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IXBH12N300

型号：

IXBH12N300

描述：

高电压，高增益BIMOSFETTM单片双极型晶体管MOS[ High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

183 K

下载PDF手册
High Voltage, High Gain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 3000V  
IC110 = 12A  
VCE(sat) ≤ 3.2V  
IXBT12N300  
IXBH12N300  
TO-268 (IXBT)  
G
Symbol  
Test Conditions  
Maximum Ratings  
E
VCES  
VCGR  
TC = 25°C to 150°C  
3000  
3000  
V
V
C (Tab)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-247 (IXBH)  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1ms  
30  
12  
100  
A
A
A
G
C
C (Tab)  
SSOA  
(RBSOA)  
V
GE = 15V, TVJ = 125°C, RG = 30Ω  
ICM = 98  
1500  
A
V
E
Clamped Inductive Load  
PC  
TC = 25°C  
160  
W
G = Gate  
C
= Collector  
E = Emiiter  
Tab = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
z
High Blocking Voltage  
Weight  
TO-268  
TO-247  
4
6
g
g
z International Standard Packages  
z Anti-Parallel Diode  
z Low Conduction Losses  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Advantages  
Min.  
Typ.  
Max.  
z Low Gate Drive Requirement  
z High Power Density  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
3000  
3.0  
V
V
5.0  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
mA  
Applications:  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
VCE(sat)  
IC = 12A, VGE = 15V, Note 1  
2.8  
3.5  
3.2  
V
V
z Uninterruptible Power Supplies (UPS)  
z Laser Generators  
TJ = 125°C  
z Capacitor Discharge Circuits  
z AC Switches  
© 2012 IXYS CORPORATION, All Rights Reserved  
DS100120A(10/12)  
IXBT12N300  
IXBH12N300  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-268 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 12A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
6.5  
10.8  
S
Cies  
Coes  
Cres  
1290  
56  
pF  
pF  
pF  
19  
Qg  
62  
13  
nC  
nC  
nC  
Qge  
Qgc  
IC = 12A, VGE = 15V, VCE = 1000V  
8.5  
Terminals: 1 - Gate  
2,4 - Collector  
3 - Emitter  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
64  
140  
180  
540  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 12A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
65  
395  
175  
530  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 12A, VGE = 15V  
VCE = 1250V, RG = 10Ω  
RthJC  
RthCS  
0.78 °C/W  
°C/W  
TO-247  
0.21  
TO-247 Outline  
Reverse Diode  
∅ P  
Symbol Test Conditions  
Characteristic Values  
1
2
3
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
trr  
IF = 12A, VGE = 0V  
2.1  
V
μs  
A
1.4  
21  
IF = 6A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
IRM  
e
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBT12N300  
IXBH12N300  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
24  
20  
16  
12  
8
240  
200  
160  
120  
80  
VGE = 25V  
VGE = 25V  
20V  
15V  
20V  
10V  
15V  
10V  
5V  
4
40  
5V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
24  
20  
16  
12  
8
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
VGE = 15V  
I C = 24A  
15V  
I C = 12A  
10V  
I C = 6A  
4
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
40  
36  
32  
28  
24  
20  
16  
12  
8
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 24A  
TJ = 125ºC  
25ºC  
- 40ºC  
12A  
4
6A  
13  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXBT12N300  
IXBH12N300  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
Fig. 7. Transconductance  
18  
16  
14  
12  
10  
8
36  
32  
28  
24  
20  
16  
12  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 25ºC  
TJ = 125ºC  
6
4
2
4
0
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
0
0.5  
1
1.5  
2
2.5  
3
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
10,000  
1,000  
100  
f = 1 MHz  
VCE = 1kV  
I C = 12A  
I G = 10mA  
C
ies  
6
C
oes  
4
2
C
res  
0
10  
0
10  
20  
30  
40  
50  
60  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
100  
80  
60  
40  
20  
0
0.1  
TJ = 125ºC  
RG = 30Ω  
dv / dt < 10V / ns  
0.01  
500  
1000  
1500  
VCE - Volts  
2000  
2500  
3000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.  
IXBT12N300  
IXBH12N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Collector Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
RG = 10Ω , VGE = 15V  
VCE = 1250V  
RG = 10Ω , VGE = 15V  
VCE = 1250V  
TJ = 125ºC  
I C = 24A  
I C = 12A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
800  
200  
190  
180  
170  
160  
150  
140  
750  
700  
650  
600  
550  
500  
450  
400  
350  
300  
250  
150  
140  
130  
120  
110  
100  
90  
tf  
t
d(off) - - - -  
t r  
t
d(on) - - - -  
RG = 10Ω, VGE = 15V  
700  
600  
500  
400  
300  
200  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 12A  
I C = 24A, 12A  
80  
70  
I C = 24A  
60  
50  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
700  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
1400  
1200  
1000  
800  
600  
400  
200  
0
340  
300  
260  
220  
180  
140  
100  
60  
t f  
t
tf  
td(off  
) - - - -  
d(off) - - - -  
650  
600  
550  
500  
450  
400  
350  
300  
250  
RG = 10Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 12A  
I C = 24A  
TJ = 125ºC, 25ºC  
6
8
10  
12  
14  
16  
18  
20  
22  
24  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_12N300(4P)06-05-12  
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