IXBK75N170
IXBX75N170
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 AA ( IXBK) Outline
Min.
Typ.
Max.
gfS
IC = IC110, VCE = 10V, Note 1
34
56
S
Cies
Coes
Cres
6930
400
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
150
Qg
350
50
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
160
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
46
160
260
440
ns
ns
ns
ns
Resistive load, TJ = 25°C
Dim.
Millimeter
Inches
IC = IC110, VGE = 15V
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
RG = 1Ω, VCE = 0.5 • VCES
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
47
230
260
580
ns
ns
ns
ns
Resistive load, TJ = 125°C
0.53
0.83
.021
1.020
.780
.033
1.030
.786
IC = IC110, VGE = 15V
25.91 26.16
19.81 19.96
5.46 BSC
RG = 1Ω, VCE = 0.5 • VCES
.215 BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
RthJC
RthCS
0.12 °C/W
°C/W
K
L
L1
P
20.32 20.83
.800
.090
.820
.102
0.15
2.29
2.59
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Reverse Diode
PLUS247TM (IXBX) Outline
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
VF
IF = IC110, VGE = 0V, Note 1
3.0
V
trr
IRM
QRM
1.5
50
38.2
μs
A
μC
IF = 37A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
Note
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Additional provisions for lead-to-lead isolation are required at VCE >1200V.
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
PRELIMINARY TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
