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IXST24N60B

型号:

IXST24N60B

描述:

高速IGBT[ High Speed IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

107 K

IXSH 24N60B  
IXST 24N60B  
IXSH 24N60BD1  
IXST 24N60BD1  
VCES  
IC25  
= 600 V  
= 48 A  
High Speed IGBT  
VCE(sat) = 2.5 V  
tfi typ  
Short Circuit SOA Capability  
= 170 ns  
(D1)  
TO-247 AD (IXSH)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
(TAB)  
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
TO-268 (D3) ( IXST)  
IC25  
IC90  
ICM  
TC = 25°C  
48  
24  
96  
A
A
A
TC = 90°C  
G
(TAB)  
TC = 25°C, 1 ms  
E
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 33 Ω  
Clamped inductive load, VCC= 0.8 VCES  
ICM = 48  
@ 0.8 VCES  
A
G = Gate  
E=Emitter  
TAB = Collector  
tSC  
(SCSOA)  
VGE = 15 V, VCE = 360 V, TJ = 125°C  
RG = 33 Ω, non repetitive  
10  
µs  
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
z International standard packages  
z Guaranteed Short Circuit SOA  
capability  
-55 ... +150  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
z Low VCE(sat)  
Weight  
6
g
- for low on-state conduction losses  
z High current handling capability  
z MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
z Fast Fall Time for switching speeds  
up to 50 kHz  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
600  
3.5  
V
V
z
AC and DC motor speed control  
Uninterruptible power supplies (UPS)  
Welding  
IC = 1.5 mA, VCE = VGE  
6.5  
z
z
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
24N60B  
24N60BD1  
24N60B  
25 µA  
200 µA  
1
2
mA  
mA  
Advantages  
24N60BD1  
z
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.5  
z
VCE(sat)  
IC = IC90, VGE = 15 V  
V
© 2003 IXYS All rights reserved  
DS98768B(02/03)  
IXSH 24N60B IXSH 24N60BD1  
IXST 24N60B IXST 24N60BD1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD Outline  
min. typ. max.  
IC = IC90; VCE = 10 V,  
9
13  
S
Pulse test, t 300 µs, duty cycle 2 %  
Cies  
1450  
pF  
Coes  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
24N60B  
24N60BD1  
130  
160  
pF  
pF  
Cres  
37  
pF  
QG  
41  
18  
18  
nC  
nC  
nC  
QGE  
QGC  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
Inductive load, TJ = 25°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V, L = 100 µH  
150  
170  
1.3  
250 ns  
300 ns  
2.6 mJ  
VCE = 0.8 VCES, RG = 33 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
55  
75  
ns  
ns  
Inductive load, TJ = 125°C  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
1.2  
190  
280  
2.4  
mJ  
ns  
ns  
IC = IC90, VGE = 15 V,  
VCE = 0.8 VCES, RG = 33 Ω  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
6.15 BSC  
TO-268 Outline  
Eoff  
mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
0.25  
Reverse Diode (FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VF  
TestConditions  
IF = IC90, VGE = 0 V,  
TJ = 150°C  
1.6  
2.5  
V
V
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Pulse test, t 300 µs, duty cycle d 2 % TJ = 25°C  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
IRM  
trr  
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs  
VR = 100 V  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V  
6
A
ns  
ns  
TJ = 100°C 100  
TJ = 25°C 25  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
RthJC  
0.9 K/W  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
3.80 4.10  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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