IXBP 5N160 G
IXBH 5N160 G
IC25
= 5.7 A
High Voltage
BIMOSFETTM
VCES = 1600 V
VCE(sat) = 4.9 V
tf
= 70 ns
Monolithic Bipolar MOS Transistor
C
TO-220 AB (IXBP)
Preliminary data sheet
G
C
E
C (TAB)
G
E
TO-247 AD (IXBH)
G
C
E
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
IGBT
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1600
V
V
±
VGES
20
IC25
IC90
TC = 25°C
TC = 90°C
5.7
3.5
A
A
- reverse conduction capability
• industry standard package
- TO-220AB
10/0
ICM
VCEK
VGE
=
V; RG = 47 Ω; TVJ = 125°C
6
A
RBSOA, Clamped inductive load; L = 100 µH
0.8VCES
- TO-247AD
Ptot
TC = 25°C
68
W
epoxy meets UL94V-0
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
Applications
• switched mode power supplies
• DC-DC converters
min.
typ. max.
VCE(sat)
IC = 3 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
4.9
5.6
7.2
V
V
• resonant converters
• lamp ballasts
• laser generators, x ray generators
VGE(th)
ICES
IC = 0.3 mA; VGE = VCE
3.5
5.5
V
VGE = 0 V; VCE = VCES
;
TVJ = 25°C
150 µA
µA
VCE = 0.8VCES; TVJ = 125°C
50
±
IGES
VCE = 0 V; VGE
=
20 V
100 nA
td(on)
tr
td(off)
tf
140
200
120
70
ns
ns
ns
ns
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 3 A
10/0
VGE
=
V; RG = 47 Ω
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 10 V; IC = 3 A
325
26
pF
nC
VF
(reverse conduction); IF = 3 A
6
V
RthJC
1.85 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 2
IXYS Semiconductor GmbH
IXYS Corporation
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
D-68623 Lampertheim
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
