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IXFK64N60P

型号：

IXFK64N60P

描述：

N沟道增强模式额定雪崩快速内在二极管[ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

175 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFK 64N60P  
IXFX 64N60P  
VDSS  
ID25  
RDS(on)  
=
=
≤
≤
600 V  
64 A  
96 mΩ  
200 ns  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXFK)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
S
(TAB)  
ID25  
IDM  
TC =25° C  
64  
A
A
TC = 25° C, pulse width limited by TJM  
150  
IAR  
TC =25° C  
64  
A
PLUS247 (IXFX)  
EAR  
EAS  
TC =25° C  
TC =25° C  
80  
mJ  
J
3.5  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
TC =25° C  
1040  
W
(TAB)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D
= Drain  
S = Source Tab = Drain  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
° C  
° C  
FC  
Mounting force (PLUS247)  
Mounting torque (TO-264)  
20..120/4.5..25  
N/lb  
Features  
Md  
1.13/10 Nm/lb.in.  
l
l
l
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Weight  
TO-264  
PLUS247  
10  
6
g
g
l
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ.  
(TJ = 25° C, unless otherwise specified)  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
Advantages  
3.0  
5.0  
l
Easy to mount  
Space savings  
200  
nA  
l
l
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
96 mΩ  
DS99442E(01/06)  
© 2006 IXYS All rights reserved  
IXFK 64N60P  
IXFX 64N60P  
PLUS 247TM Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, Note 1  
40  
63  
S
Ciss  
Coss  
Crss  
12  
1150  
80  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
28  
23  
79  
24  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25  
Terminals: 1 - Gate  
2 - Drain (Collector)  
RG = 1 Ω (External)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
200  
70  
nC  
nC  
nC  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
68  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
RthJC  
RthCS  
0.12 ° C/W  
° C/W  
0.15  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
64  
150  
1.5  
A
TO-264 Outline  
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFK 64N60P  
IXFX 64N60P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
V
= 10V  
V
= 10V  
8V  
GS  
GS  
8V  
7V  
7V  
6V  
6V  
5V  
60  
40  
20  
5V  
14  
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10  
12  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 64A  
D
I
= 32A  
D
5V  
10  
0.7  
0.4  
0
0
2
4
6
8
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 32A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.2  
3
V
= 10V  
GS  
T
J
= 125ºC  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
140  
0.8  
0
20  
40  
60  
80  
100  
120  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFK 64N60P  
IXFX 64N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
130  
120  
110  
100  
90  
80  
T
J
= - 40ºC  
25ºC  
125ºC  
70  
T
J
= 125ºC  
60  
25ºC  
- 40ºC  
50  
40  
30  
20  
10  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 300V  
DS  
I
I
= 32A  
D
G
= 10mA  
60  
T
J
= 125ºC  
40  
T
J
= 25ºC  
20  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100 120 140 160 180 200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
f = 1 MHz  
T
T
= 150ºC  
= 25ºC  
J
C
C
iss  
R
Limit  
DS(on)  
25µs  
100µ  
1ms  
C
C
oss  
10ms  
DC  
rss  
30  
10  
1
0
5
10  
15  
20  
25  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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