IXBK75N170A
IXBX75N170A
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-264 AA ( IXBK) Outline
Min.
Typ.
Max.
gfS
IC = 42A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
28
48
S
Cies
Coes
Cres
7200
450
pF
pF
pF
150
Qg
358
46
nC
nC
nC
Qge
Qgc
IC = 42A, VGE = 15V, VCE = 0.5 • VCES
148
td(on)
tri
td(off)
tfi
26
40
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
IC = 42A, VGE = 15V
418
60
A
A1
A2
b
b1
b2
c
D
E
e
J
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
VCE = 0.8 • VCES, RG = 1Ω
Note 2
110
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Eoff
3.80
7.00
td(on)
tri
td(off)
tfi
27
38
ns
ns
ns
ns
mJ
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Inductive load, TJ = 125°C
25.91 26.16
19.81 19.96
5.46 BSC
IC = 42A, VGE = 15V
420
175
6.35
.215 BSC
0.00
0.00
0.25
0.25
.000
.000
.010
.010
VCE = 0.8 • VCES, RG = 1Ω
Note 2
K
L
L1
Eoff
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
Q
Q1
R
3.17
6.07
8.38
3.81
1.78
3.66
6.27
8.69
4.32
2.29
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
RthJC
RthCS
0.12 °C/W
°C/W
0.15
R1
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
PLUS 247TM (IXBX) Outline
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max
VF
IF = 42A, VGE = 0V, Note 1
4.2
V
trr
IRM
QRM
360
19
3.5
ns
A
μC
IF = 42A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Notes:
1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Additional provisions for lead-to-lead isolation are required at VCE >1200V.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
ADVANCE TECHNICAL INFORMATION
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
