请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

4N27FR2VM

型号：

4N27FR2VM

描述：

光电耦合器\n[ OPTOCOUPLER ]

品牌：

ETC[ ETC ]

页数：

7 页

PDF大小：

104 K

下载PDF手册
4N25  
4N26  
4N27  
4N28  
GlobalOptoisolator  
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide  
infrared emitting diode optically coupled to a monolithic silicon phototransistor  
detector.  
•
•
•
Most Economical Optoisolator Choice for Medium Speed, Switching Applications  
Meets or Exceeds All JEDEC Registered Specifications  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
Applications  
•
•
•
•
General Purpose Switching Circuits  
Interfacing and coupling systems of different potentials and impedances  
I/O Interfacing  
6
1
Solid State Relays  
STANDARD THRU HOLE  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
INPUT LED  
Reverse Voltage  
V
3
Volts  
mA  
R
SCHEMATIC  
Forward Current — Continuous  
I
F
60  
LED Power Dissipation @ T = 25°C  
with Negligible Power in Output Detector  
P
D
120  
mW  
A
1
2
3
6
Derate above 25°C  
1.41  
mW/°C  
OUTPUT TRANSISTOR  
Collector–Emitter Voltage  
Emitter–Collector Voltage  
Collector–Base Voltage  
5
4
V
V
V
30  
7
Volts  
Volts  
Volts  
mA  
CEO  
ECO  
CBO  
PIN 1. LED ANODE  
2. LED CATHODE  
3. N.C.  
70  
Collector Current — Continuous  
I
C
150  
150  
4. EMITTER  
5. COLLECTOR  
6. BASE  
Detector Power Dissipation @ T = 25°C  
with Negligible Power in Input LED  
Derate above 25°C  
P
D
mW  
A
1.76  
mW/°C  
TOTAL DEVICE  
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
Ambient Operating Temperature Range  
Storage Temperature Range  
T
–55 to +100  
–55 to +150  
260  
°C  
°C  
°C  
A
T
stg  
Soldering Temperature (10 sec, 1/16″ from case)  
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
4N25 4N26 4N27 4N28  
(1)  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
(1)  
Typ  
Characteristic  
INPUT LED  
Symbol  
Min  
Max  
Unit  
V
F
Forward Voltage (I = 10 mA)  
T
= 25°C  
= –55°C  
= 100°C  
—
—
—
1.15  
1.3  
1.05  
1.5  
—
—
Volts  
F
A
T
A
T
A
Reverse Leakage Current (V = 3 V)  
R
I
—
—
—
100  
µA  
R
Capacitance (V = 0 V, f = 1 MHz)  
C
18  
—
pF  
J
OUTPUT TRANSISTOR  
Collector–Emitter Dark Current  
4N25,26,27  
4N28  
I
—
—
1
1
50  
100  
nA  
CEO  
(V  
CE  
= 10 V, T = 25°C  
A
(V  
= 10 V, T = 100°C)  
All Devices  
I
I
—
—
30  
70  
7
1
0.2  
45  
100  
7.8  
500  
7
—
—
—
—
—
—
—
—
—
µA  
nA  
CE  
A
CEO  
Collector–Base Dark Current (V  
= 10 V)  
Collector–Emitter Breakdown Voltage (I = 1 mA)  
CB  
CBO  
V
V
V
Volts  
Volts  
Volts  
—
C
(BR)CEO  
(BR)CBO  
(BR)ECO  
Collector–Base Breakdown Voltage (I = 100 µA)  
C
Emitter–Collector Breakdown Voltage (I = 100 µA)  
E
DC Current Gain (I = 2 mA, V  
CE  
= 5 V)  
h
C
C
—
—
—
—
C
FE  
CE  
CB  
Collector–Emitter Capacitance (f = 1 MHz, V  
= 0)  
= 0)  
pF  
CE  
Collector–Base Capacitance (f = 1 MHz, V  
CB  
19  
9
pF  
Emitter–Base Capacitance (f = 1 MHz, V  
= 0)  
C
pF  
EB  
EB  
COUPLED  
(2)  
I (CTR)  
C
Output Collector Current (I = 10 mA, V  
CE  
= 10 V)  
mA (%)  
F
4N25,26  
4N27,28  
2 (20)  
1 (10)  
7 (70)  
5 (50)  
—
—
Collector–Emitter Saturation Voltage (I = 2 mA, I = 50 mA)  
V
CE(sat)  
—
—
0.15  
2.8  
4.5  
1.2  
1.3  
—
0.5  
—
—
—
—
—
—
—
Volts  
µs  
C
F
(3)  
Turn–On Time (I = 10 mA, V  
= 10 V, R = 100 Ω)  
t
F
CC  
L
on  
off  
(3)  
Turn–Off Time (I = 10 mA, V  
= 10 V, R = 100 Ω)  
t
—
µs  
F
CC  
L
(3)  
Rise Time (I = 10 mA, V  
CC  
= 10 V, R = 100 Ω)  
t
r
—
µs  
F
L
(3)  
Fall Time (I = 10 mA, V  
CC  
= 10 V, R = 100 Ω)  
t
f
—
µs  
F
L
(4)  
Isolation Voltage (f = 60 Hz, t = 1 sec)  
V
ISO  
R
ISO  
C
ISO  
7500  
Vac(pk)  
Ω
(4)  
11  
10  
Isolation Resistance (V = 500 V)  
Isolation Capacitance (V = 0 V, f = 1 MHz)  
—
(4)  
—
0.2  
pF  
1. Always design to the specified minimum/maximum electrical limits (where applicable).  
2. Current Transfer Ratio (CTR) = I /I x 100%.  
C F  
3. For test circuit setup and waveforms, refer to Figure 11.  
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
4N25 4N26 4N27 4N28  
TYPICAL CHARACTERISTICS  
2
10  
PULSE ONLY  
PULSE OR DC  
NORMALIZED TO:  
= 10 mA  
1.8  
I
F
1
1.6  
1.4  
1.2  
1
0.1  
T
= –55  
°
C
C
A
25°  
100°  
C
1
10  
100  
1000  
0.01  
0.5  
1
2
5
10  
20  
50  
I , LED FORWARD CURRENT (mA)  
I , LED INPUT CURRENT (mA)  
F
F
Figure 1. LED Forward Voltage versus Forward Current  
Figure 2. Output Current versus Input Current  
10  
28  
7
5
24  
I
= 10 mA  
5 mA  
F
NORMALIZED TO T = 25°C  
A
20  
16  
12  
8
2
1
0.7  
0.5  
2 mA  
1 mA  
0.2  
0.1  
4
0
0
1
2
3
4
5
6
7
8
9
10  
–60  
–40 –20  
0
20  
40  
60  
80  
100  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
T , AMBIENT TEMPERATURE (°C)  
CE  
A
Figure 3. Collector Current versus  
Figure 4. Output Current versus Ambient Temperature  
Collector–Emitter Voltage  
100  
50  
NORMALIZED TO:  
V
= 10 V  
CC  
V
T
= 10 V  
CE  
= 25°C  
100  
10  
A
20  
10  
5
t
f
R
= 1000  
L
{
V
= 30 V  
CE  
R
= 100  
L
{
t
r
1
t
f
2
1
t
10 V  
20  
r
0.1  
0
40  
60  
80  
100  
0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
100  
T , AMBIENT TEMPERATURE (  
°C)  
I , LED INPUT CURRENT (mA)  
A
F
Figure 5. Dark Current versus Ambient Temperature  
Figure 6. Rise and Fall Times  
(Typical Values)  
4N25 4N26 4N27 4N28  
100  
70  
50  
100  
70  
50  
V
= 10 V  
V
= 10 V  
CC  
CC  
R
= 1000  
L
20  
20  
10  
R
= 1000  
L
10  
7
100  
10  
7
5
100  
10  
5
2
1
2
1
0.1  
0.2  
0.5 0.7  
1
2
5
7
10  
20  
50 70 100  
0.1  
0.2  
0.5 0.7  
1
2
5
7
10  
20  
50 70100  
I , LED INPUT CURRENT (mA)  
I , LED INPUT CURRENT (mA)  
F
F
Figure 7. Turn–On Switching Times  
Figure 8. Turn–Off Switching Times  
(Typical Values)  
(Typical Values)  
20  
18  
4
I
= 7 µA  
I
= 0  
C
B
F
LED  
f = 1 MHz  
16  
6 µA  
C
3
2
1
CB  
14  
12  
5
µ
A
A
10  
8
4
µ
C
EB  
3
2
1
µA  
µA  
µA  
6
C
CE  
4
2
0
0.05 0.1  
0.2  
0.5  
1
2
5
10  
20  
50  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)  
V, VOLTAGE (VOLTS)  
CE  
Figure 9. DC Current Gain (Detector Only)  
Figure 10. Capacitances versus Voltage  
TEST CIRCUIT  
WAVEFORMS  
INPUT PULSE  
V
= 10 V  
CC  
I
= 10 mA  
INPUT  
F
R
= 100 Ω  
L
10%  
OUTPUT PULSE  
OUTPUT  
90%  
t
t
f
r
t
t
on  
off  
Figure 11. Switching Time Test Circuit and Waveforms  
4N25 4N26 4N27 4N28  
PACKAGE DIMENSIONS  
–A–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
6
4
3
–B–  
1
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
E
MIN  
MAX  
0.350  
0.260  
0.200  
0.020  
0.070  
0.014  
MIN  
8.13  
6.10  
2.93  
0.41  
1.02  
0.25  
MAX  
8.89  
6.60  
5.08  
0.50  
1.77  
0.36  
C
F 4 PL  
L
0.320  
0.240  
0.115  
0.016  
0.040  
0.010  
N
F
–T–  
SEATING  
PLANE  
K
G
J
K
L
M
N
0.100 BSC  
2.54 BSC  
0.008  
0.100  
0.012  
0.150  
0.21  
2.54  
0.30  
3.81  
J 6 PL  
G
0.300 BSC  
7.62 BSC  
M
M
M
0.13 (0.005)  
T
B
A
M
0
15  
0
15  
E 6 PL  
0.015  
0.100  
0.38  
2.54  
D 6 PL  
M
M
M
0.13 (0.005)  
T
A
B
STYLE 1:  
PIN 1. ANODE  
2. CATHODE  
3. NC  
4. EMITTER  
5. COLLECTOR  
6. BASE  
THRU HOLE  
–A–  
6
4
3
NOTES:  
–B–  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
1
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
E
MIN  
MAX  
0.350  
0.260  
0.200  
0.020  
0.070  
0.014  
MIN  
8.13  
6.10  
2.93  
0.41  
1.02  
0.25  
MAX  
8.89  
6.60  
5.08  
0.50  
1.77  
0.36  
L
F 4 PL  
0.320  
0.240  
0.115  
0.016  
0.040  
0.010  
H
C
F
–T–  
SEATING  
PLANE  
G
H
J
K
L
0.100 BSC  
2.54 BSC  
G
J
0.020  
0.008  
0.006  
0.320 BSC  
0.332  
0.025  
0.012  
0.035  
0.51  
0.20  
0.16  
8.13 BSC  
8.43  
0.63  
0.30  
0.88  
K 6 PL  
0.13 (0.005)  
M
E 6 PL  
M
M
M
T
B
A
D 6 PL  
S
0.390  
9.90  
M
M
0.13 (0.005)  
T
A
B
SURFACE MOUNT  
4N25 4N26 4N27 4N28  
NOTES:  
–A–  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
6
4
3
–B–  
INCHES  
MILLIMETERS  
1
DIM  
A
B
C
D
E
MIN  
MAX  
0.350  
0.260  
0.200  
0.020  
0.070  
0.014  
MIN  
8.13  
6.10  
2.93  
0.41  
1.02  
0.25  
MAX  
8.89  
6.60  
5.08  
0.50  
1.77  
0.36  
0.320  
0.240  
0.115  
0.016  
0.040  
0.010  
L
N
F 4 PL  
F
C
G
J
K
L
0.100 BSC  
2.54 BSC  
0.008  
0.100  
0.400  
0.015  
0.012  
0.150  
0.425  
0.040  
0.21  
2.54  
0.30  
3.81  
–T–  
SEATING  
PLANE  
10.16  
0.38  
10.80  
1.02  
N
G
J
K
D 6 PL  
0.13 (0.005)  
E 6 PL  
M
M
M
T
A
B
0.4" LEAD SPACING  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, and (c) whose failure to  
perform when properly used in accordance with  
instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the  
user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
www.fairchildsemi.com  
© 2000 Fairchild Semiconductor Corporation  
厂商 型号 描述 页数 下载

APITECH

 		4N200W-03F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-10 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-20 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-30M [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40 [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40F [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

APITECH

 		4N200W-40M [ Fixed Attenuator, 0MHz Min, 4000MHz Max, ROHS COMPLIANT PACKAGE ] 1 页

MII

 		4N22 JAN ， JANTX ， JANTXV ，单通道光耦合器[ JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS ] 4 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.189053s