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IXBK55N300

型号：

IXBK55N300

描述：

高电压，高增益BIMOSFETTM单片双极型晶体管MOS[ High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

221 K

下载PDF手册
High Voltage, High Gain  
BiMOSFETTM  
VCES = 3000V  
IC110 = 55A  
VCE(sat) ≤ 3.2V  
IXBK55N300  
IXBX55N300  
Monolithic Bipolar  
MOS Transistor  
TO-264 (IXBK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
C
E
3000  
3000  
±25  
V
V
V
V
Tab  
VCGR  
VGES  
PLUS247 (IXBX)  
VGEM  
Transient  
±35  
IC25  
TC = 25°C ( Chip Capability )  
TC = 25°C ( Lead RMS Limit )  
TC = 110°C  
130  
120  
55  
A
A
A
A
ILRMS  
IC110  
ICM  
G
TC = 25°C, 1ms  
600  
C
Tab  
E
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 110  
A
(RBSOA)  
Clamped Inductive Load  
@0.8 • VCES  
G = Gate  
E
= Emitter  
C = Collector  
Tab = Collector  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 10Ω, VCE = 1250V, Non-Repetitive  
10  
μs  
PC  
TC = 25°C  
625  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
TJM  
Tstg  
High Blocking Voltage  
International Standard Packages  
Low Conduction Losses  
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
z
High Current Handling Capability  
MOS Gate Turn-On  
Md  
FC  
Mounting Torque (TO-264 )  
Mounting Force (PLUS247 )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
- Drive Simplicity  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
z
Uninterruptible Power Supplies (UPS)  
Switch-Mode and Resonant-Mode  
50 μA  
z
TJ = 125°C  
3 mA  
Power Supplies  
Capacitor Discharge Circuits  
Laser Generators  
z
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
z
VCE(sat)  
IC = 55A, VGE = 15V, Note 1  
TJ = 125°C  
2.7  
3.3  
3.2  
V
V
DS100158A(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK55N300  
IXBX55N300  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfS  
IC = 55A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
32  
50  
S
Cies  
Coes  
Cres  
7300  
275  
83  
pF  
pF  
pF  
Qg  
335  
47  
nC  
nC  
nC  
Qge  
Qgc  
IC = 55A, VGE = 15V, VCE = 1000V  
130  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
54  
307  
230  
268  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
IC = 110A, VGE = 15V  
1
- GATE  
VCE = 1250V, RG = 2Ω  
2,4 - COLLECTOR  
- EMITTER  
3
52  
585  
215  
260  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 125°C  
IC = 110A, VGE = 15V  
VCE = 1250V, RG = 2Ω  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
0.15  
PLUS 247TM Outline  
Reverse Diode  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max  
VF  
trr  
IF = 55A, VGE = 0V, Note 1  
IF = 28A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
2.5  
V
μs  
A
1.9  
54  
IRM  
1 - GATE  
2 - COLLECTOR  
3 - EMITTER  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note  
1: Pulse Test, t ≤ 300μs, Duty Cycle, d ≤ 2%.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Additional provisions for lead-to-lead isolation are required at VCE >1200V.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXBK55N300  
IXBX55N300  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
120  
100  
80  
60  
40  
20  
0
VGE = 25V  
VGE = 25V  
20V  
20V  
15V  
15V  
10V  
10V  
5V  
5V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
3
4
5
6
7
8
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGE = 25V  
20V  
15V  
VGE = 15V  
I C = 110A  
10V  
I C = 55A  
I C = 27.5A  
5V  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
TJ = 25ºC  
I C = 110A  
TJ = 125ºC  
25ºC  
60  
55A  
- 40ºC  
40  
20  
27.5A  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
6
7
8
9
10  
11  
12  
13  
14  
15  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK55N300  
IXBX55N300  
Fig. 7. Transconductance  
Fig. 8. Forward Voltage Drop of Intrinsic Diode  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 25ºC  
125ºC  
TJ = 125ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0  
VF - Volts  
IC - Amperes  
Fig. 9. Gate Charge  
Fig. 10. Capacitance  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
f = 1 MHz  
VCE = 1000V  
I
I
C = 55A  
G = 10mA  
C
ies  
C
oes  
6
4
C
res  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
50  
100  
150  
200  
250  
300  
350  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
1
120  
100  
80  
60  
40  
20  
0
0.1  
0.01  
TJ = 125ºC  
G = 2Ω  
R
dv / dt < 10V / ns  
0.001  
200  
600  
1000  
1400  
1800  
2200  
2600  
3000  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXBK55N300  
IXBX55N300  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Collector Current  
700  
600  
500  
400  
300  
200  
700  
600  
500  
400  
300  
200  
RG = 2Ω , VGE = 15V  
VCE = 1250V  
TJ = 125ºC  
RG = 2Ω , VGE = 15V  
I C = 220A  
VCE = 1250V  
I C = 110A  
TJ = 25ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
320  
310  
300  
290  
280  
270  
260  
250  
240  
230  
300  
720  
120  
110  
100  
90  
t f  
t
d(off) - - - -  
280  
260  
240  
220  
200  
180  
160  
140  
120  
tr  
t
d(on) - - - -  
700  
680  
660  
640  
620  
600  
580  
560  
RG = 2Ω, VGE = 15V  
TJ = 125ºC, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 110A  
I C = 220A  
80  
70  
I C = 220A  
I C = 110A  
60  
50  
40  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Collector Current  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
320  
300  
280  
260  
240  
220  
200  
180  
160  
140  
360  
340  
320  
300  
280  
260  
240  
220  
680  
600  
520  
440  
360  
280  
200  
120  
tf  
td(off  
) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGE = 15V  
RG = 2Ω, VGE = 15V  
VCE = 1250V  
VCE = 1250V  
I C = 110A  
I C = 220A  
TJ = 125ºC, 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
2
3
4
5
6
7
8
9
10 11 12  
13 14 15  
RG - Ohms  
IC - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXBK55N300  
IXBX55N300  
Fig. 19. Forward-Bias Safe Operating Area  
Fig. 20. Forward-Bias Safe Operating Area  
@ T = 25ºC  
@ T = 75ºC  
C
C
1000  
100  
10  
1000  
100  
10  
V
Limit  
V
Limit  
CE(sat)  
CE(sat)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
1
1
10ms  
10ms  
T
J
= 150ºC  
= 25ºC  
T
J
= 150ºC  
= 75ºC  
0.1  
0.01  
0.1  
0.01  
100ms  
DC  
T
C
100ms  
DC  
T
C
Single Pulse  
Single Pulse  
1
10  
100  
1,000  
10,000  
1
10  
100  
1,000  
10,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: B_55N300 (8T) 11-03-11-C  
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