  
.170  
.090  
.248  
.072  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 110A, VGS = 0V, Note 1  
PLUS247TM Outline  
trr  
QRM  
IRM  
200 ns  
IF = 110A, -di/dt = 150A/μs  
1.32  
18.8  
μC  
A
VR = 75V, VGS = 0V  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFK220N15P  
IXFX220N15P  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
9V  
10V  
9V  
8V  
7V  
8V  
7V  
60  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
0
1
2
3
4
5
6
7
8
9
10  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 110A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
220  
200  
180  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 220A  
7V  
6V  
I D = 110A  
60  
40  
5V  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 110A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
180  
External Lead Current Limit  
VGS = 10V  
15V  
160  
140  
120  
100  
80  
- - - - -  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFK220N15P  
IXFX220N15P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
1.5  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 75V  
I
I
D = 110A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
= 1 MHz  
f
RDS(on) Limit  
C
C
isss  
25µs  
100µs  
External Lead Limit  
oss  
1ms  
TJ = 175ºC  
C = 25ºC  
Single Pulse  
C
rss  
T
10ms  
DC  
100ms  
10  
1
5
10  
15  
20  
25  
30  
35  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK220N15P  
IXFX220N15P  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_220N15P(93)01-07-11-A  
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