SDSM
M
IP Typee
e
D
D
T
T
y
y
p
p
MMOOSSFFIECETT
Product specification
KX7N10L
Typlacl Characteristics
V
Top :
10.0GVS
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom: 3.0 V
℃
150
100
100
℃
25
℃
-55
※
Notes :
※
Notes :
μ
1. V = 30V
2. 250 s Pulse Test
1. 250 s Pulse Test
2. TC = 25
DS μ
℃
-1
-1
10
10
-1
0
10
1
10
0
2
4
6
8
10
10
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.2
0.9
0.6
0.3
0.0
VGS = 5V
100
VGS = 10V
℃
150
℃
25
※
Notes :
1. V = 0V
GSμ
2. 250 s Pulse Test
※
℃
Note : T = 25
J
-1
10
0
5
10
15
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
600
500
400
300
200
100
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 50V
VDS = 80V
※
Notes :
C
1. VGS = 0 V
2. f = 1 MHz
iss
6
Coss
4
C
rss
2
※
Note : ID = 7.3 A
7
0
10-1
100
101
0
1
2
3
4
5
6
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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