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IXFK44N80Q3

型号：

IXFK44N80Q3

描述：

N沟道增强模式雪崩RatedFast内在整流器[ N-Channel Enhancement Mode Avalanche RatedFast Intrinsic Rectifier ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

132 K

下载PDF手册
HiperFETTM  
Power MOSFETs  
Q3-Class  
VDSS = 800V  
ID25 = 44A  
RDS(on) ≤ 190mΩ  
IXFK44N80Q3  
IXFX44N80Q3  
trr  
≤ 300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
800  
800  
V
V
VDGR  
Tab  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
44  
A
A
130  
IA  
EAS  
TC = 25°C  
TC = 25°C  
44  
3.5  
A
J
G
D
S
Tab  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
50  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
1250  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
International Standard Packages  
Avalanche Rated  
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
z
z
z
z
z
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Low RDS(on) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
z
z
High Power Density  
Easy to Mount  
Space Savings  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
800  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
Applications  
±200 nA  
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
IDSS  
50 μA  
2.5 mA  
z
TJ = 125°C  
z
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
190 mΩ  
z
z
DS100359B(10/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXFK44N80Q3  
IXFX44N80Q3  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
22  
37  
S
Ciss  
Coss  
Crss  
10950  
957  
pF  
pF  
pF  
95  
RGi  
0.20  
45  
Ω
: 1 - Gate  
2 - Drain  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
3 - Source  
4 - Drain  
tr  
60  
63  
ns  
ns  
Dim.  
Millimeter  
Inches  
td(off)  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
tf  
20  
ns  
Qg(on)  
Qgs  
185  
67  
nC  
nC  
nC  
b
b1  
b2  
c
D
E
e
J
1.12  
2.39  
2.90  
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.00  
0.00  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.215 BSC  
.000  
.000  
.056  
.106  
.122  
.033  
1.030  
.786  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
0.83  
Qgd  
83  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.25  
0.25  
.010  
.010  
0.15  
K
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Source-Drain Diode  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
PLUS 247TM Outline  
IS  
VGS = 0V  
44  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.4  
trr  
QRM  
IRM  
300 ns  
IF = 22A, -di/dt = 100A/μs  
1.8  
13.4  
μC  
A
VR = 100V, VGS = 0V  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
9V  
VGS = 10V  
I D = 44A  
I D = 22A  
8V  
7V  
6V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
ID - Amperes  
TC - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
4
0.3  
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 400V  
I D = 22A  
I G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
40  
80  
120  
160  
200  
240  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit  
C
iss  
25µs  
100µs  
C
C
oss  
1
TJ = 150ºC  
1ms  
TC = 25ºC  
rss  
Single Pulse  
10  
0.1  
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_44N80Q3(Q8-R88)10-10-12  
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