SMD Type
Transistors
Product specification
FZT849
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
80
30
6
Typ
120
40
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
V
8
V
VCB=70V
ICBO
50
1
nA
ìA
Collector Cut-Off Current
Collector Cut-Off Current
VCB=70V,Ta = 100
IEBO
VEB=6V
10
nA
35
67
50
IC=0.5A, IB=20mA
IC=1A, IB=20mA
IC=2A, IB=20mA
IC=6.5A, IB=300mA
110
215
350
Collector-emitter saturation voltage *
VCE(sat)
mV
168
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
VBE(sat) IC=6.5A, IB=300mA
VBE(on) IC=6.5A, VCE=1V
IC=10mA, VCE=1V
1.2
V
V
1.13
100
100
100
30
200
200
150
65
IC=1A, VCE=1V*
hFE
IC=7A, VCE=1V*
300
Static Forward Current Transfer Ratio
IC=20A, VCE=2V*
Transitional frequency
Output capacitance
Turn-on time
fT
IC=100mA, VCE=10V f=50MHz
100
75
MHz
pF
Cobo
t(on)
t(off)
VCB=10V, f=1MHz
IC=1A, VCC=10V
IB1=IB2=100mA
45
ns
Turn-off time
630
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT849
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