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IXFP22N60P3

型号:

IXFP22N60P3

描述:

Polar3 HiperFET功率MOSFET[ Polar3 HiperFET Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

147 K

Advance Technical Information  
Polar3TM HiperFETTM  
Power MOSFETs  
VDSS = 600V  
ID25 = 22A  
RDS(on) 360mΩ  
IXFP22N60P3  
IXFQ22N60P3  
IXFH22N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXFP)  
Fast Intrinsic Rectifier  
G
D
Tab  
S
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
22  
55  
A
A
TO-247 (IXFH)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
11  
A
EAS  
400  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
35  
V/ns  
W
G
D
S
Tab  
500  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-220  
TO-3P  
TO-247  
3.0  
5.5  
6.0  
g
g
g
z Low RDS(ON) and QG  
z Low Package Inductance  
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.0  
Applications  
±100 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25 μA  
1.25 mA  
TJ = 125°C  
z DC-DC Converters  
z Laser Drivers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
360 mΩ  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
DS100321(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFP22N60P3 IXFQ22N60P3  
IXFH22N60P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
14  
24  
S
Ciss  
Coss  
Crss  
2600  
265  
3.4  
pF  
pF  
pF  
RGi  
1.3  
Ω
td(on)  
tr  
td(off)  
tf  
28  
17  
54  
19  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
38  
10  
11  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-247 Outline  
IS  
VGS = 0V  
22  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
88  
1.4  
250  
P  
trr  
ns  
A
1
2
3
IF = 11A, -di/dt = 100A/μs  
IRM  
QRM  
8.0  
0.8  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
TO-220 Outline  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Pins:  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
1 - Gate  
2 - Drain  
3 - Source  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
.780 .800  
.177  
P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFP22N60P3 IXFQ22N60P3  
IXFH22N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
6V  
5V  
6
4
2
5V  
0
0
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 11A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
22  
20  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 22A  
I D = 11A  
5V  
4V  
6
4
2
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 11A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
24  
20  
16  
12  
8
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
5
10  
15  
20  
25  
30  
35  
40  
45  
TC - Degrees Centigrade  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFP22N60P3 IXFQ22N60P3  
IXFH22N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
35  
30  
25  
20  
15  
10  
5
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
0
0
0
5
10  
15  
20  
25  
30  
35  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
40  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 300V  
I D = 11A  
35  
30  
25  
20  
15  
10  
5
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
5
10  
15  
20  
25  
30  
35  
40  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
10  
100  
= 1 MHz  
f
RDS(on) Limit  
C
iss  
100µs  
10  
C
oss  
1
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
1ms  
1
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFP22N60P3 IXFQ22N60P3  
IXFH22N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_22N60P3(W6)03-31-11  
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