IXFA14N60P IXFP14N60P
IXFH14N60P
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 (IXFP) Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
7
13
S
Ciss
Coss
Crss
2500
215
13
pF
pF
pF
td(on)
tr
td(off)
tf
23
27
70
26
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
36
16
12
nC
nC
nC
Pins: 1 - Gate
2 - Drain
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
Qgd
RthJC
RthCH
0.42 °C/W
°C/W
(TO-220)
(TO-247)
0.50
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
14
A
A
V
TO-247 (IXFH) Outline
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
42
1.5
trr
IRM
QRM
200 ns
IF = 14A, -di/dt = 100A/μs
∅ P
6.0
0.6
A
nC
1
2
3
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
