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NVTR4502P

型号：

NVTR4502P

描述：

â ???? 30 V，A ???? 1.95 A单，PA ????通道， SOTA ???? 23[ −30 V, −1.95 A, Single, P−Channel, SOT−23 ]

品牌：

ONSEMI[ ONSEMI ]

页数：

5 页

PDF大小：

142 K

下载PDF手册
NTR4502P, NVTR4502P  
Power MOSFET  
−30 V, −1.95 A, Single, P−Channel,  
SOT−23  
Features  
http://onsemi.com  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
V
R
TYP  
I
D
Max (Note 1)  
−1.95 A  
(BR)DSS  
DS(on)  
• Low R  
for Low Conduction Losses  
DS(ON)  
155 mW @ −10 V  
240 mW @ −4.5 V  
• SOT−23 Surface Mount for Small Footprint (3 X 3 mm)  
• AEC Q101 Qualified − NVTR4502P  
• These Devices are Pb−Free and are RoHS Compliant  
−30 V  
P−Channel MOSFET  
Applications  
• DC to DC Conversion  
S
• Load/Power Switch for Portables and Computing  
• Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.  
• Battery Charging Circuits  
G
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
−30  
20  
V
V
A
DSS  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Gate−to−Source Voltage  
V
GS  
Drain  
3
Drain Current (Note 1)  
t < 10 s T = 25°C  
I
D
−1.95  
−1.56  
1.25  
A
T = 70°C  
A
TR2 M G  
Power Dissipation  
(Note 1)  
t < 10 s  
P
W
A
D
G
SOT−23  
CASE 318  
STYLE 21  
2
1
Gate  
Continuous Drain Current Steady T = 25°C  
I
D
−1.13  
−0.90  
0.4  
Source  
A
(Note 1)  
State  
Steady State  
t = 10 ms  
T = 70°C  
A
TR2 = Device Code  
Power Dissipation  
(Note 1)  
P
W
M
G
= Date Code*  
= Pb−Free Package  
D
Pulsed Drain Current  
I
−6.8  
A
(Note: Microdot may be in either location)  
p
DM  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Operating Junction and Storage Temperature  
T ,  
STG  
−55 to  
150  
°C  
J
T
Source Current (Body Diode)  
I
−1.25  
A
S
ORDERING INFORMATION  
Lead Temperature for Soldering Purposes  
(1/8 in from case for 10 s)  
T
260  
°C  
L
Device  
Package  
Shipping†  
NTR4502PT1G  
SOT−23  
(Pb−Free)  
3000 / Tape & Reel  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Max  
300  
100  
Unit  
NVTR4502PT1G  
SOT−23  
(Pb−Free)  
3000 / Tape & Reel  
Junction−to−Ambient – Steady State (Note 1)  
Junction−to−Ambient – t = 10 s (Note 1)  
R
°C/W  
q
JA  
R
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in sq. pad size  
(Cu area = 1.127 in sq. [1 oz] including traces).  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
August, 2011 − Rev. 5  
NTR4502P/D  
 
NTR4502P, NVTR4502P  
Electrical Characteristics (T = 25°C unless otherwise specified)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = −250 mA  
−30  
V
(BR)DSS  
D
Zero Gate Voltage Drain Current  
I
V
GS  
= 0 V, V = −30 V  
T = 25°C  
J
−1  
mA  
DSS  
DS  
T = 55°C  
J
−10  
100  
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
I
V
= 0 V, V  
=
20 V  
nA  
GSS  
DS  
GS  
V
V
GS  
= V , I = −250 mA  
−1.0  
−3.0  
200  
350  
V
GS(TH)  
DS  
D
Drain−to−Source On Resistance  
R
V
GS  
= −10 V, I = −1.95 A  
155  
240  
3
mW  
DS(on)  
D
V
GS  
= −4.5 V, I = −1.5 A  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
V
DS  
= −10 V, I =−1.25 A  
S
FS  
D
C
V
= 0 V, f = 1 MHz, V = −15 V  
200  
80  
50  
6
pF  
ISS  
GS  
DS  
Output Capacitance  
C
OSS  
RSS  
Reverse Transfer Capacitance  
Total Gate Charge  
C
Q
V
= −10 V, V = −15 V; I = −1.95 A  
10  
nC  
ns  
G(TOT)  
GS  
DS  
D
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
SWITCHING CHARACTERISTICS (Note 4)  
Turn−On Delay Time  
Q
0.3  
1
G(TH)  
Q
GS  
GD  
Q
1.7  
t
V
=−10 V, V = −15 V,  
= −1.95 A, R = 6 W  
5.2  
12  
10  
20  
35  
30  
d(ON)  
GS  
D
DD  
G
I
Rise Time  
t
r
Turn−Off Delay Time  
t
19  
d(OFF)  
Fall Time  
t
f
17.5  
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)  
Forward Diode Voltage  
Reverse Recovery Time  
V
V
= 0 V, I = −1.25 A  
−0.8  
−1.2  
V
SD  
RR  
GS  
S
t
V
GS  
= 0 V, dI /d = 100 A/ms, I = −1.25 A  
23  
ns  
SD  
t
S
2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).  
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.  
4. Switching characteristics are independent of operating junction temperatures.  
http://onsemi.com  
2
 
NTR4502P, NVTR4502P  
V
= −4.0 V  
GS  
V
DS  
= −10 V  
5
4
3
2
1
0
5
4
3
2
1
0
T = 25°C  
= −3.8 V  
J
V
GS  
T = −55°C  
J
V
= −5.0 V  
GS  
V
GS  
= −3.6 V  
T = 25°C  
J
V
= −7.0 V  
GS  
T = 100°C  
J
V
= −3.4 V  
GS  
V
= −10 V  
GS  
V
GS  
= −3.2 V  
V
= −3.0 V  
GS  
V
V
= −2.8 V  
= −2.6 V  
GS  
V
= −2.4 V  
GS  
GS  
0
1
2
3
4
5
6
7
8
9
10  
1
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)  
DS  
−V , GATE−TO−SOURCE VOLTAGE (V)  
GS  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
0.4  
0.35  
0.3  
0.3  
0.25  
0.2  
T = 25°C  
J
I
= −1.95 A  
D
T = 25°C  
J
V
= −4.5 V  
GS  
GS  
0.25  
0.2  
V
= −10 V  
0.15  
0.1  
0.15  
0.1  
3
4
5
6
7
8
9
10  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
−V , GATE−TO−SOURCE VOLTAGE (V)  
GS  
−I , DRAIN CURRENT (A)  
D
Figure 3. On−Resistance versus  
Gate−to−Source Voltage  
Figure 4. On−Resistance versus Drain Current  
and Gate Voltage  
1000  
100  
10  
1.8  
1.6  
1.4  
1.2  
1
I
V
= −1.9 A  
V
GS  
= 0 V  
D
= −10 V  
GS  
T = 150°C  
J
T = 100°C  
J
0.8  
0.6  
1
−50 −25  
0
25  
50  
75  
100  
125  
150  
2
6
10  
14  
18  
22  
26  
30  
T , JUNCTION TEMPERATURE (°C)  
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)  
DS  
Figure 5. On−Resistance Variation with  
Figure 6. Drain−to−Source Leakage Current  
Temperature  
versus Voltage  
http://onsemi.com  
3
NTR4502P, NVTR4502P  
500  
400  
300  
200  
100  
0
T = 25°C  
J
V
= 0 V  
V
= 0 V  
DS  
GS  
C
ISS  
C
RSS  
C
ISS  
C
OSS  
C
RSS  
10  
5
0
5
10  
15  
20  
25  
30  
−V  
GS  
−V  
DS  
GATE−TO−SOURCE OR DRAIN−TO−SOURCE  
VOLTAGE (V)  
Figure 7. Capacitance Variation  
12  
10  
8
18  
15  
12  
9
Q
T
6
Q
Q
GD  
GS  
4
6
2
3
I
D
= −1.95 A  
T = 25°C  
J
0
0
0
1
2
3
4
5
6
7
Q , TOTAL GATE CHARGE (nC)  
G
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage versus Total Charge  
100  
10  
1
3
V
= −15 V  
= −1.95 V  
= −10 V  
DS  
T = 25°C  
J
I
D
2.5  
2
V
GS  
t
f
t
t
d(off)  
t
r
1.5  
1
d(on)  
0.5  
0
0.3  
0.6  
0.9  
1.2  
1
10  
R , GATE RESISTANCE (W)  
100  
−V , SOURCE−TO−DRAIN VOLTAGE (V)  
SD  
G
Figure 9. Resistive Switching Time Variation  
versus Gate Resistance  
Figure 10. Diode Forward Voltage versus  
Current  
http://onsemi.com  
4
NTR4502P, NVTR4502P  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
−−−  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
0°  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
10°  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
10°  
c
1
2
b
0.25  
e
q
H
A
E
q
L
STYLE 21:  
A1  
PIN 1. GATE  
L1  
VIEW C  
2. SOURCE  
3. DRAIN  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NTR4502P/D  
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