请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFN110N60P3

型号：

IXFN110N60P3

描述：

Polar3 HiPerFET功率MOSFET[ Polar3 HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

130 K

下载PDF手册
Advance Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 90A  
RDS(on) ≤ 56mΩ  
IXFN110N60P3  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
90  
A
A
G = Gate  
S = Source  
D = Drain  
275  
IA  
EAS  
TC = 25°C  
TC = 25°C  
55  
3
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
35  
V/ns  
W
1500  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
z
International Standard Package  
miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
z
z
z
z
Avalanche Rated  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Weight  
30  
g
Advantages  
z
Easy to Mount  
Space Savings  
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z DC-DC Converters  
z Battery Chargers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
5.0  
±200 nA  
z Uninterrupted Power Supplies  
z AC Motor Drives  
IDSS  
50 μA  
6 mA  
z High Speed Power Switching  
Applications  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 55A, Note 1  
56 mΩ  
DS100305(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN110N60P3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 55A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
65  
105  
S
Ciss  
Coss  
Crss  
18  
1650  
5.5  
nF  
pF  
pF  
RGi  
1.0  
63  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A  
RG = 1Ω (External)  
tr  
19  
77  
ns  
ns  
td(off)  
(M4 screws (4x) supplied)  
tf  
11  
ns  
Qg(on)  
Qgs  
245  
83  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 55A  
Qgd  
53  
RthJC  
RthCS  
0.083 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
110  
440  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
QRM  
IRM  
250 ns  
IF = 55A, -di/dt = 100A/μs  
1.6  
14.0  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN110N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
220  
200  
180  
160  
140  
120  
100  
80  
VGS = 10V  
8V  
VGS = 10V  
8V  
100  
80  
60  
40  
20  
0
7V  
7V  
6V  
6V  
5V  
60  
40  
20  
5V  
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
100  
80  
60  
40  
20  
0
I D = 110A  
6V  
I D = 55A  
5V  
4V  
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
100  
80  
60  
40  
20  
0
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFN110N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.1  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
160  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 300V  
I D = 55A  
140  
120  
100  
80  
I G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
50  
100  
150  
200  
250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
C
iss  
RDS(on) Limit  
100  
10  
1
100µs  
C
oss  
TJ = 150ºC  
C
10  
rss  
TC = 25ºC  
1ms  
Single Pulse  
= 1 MHz  
5
f
1
10  
100  
1,000  
0
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN110N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_110N60P3(K9)03-16-11  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.172814s