SMD Type
Transistors
Product specification
FZT951
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
-100 -140
-60
-6
-90
-8
V
V
VCB=-80V
ICBO
-50
-
nA
ìA
Collector Cut-Off Current
Emitter Cut-Off Current
1
VCB=-80V,Ta = 100
IEBO
VEB=-6V
-10
nA
mV
mV
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
-20
-85
-50
-140
Collector-emitter saturation voltage *
VCE(sat)
-155 -210
-137 -460
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=-5A, IB=-500mA
VBE(on) IC=-5A, VCE=-1V
IC=-10mA, VCE=-1V*
-1080 -1240
-935 -1070 mV
200
100
100
75
IC=-2A, VCE=-1V*
hFE
IC=-5A, VCE=-1V*
200
90
300
Static Forward Current Transfer Ratio*
IC=-10A, VCE=-1V*
10
25
Transitional frequency
Output capacitance
Turn-on time
fT
IC=-100mA, VCE=-10V, f=50MHz
120
74
MHz
pF
Cobo
t(on)
t(off)
VCB=-10V, f=1MHz
IC=-2A, VCC=-10V
IB1=IB2=-200mA
82
ns
Turn-off time
350
ns
* Pulse test: tp = 300 ìs; d
0.02.
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