IXFK64N60Q3
IXFX64N60Q3
Symbol
Test Conditions
Characteristic Values
TO-264 AA Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
26
42
S
Ciss
Coss
Crss
9930
1090
90
pF
pF
pF
RGi
0.13
45
Ω
Terminals: 1 - Gate
2 - Drain
td(on)
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
3 - Source
4 - Drain
tr
15
50
ns
ns
Dim.
Millimeter
Inches
td(off)
Min.
Max.
Min.
Max.
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
tf
11
ns
Qg(on)
Qgs
190
67
nC
nC
nC
b
b1
b2
c
D
E
e
J
1.12
2.39
2.90
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.00
1.42
2.69
3.09
.044
.094
.114
.021
1.020
.780
.215 BSC
.000
.000
.056
.106
.122
.033
1.030
.786
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
0.83
Qgd
78
RthJC
RthCS
0.10 °C/W
°C/W
0.25
0.25
.010
.010
0.15
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
PLUS 247TM Outline
IS
VGS = 0V
64
A
A
V
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
256
1.4
trr
QRM
IRM
300 ns
IF = 32A, -di/dt = 100A/μs
2.1
16.6
μC
A
VR = 100V, VGS = 0V
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
ADVANCE TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
