PZT194
NPN Transistor
Elektronische Bauelemente
Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Description
The PZT194 is designed for medium
power amplifier applications.
Features
* 1 Amps Continous Current
Millimeter
Min. Max.
13̓TYP.
Millimeter
* 60 Volt VCEO
REF.
REF.
Min.
6.70
2.90
0.02
0̓
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
B
J
1
2
3
4
5
* Complementary To PZT195
2.30 REF.
1 9 4
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
Value
80
60
5
Units
VCBO
Collector-Base Voltage
V
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
1
A
IC
2
200
2
mA
W
IB
Base Current
Total Power Dissipation
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
Min
80
Max
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
-
-
-
-
-
-
-
-
60
V
V
5
-
100
100
nA
nA
nA
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
-
IEBO
ICES
VEB= C=0
4V,I
-
-
VCES = 60V
100
0.25
0.5
-
-
-
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
-
-
IC=500mA,IB=50 mA
IC=1A,IB=100mA
IC=1A,IB=100mA
IC=1A,VCE=5V
Collector Saturation Voltage
V
Base Saturation Voltage
Base-Emitter Voltage
-
V
V
1.1
1.0
-
-
-
100
100
80
-
300
-
VCE= 5V, IC=1mA
*hFE2
-
-
-
-
-
VCE= 5V, IC=500mA
VCE= 5V, IC=1A
DC Current Gain
*hFE3
*hFE4
-
30
150
-
VCE= 5V, IC=2A
Gain-Bandwidth Product
Output Capacitance
-
fT
MH
VCE= 10V, IC= 50mA
z
, f=100MHz
10
pF
Cob
VCB= 10V, f=1MHz,IE=0
≦
≦
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
µ
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
