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IXFH160N15T2

型号：

IXFH160N15T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

200 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 160A  
IXFH160N15T2  
RDS(on) ≤ 9.0mΩ  
trr  
≤ 160ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
D
Tab  
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
160  
440  
A
A
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
80  
1.5  
A
J
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
Features  
880  
z International Standard Package  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
z Dynamaic dv/dt Rated  
z Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
Low RDS(on)  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
z Battery Chargers  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
150  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
z Switch-Mode and Resonant-Mode  
Power Supplies  
4.5  
z DC Choppers  
z AC Motor Drives  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
± 200 nA  
IDSS  
10 µA  
1 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
7.7  
9.0 mΩ  
DS100228A(04/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH160N15T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
80  
130  
S
Ciss  
Coss  
Crss  
15  
1120  
113  
nF  
pF  
pF  
∅ P  
VGS = 0V, VDS = 25V, f = 1MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
37  
15  
50  
26  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 2Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
253  
67  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
73  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.17 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
160  
640  
1.4  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
160 ns  
IF = 80A, -di/dt = 100A/µs  
IRM  
QRM  
7.00  
0.32  
A
VR = 75V, VGS = 0V  
µC  
Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH160N15T2  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
360  
320  
280  
240  
200  
160  
120  
80  
160  
140  
120  
100  
80  
VGS = 15V  
10V  
VGS = 15V  
10V  
8V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
20  
40  
5V  
0
0
0
2
4
6
8
10  
12  
14  
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
3.6  
360  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
160  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 160A  
6V  
I D = 80A  
60  
5V  
4V  
40  
20  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
180  
160  
140  
120  
100  
80  
VGS = 10V  
TJ = 175ºC  
60  
TJ = 25ºC  
40  
20  
0
40  
80  
120  
160  
200  
240  
280  
320  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH160N15T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
25ºC  
150ºC  
60  
40  
40  
20  
0
0
3.0  
0.2  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.6  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 75V  
I
I
D = 80A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
40  
80  
120  
160  
200  
240  
280  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
(
RDS on) Limit  
= 1 MHz  
f
25µs  
C
iss  
100µs  
C
C
1ms  
oss  
10ms  
DC  
1
TJ = 175ºC  
C = 25ºC  
Single Pulse  
rss  
T
0.1  
10  
1
10  
100  
1,000  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH160N15T2  
Fig. 14. Resistive Turn-on Rise Time  
Fig. 13. Resistive Turn-on Rise Time  
vs. Junction Temperature  
vs. Drain Current  
22  
20  
18  
16  
14  
12  
24  
22  
20  
18  
16  
14  
12  
RG = 2Ω , VGS = 10V  
RG = 2ꢀ , VGS = 10V  
DS = 75V  
VDS = 75V  
V
TJ = 25ºC  
I D = 160A  
I D = 80A  
TJ = 125ºC  
80  
90  
100  
110  
120  
130  
140  
150  
160  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times  
vs. Gate Resistance  
500  
400  
300  
200  
100  
0
120  
100  
80  
42  
90  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
t f  
t
d(off) - - - -  
RG = 2Ω, VGS = 10V  
DS = 75V  
38  
34  
30  
26  
22  
18  
80  
70  
60  
50  
40  
30  
V
V
I D = 160A  
I D = 80A, 160A  
I D = 80A  
60  
40  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times  
vs. Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times  
vs. Drain Current  
500  
400  
300  
200  
100  
0
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
34  
32  
30  
28  
26  
24  
22  
95  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 75V  
tf  
t
d(off) - - - -  
RG = 2ꢀ, VGS = 10V  
DS = 75V  
85  
75  
65  
55  
45  
35  
V
V
I D = 160A  
TJ = 25ºC, 125ºC  
I D = 80A  
50  
2
4
6
8
10  
12  
14  
16  
80  
90  
100  
110  
120  
130  
140  
150  
160  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH160N15T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_160N15T2(7V)1-14-10-A  
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