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IXFN62N80Q3

型号：

IXFN62N80Q3

描述：

HiperFETTM功率MOSFET Q3级[ HiperFETTM Power MOSFET Q3-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

132 K

下载PDF手册
Preliminary Technical Information  
HiperFETTM  
Power MOSFET  
Q3-Class  
VDSS = 800V  
ID25 = 49A  
RDS(on) ≤ 140mΩ  
IXFN62N80Q3  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
Avalanche Rated  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
800  
800  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
49  
A
A
G = Gate  
S = Source  
D = Drain  
180  
IA  
EAS  
TC = 25°C  
TC = 25°C  
62  
5
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
960  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
z
z
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL ≤ 1mA,  
t = 1s  
z
z
z
z
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Weight  
30  
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
800  
3.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
V
V
z
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
6.5  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
±200 nA  
z
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
50 μA  
z
TJ = 125°C  
4 mA  
z
RDS(on)  
VGS = 10V, ID = 31A, Note 1  
140 mΩ  
DS100342A(04/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXFN62N80Q3  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B (IXFN) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 31A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
28  
48  
S
Ciss  
Coss  
Crss  
13.6  
1260  
100  
nF  
pF  
pF  
RGi  
0.13  
54  
Ω
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 31A  
RG = 1Ω (External)  
tr  
20  
62  
ns  
ns  
td(off)  
(M4 screws (4x) supplied)  
tf  
11  
ns  
Qg(on)  
Qgs  
270  
90  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 31A  
Qgd  
120  
RthJC  
RthCS  
0.13 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
62  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
250  
1.5  
trr  
QRM  
IRM  
300 ns  
IF = 31A, -di/dt = 100A/μs  
1.6  
13.4  
μC  
A
VR = 100V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN62N80Q3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
VGS = 10V  
VGS = 10V  
60  
50  
40  
30  
20  
10  
0
120  
100  
80  
60  
40  
20  
0
9V  
8V  
8V  
7V  
6V  
7V  
6V  
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
8V  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
I D = 62A  
7V  
I D = 31A  
6V  
5V  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
50  
40  
30  
20  
10  
0
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
ID - Amperes  
TC - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXFN62N80Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
125ºC  
25ºC  
- 40ºC  
4.0  
0.2  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
16  
14  
12  
10  
8
200  
180  
160  
140  
120  
100  
80  
VDS = 400V  
I D = 31A  
I G = 10mA  
6
60  
TJ = 125ºC  
4
40  
TJ = 25ºC  
2
20  
0
0
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
50  
100  
150  
200  
250  
300  
350  
400  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
C
iss  
250µs  
C
oss  
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
1ms  
10  
1
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFN62N80Q3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.0001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_62N80Q3(Q9) 5-20-11  
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